Publications

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2023
Holbrook, M, Chen Y, Kim H, Frammolino L, Liu M, Pan C-R, Chou M-Y, Zhang C, Shih C-K.  2023.  Creating a Nanoscale Lateral Junction in a Semiconductor Monolayer with a Large Built-in Potential. ACS NANO. 17:6966-6972. AbstractWebsite

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2022
Hlevyack, JA, Chan Y-H, Lin M-K, He T, Peng W-H, Royal EC, Chou M-Y, Chiang T-C.  2022.  Emergence of topological and trivial interface states in VSe2 films coupled to Bi2Se3, May. Phys. Rev. B. 105:195119.: American Physical Society AbstractWebsite

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Chen, F-W, Lue N-Y, Chou M-Y, Wu Y-SG.  2022.  All-electrical valley filtering in graphene systems. I. A path to integrated electro-valleytronics, 10. Journal of Applied Physics. 132, Number 16 AbstractWebsite

{Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: (i) all electrical gate control, (ii) electrically switchable valley polarity, (iii) robustness against configuration fluctuation, and (iv) potential for room temperature operation. This valley filtering is accomplished by a combination of gap opening in either bilayer graphene with a vertical electrical field or single layer graphene on h-BN, valley splitting with a horizontal electric field, and intervalley mixing by defect scattering. In addition to functioning as a building block for valleytronics, the proposed configuration makes it possible to convert signals between electrical and valleytronic forms, thus allowing for the integration of electronic and valleytronic components for the realization of electro-valleytronics.}

Chen, P, Chan Y-H, Liu R-Y, Zhang H-T, Gao Q, Fedorov A-V, Chou M-Y, Chiang T-C.  2022.  Dimensional crossover and symmetry transformation of charge density waves in VSe2. Phys. Rev. B. 105:161404. AbstractWebsite

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Hlevyack, JA, Chan Y-H, Lin M-K, He T, Peng W-H, Royal EC, Chou M-Y, Chiang T-C.  2022.  Emergence of topological and trivial interface states in VSe2 films coupled to Bi2Se3. Phys. Rev. B. 105:195119. AbstractWebsite

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Hsu, W-T, Quan J, Pan C-R, Chen P-J, Chou M-Y, Chang W-H, MacDonald AH, Li X, Lin J-F, Shih C-K*.  2022.  Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2. Phys. Rev. B. 106:125302. AbstractWebsite

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2021
Wang, J, Zhuo K, Gao J, Landman U, Chou M-Y.  2021.  Mechanism for anisotropic diffusion of liquid-like Cu atoms in hexagonal beta-Cu2S, Jul. Phys. Rev. Materials. 5:073603.: American Physical Society AbstractWebsite

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Lin, M-K, He T, Hlevyack JA, Chen P, Mo S-K, Chou M-Y, Chiang T-C.  2021.  Coherent Electronic Band Structure of TiTe2/TiSe2 Moiré Bilayer. ACS Nano. 15:3359-3364., Number 2 AbstractWebsite
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Siao, M-D, Lin Y-C, He T, Tsai M-Y, Lee K-Y, Chang S-Y, Lin K-I, Lin Y-F, Chou M-Y, Suenaga K, Chiu P-W.  2021.  Embedment of Multiple Transition Metal Impurities into WS2 Monolayer for Bandstructure Modulation. Small. 17:2007171., Number 17 AbstractWebsite

Abstract Band structure by design in 2D layered semiconductors is highly desirable, with the goal to acquire the electronic properties of interest through the engineering of chemical composition, structure, defect, stacking, or doping. For atomically thin transition metal dichalcogenides, substitutional doping with more than one single type of transition metals is the task for which no feasible approach is proposed. Here, the growth of WS2 monolayer is shown codoped with multiple kinds of transition metal impurities via chemical vapor deposition controlled in a diffusion-limited mode. Multielement embedment of Cr, Fe, Nb, and Mo into the host lattice is exemplified. Abundant impurity states thus generate in the bandgap of the resultant WS2 and provide a robust switch of charging/discharging states upon sweep of an electric filed. A profound memory window exists in the transfer curves of doped WS2 field-effect transistors, forming the basis of binary states for robust nonvolatile memory. The doping technique presented in this work brings one step closer to the rational design of 2D semiconductors with desired electronic properties.

