Quantum Theory of Advanced Materials

Two-dimensional materials constitute a promising platform for developing nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe2 from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscopy and scanning tunneling microscopy and spectroscopy, we observed the emergence of a (2 × 2) charge density wave order in single-layer TiTe2 with a transition temperature of 92 ± 3 K. Also observed was a pseudogap of about 28 meV at the Fermi level at 4.2 K. Surprisingly, no charge density wave transitions were observed in two-layer and multi-layer TiTe2, despite the quasi-two-dimensional nature of the material in the bulk. The unique charge density wave phenomenon in the single layer raises intriguing questions that challenge the prevailing thinking about the mechanisms of charge density wave formation.

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Here{,} by utilizing the special interaction between metal Cu and multi-walled carbon nanotubes (CNTs){,} we have successfully realized the in situ growth of Cu2Se on the surface of CNTs and then fabricated a series of Cu2Se/CNT hybrid materials. Due to the high degree of homogeneously dispersed molecular CNTs inside the Cu2Se matrix{,} a record-high thermoelectric figure of merit zT of 2.4 at 1000 K has been achieved.

The low-lying energy spectra of bilayer graphene in a perpendicular magnetic field B(r)(z) over cap were obtained by numerical diagonalization of the Hamiltonian. We assumed that B(r) takes on the shape of a circular dot or a ring. Under such a nonuniform field, the lowest-energy Landau levels, with N- = 0,1, remain invariant with a zero eigenvalue. For other Landau levels, complicated level-splitting and level-crossings take place when the effective radius of the dot or ring increases. (C) 2012 Elsevier Ltd. All rights reserved.

Various surface passivations for silicon nanowires have previously been investigated to extend their stability and utility. However, the fundamental mechanisms by which such passivations alter the electronic properties of silicon nanowires have not been clearly understood thus far. In this work, we address this issue through first-principles calculations on fluorine, methyl and hydrogen passivated [110] and [111] silicon nanowires. Comparing these results, we explain how passivations may alter the electronic structure through quantum confinement and strain and demonstrate how silicon nanowires may be modelled by an infinite circular quantum well. We also discuss why [110] nanowires are more strongly influenced by their surface passivation than [111] nanowires.