Barraza-Lopez, S, Kindermann M, Chou MY.
2012.
Charge Transport through Graphene Junctions with Wetting Metal Leads, Jul. Nano Letters. 12:3424-3430., Number 7
AbstractGraphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and extraction processes. We have performed transport calculations for graphene junctions with wetting metal leads (metal leads that bind covalently to graphene) using nonequilibrium Green's functions and density functional theory. Quantitative information is provided on the increased resistance with respect to ideal contacts and on the statistics of current fluctuations. We find that charge transport through the studied two-terminal graphene junction with Ti contacts is pseudo-diffusive up to surprisingly high energies.
Wang, ZF, Liu F, Chou MY.
2012.
Fractal Landau-Level Spectra in Twisted Bilayer Graphene, Jul. Nano Letters. 12:3833-3838., Number 7
AbstractThe Hofstadter butterfly spectrum for Landau levels in a two-dimensional periodic lattice is a rare example exhibiting fractal properties in a truly quantum system. However, the observation of this physical phenomenon in a conventional material will require a magnetic field strength several orders of magnitude larger than what can be produced in a modern laboratory. It turns out that for a specific range of rotational angles twisted bilayer graphene serves as a special system with a fractal energy spectrum under laboratory accessible magnetic field strengths. This unique feature arises from an intriguing electronic structure induced by the interlayer coupling. Using a recursive tight-binding method, we systematically map out the spectra of these Landau levels as a function of the rotational angle. Our results give a complete description of LLs in twisted bilayer graphene for both commensurate and incommensurate rotational angles and provide quantitative predictions of magnetic field strengths for observing the fractal spectra in these graphene systems.
Yan, JA, Varga K, Chou MY.
2012.
Optical phonon anomaly in Bernal stacked bilayer graphene with ultrahigh carrier densities, Jul. Physical Review B. 86:5., Number 3
AbstractElectron-phonon coupling (EPC) in Bernal stacked bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric and antisymmetric optical modes. Both are shown to have distinct EPC-induced phonon linewidths and frequency shifts as a function of the Fermi level E-F. We find that the antisymmetric mode has a strong coupling with the lowest two conduction bands when the Fermi level E-F is nearly 0.5 eV above the neutrality point, giving rise to a giant linewidth (more than 100 cm(-1)) and a significant frequency softening (similar to 60 cm(-1)). Our ab initio calculations show that the origin of the dramatic change arises from the unusual band structure in BLG. The results highlight the band structure effects on the EPC in BLG in the high-carrier-density regime.
Sun, YY, Ruan WY, Gao XF, Bang J, Kim YH, Lee K, West D, Liu X, Chan TL, Chou MY, Zhang SB.
2012.
Phase diagram of graphene nanoribbons and band-gap bifurcation of Dirac fermions under quantum confinement, May. Physical Review B. 85:5., Number 19
AbstractA p-T phase diagram of graphene nanoribbons (GNRs) terminated by hydrogen atoms is established based on first-principles calculations, where the stable phase at standard conditions (25 degrees C and 1 bar) is found to be a zigzag GNR (zzGNR). The stability of this new GNR is understood based on an electron-counting model, which predicts semiconducting nonmagnetic zzGNRs. Quantum confinement of Dirac fermions in the stable zzGNRs is found to be qualitatively different from that in ordinary semiconductors. Bifurcation of the band gap is predicted to take place, leading to the formation of polymorphs with distinct band gaps but equal thermodynamic stability. A tight-binding model analysis reveals the role of edge symmetry on the band-gap bifurcation.
Xian, LD, Chou MY.
2012.
Diffusion of Si and C atoms on and between graphene layers, Nov. Journal of Physics D-Applied Physics. 45:6., Number 45
AbstractThe growth of epitaxial graphene on SiC surfaces is accompanied by the evaporation of Si atoms during the growth process. The continuous loss of Si atoms takes place even after the surface graphene layers are formed. Understanding the atomic transport process involved is critical in establishing a growth mechanism to model and control the process. Using density functional theory, we have calculated the potential energy variation and studied the diffusion of Si and C atoms on a single layer of graphene and between graphene sheets. Our results show that Si atoms can move almost freely on graphene and between graphene layers, while C atoms have much larger diffusion barriers. This work provides a detailed description of the energetics of relevant processes in the growth of epitaxial graphene on SiC surfaces.
Hsing, CR, Wei CM, Chou MY.
2012.
Quantum Monte Carlo investigations of adsorption energetics on graphene, Oct. Journal of Physics-Condensed Matter. 24:7., Number 39
AbstractWe have performed calculations of adsorption energetics on the graphene surface using the state-of-the-art diffusion quantum Monte Carlo method. Two types of configurations are considered in this work: the adsorption of a single O, F, or H atom on the graphene surface and the H-saturated graphene system (graphane). The adsorption energies are compared with those obtained from density functional theory with various exchange-correlation functionals. The results indicate that the approximate exchange-correlation functionals significantly overestimate the binding of O and F atoms on graphene, although the preferred adsorption sites are consistent. The energy errors are much less for atomic hydrogen adsorbed on the surface. We also find that a single O or H atom on graphene has a higher energy than in the molecular state, while the adsorption of a single F atom is preferred over the gas phase. In addition, the energetics of graphane is reported. The calculated equilibrium lattice constant turns out to be larger than that of graphene, at variance with a recent experimental suggestion.
Zhang, F, Wang Y, Chou MY.
2012.
Hydrogen Interaction with the Al Surface Promoted by Subsurface Alloying with Transition Metals, Sep. Journal of Physical Chemistry C. 116:18663-18668., Number 35
AbstractDissociative chemisorption of H-2 on the Al surface is a crucial step in the regeneration of promising hydrogen-storage materials such as alane and alanates. We show from first-principles calculations that transition metals such as V and Nb can act as effective catalysts for H-2 interaction with Al(100). When located at subsurface sites, V and Nb can reduce the activation barrier for H-2 dissociation by significantly larger values than the well-studied catalyst Ti. In addition, the binding energy of a H atom on the surface can be enhanced by as much as 0.4 eV when V or Nb is introduced in the sublayers of Al(100). The diffusion barrier for the adsorbed hydrogen is reduced by similar to 0.1 eV, showing an increased hydrogen mobility. The mechanism of promoting the metal surface reactivity by subsurface alloying with transition metals proposed in this work may serve as a new possible scheme for catalytic reactions on the metal surface.