Zhang, H, Holbrook M, Cheng F, Nam H, Liu M, Pan C-R, West D, Zhang S, Chou M-Y, Shih C-K.  2021.  Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO. ACS Nano. 15:2497-2505., Number 2 AbstractWebsite
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2020
Pan, C-R, Lee W, Shih C-K, Chou MY.  2020.  Coherently coupled quantum-well states in bimetallic Pb/Ag thin films, Sep. Phys. Rev. B. 102:115428.: American Physical Society AbstractWebsite
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Zhuo, K, Wang J, Gao J, Landman U, Chou M-Y.  2020.  Liquidlike Cu atom diffusion in weakly ionic compounds Cu2S and Cu2Se, Aug. Phys. Rev. B. 102:064201.: American Physical Society AbstractWebsite

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Lee, W, Pan C-R, Nam H, Chou M-Y, Shih C-K.  2020.  Critical role of parallel momentum in quantum well state couplings in multi-stacked nanofilms: An angle resolved photoemission study, 2020. AIP AdvancesAIP Advances. 10(12):125211.: American Institute of Physics AbstractWebsite
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2019
Nguyen, D-L, Wei C-M, Chou M-Y.  2019.  Theoretical study of quantum size effects in thin Al(100), Al(110), and Al(111) films, May. Phys. Rev. B. 99:205401.: American Physical Society AbstractWebsite
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Chu, C-H, Lin H-C, Yeh C-H, Liang Z-Y, Chou M-Y, Chiu P-W.  2019.  End-Bonded Metal Contacts on WSe2 Field-Effect Transistors. ACS Nano. 13:8146-8154., Number 7 AbstractWebsite
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Wong, DP, Aminzare M, Chou T-L, Pang C-S, Liu Y-ren, Shen T-H, Chang BK, Lien H-T, Chang S-T, Chien C-H, Chen Y-Y, Chu M-W, Yang Y-W, Hsieh W-P, Rogl G, Rogl P, Kakefuda Y, Mori T, Chou M-Y, Chen L-C, Chen K-H.  2019.  Origin of Band Modulation in GeTe-Rich Ge–Sb–Te Thin Film. ACS Applied Electronic Materials. 1:2619-2625., Number 12 AbstractWebsite
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Wei, P-C, Bhattacharya S, Liu Y-F, Liu F, He J, Tung Y-H, Yang C-C, Hsing C-R, Nguyen D-L, Wei C-M, Chou M-Y, Lai Y-C, Hung T-L, Guan S-Y, Chang C-S, Wu H-J, Lee C-H, Li W-H, Hermann RP, Chen Y-Y, Rao AM.  2019.  Thermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe. ACS Omega. 4:5442-5450., Number 3 AbstractWebsite
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Yeh, C-H, Chen H-C, Lin H-C, Lin Y-C, Liang Z-Y, Chou M-Y, Suenaga K, Chiu P-W.  2019.  Ultrafast Monolayer In/Gr-WS2-Gr Hybrid Photodetectors with High Gain. ACS Nano. 13:3269-3279., Number 3 AbstractWebsite
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2018
Chen, P, Pai WW, Chan Y-H, Madhavan V, Chou MY, Mo S-K, Fedorov A-V, Chiang T-C.  2018.  Unique Gap Structure and Symmetry of the Charge Density Wave in Single-Layer VSe2, Nov. Phys. Rev. Lett.. 121:196402.: American Physical Society AbstractWebsite

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Hsieh, T-C, Chou M-Y, Wu Y-S.  2018.  Electrical valley filtering in transition metal dichalcogenides, Mar. Phys. Rev. Materials. 2:034003.: American Physical Society AbstractWebsite
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Xu, C-Z, Chan Y-H, Chen P, Wang X, Flötotto D, Hlevyack JA, Bian G, Mo S-K, Chou M-Y, Chiang T-C.  2018.  Gapped electronic structure of epitaxial stanene on InSb(111), Jan. Phys. Rev. B. 97:035122.: American Physical Society AbstractWebsite
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Flötotto, D, Bai Y, Chan Y-H, Chen P, Wang X, Rossi P, Xu C-Z, Zhang C, Hlevyack JA, Denlinger JD, Hong H, Chou M-Y, Mittemeijer EJ, Eckstein JN, Chiang T-C.  2018.  In Situ Strain Tuning of the Dirac Surface States in Bi2Se3 Films, 2018. Nano LettersNano Letters. 18(9):5628-5632.: American Chemical Society AbstractWebsite
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Chen, P, Pai WW, Chan Y-H, Sun W-L, Xu C-Z, Lin D-S, Chou MY, Fedorov A-V, Chiang T-C.  2018.  Large quantum-spin-Hall gap in single-layer 1T′ WSe2, 2018. 9(1):2003. AbstractWebsite

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T′ structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T′ layer and an in-gap edge state located near the layer boundary. The system′s 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator–semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.

Lin, K-S, Chou M-Y.  2018.  Topological Properties of Gapped Graphene Nanoribbons with Spatial Symmetries, 2018. Nano LettersNano Letters. 18(11):7254-7260.: American Chemical Society AbstractWebsite
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Zhang, Q, Yu J, Ebert P, Zhang C, Pan C-R, Chou M-Y, Shih C-K, Zeng C, Yuan S.  2018.  Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns, 2018. ACS NanoACS Nano. 12(9):9355-9362.: American Chemical Society AbstractWebsite
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