Quantum Theory of Advanced Materials

A model interaction is introduced for quantum many-body simulations of Coulomb systems using periodic I boundary conditions. The interaction gives much smaller finite size effects than the standard Ewald interaction and is also much faster to compute. Variational quantum Monte Carlo simulations of diamond-structure silicon with up to 1000 electrons demonstrate the effectiveness of our method.

Abstract Band structure by design in 2D layered semiconductors is highly desirable, with the goal to acquire the electronic properties of interest through the engineering of chemical composition, structure, defect, stacking, or doping. For atomically thin transition metal dichalcogenides, substitutional doping with more than one single type of transition metals is the task for which no feasible approach is proposed. Here, the growth of WS2 monolayer is shown codoped with multiple kinds of transition metal impurities via chemical vapor deposition controlled in a diffusion-limited mode. Multielement embedment of Cr, Fe, Nb, and Mo into the host lattice is exemplified. Abundant impurity states thus generate in the bandgap of the resultant WS2 and provide a robust switch of charging/discharging states upon sweep of an electric filed. A profound memory window exists in the transfer curves of doped WS2 field-effect transistors, forming the basis of binary states for robust nonvolatile memory. The doping technique presented in this work brings one step closer to the rational design of 2D semiconductors with desired electronic properties.

Two-dimensional materials constitute a promising platform for developing nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe2 from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscopy and scanning tunneling microscopy and spectroscopy, we observed the emergence of a (2 × 2) charge density wave order in single-layer TiTe2 with a transition temperature of 92 ± 3 K. Also observed was a pseudogap of about 28 meV at the Fermi level at 4.2 K. Surprisingly, no charge density wave transitions were observed in two-layer and multi-layer TiTe2, despite the quasi-two-dimensional nature of the material in the bulk. The unique charge density wave phenomenon in the single layer raises intriguing questions that challenge the prevailing thinking about the mechanisms of charge density wave formation.

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The cubic YH2+x system with an extended hydrogen composition is studied using the pseudopotential method and the local-density-functional approximation with a plane-wave basis. The study focuses on the beta phase with the metal atoms forming a face-centered-cubic lattice and the octahedral sites partially occupied by hydrogen for 0 < x < 1. The self-consistent total-energy calculation is performed by employing the supercell modeling method. The structural property, in particular, the volume contraction with increasing x, is investigated by analyzing the energy changes for different site occupation. It is found that the lattice contracts mainly to increase the interaction of the additional electron and the metal d potential. In addition, the (420)-plane ordering of the x-excess hydrogen is examined for YH2.25 and is confirmed by energetics studies.

Using tight-binding models, the energies of a number of silicon and germanium (111) surfaces are studied. These include reconstructed surfaces with dimers and stacking faults (DS), simple adatom surfaces such as 2x2 and c(2x8), and more complicated cases with dimers, adatoms, and stacking faults (DAS). For reconstructed surfaces containing adatoms, it is found that a simple correction term dependent on the adatom concentration is needed in the present total-energy model to account for the unusual geometry. Similarities between the silicon and germanium reconstructions are seen and compare well with ab initio results. There are also some differences between silicon and germanium, for example, the DS surfaces are lower in energy than the relaxed (1x1) for silicon, but higher for germanium. Si(111) reconstructs into the DAS structure while Ge(111) goes to the simple adatom c(2x8) surface. The c(2x8), 7x7 DAS, (1x1), and 7x7 DS surface reconstructions of Ge(111) were studied with in-plane strain. For these surfaces, a strain of about 2% was sufficient to make the 7x7 DAS/DS surface lower in energy than the c(2x8)/(1x1) surface. An analysis of the energy per atom showed that the dimer-row and associated first-layer atoms played a major part in the differing energy behavior, in agreement with an earlier proposal. An expansive strain was applied to the 2x2, 7x7 DAS, (1x1), and 7x7 DS surface reconstructions of Si(111). With a strain of about 2.5% the adatom surfaces switched relative energies, while the adatom free surfaces required only about 1.5% strain. As for germanium, the dimer-row and associated atoms were of major importance in the differing energy change.

In this paper, we study the low-lying energy spectra of a two-dimensional (2D) graphene-based magnetic dot in a perpendicular and radially inhomogeneous magnetic field with the use of the massless Dirac-Weyl equation. Numerical calculations are performed using 2D harmonic basis states for direct diagonalization. Effects of both the dot size and the magnetic field on the low-lying energy spectra are discussed.

We present a first-principles study of the correlated electron-hole states in a silicon nanowire of a diameter of 1.2 nm and their influence on the optical absorption spectrum. The quasiparticle states are calculated employing a many-body Green's function approach within the GW approximation to the electron self-energy, and the effects of the electron-hole interaction to optical excitations are evaluated by solving the Bethe-Salpeter equation. The enhanced Coulomb interaction in this confined geometry results in an unusually large binding energy (1-1.5 eV) for the excitons, which dominate the optical absorption spectrum.

The surface states of ABC-stacked few-layer graphene ( FLG) are studied based on density-functional theory. These states form flat bands near the Fermi level, with the k-space range increasing with the layer number. Based on a tight-binding model, the characteristics of these surface states and their evolution with respect to the number of layers are examined. The infrared optical conductivity is then calculated within the single-particle excitation picture. We show that the surface states introduce unique peaks at around 0.3 eV in the optical conductivity spectra of ABC-stacked FLG when the polarization is parallel to the sheets, in good agreement with recent experimental measurement. Furthermore, as the layer number increases, the absorption amplitude is greatly enhanced and the peak position redshifts, which provides a feasible way to identify the number of layers for ABC-stacked FLG using optical conductivity measurements.

A combination of the coupling constant integration technique and the quantum Monte Carlo method is used to investigate the most relevant quantities in Kohn-Sham density-functional theory. Variational quantum Monte Carlo is used to construct realistic many-body wave functions for diamond-structure silicon at different values of the Coulomb coupling constant. The exchange-correlation energy density along with the coupling constant dependence and the coupling-constant-integrated form of the pair-correlation function, the exchange-correlation hole, and the exchange-correlation energy are presented. Comparisons of these functions an mode with results obtained from the local-density approximation, the average density approximation, the weighted density approximation, and the generalized gradient approximation. We discuss reasons for the success of the local-density approximation. The insights provided by this approach will make it possible to carry out stringent tests of the effectiveness of exchange-correlation functionals and in the long term aid in the search for better functionals. [S0163-1829(98)02115-8].

We have studied the pair-correlation function, the exchange-correlation hole, and the exchange-correlation energy density of the valence electrons in the Si atom using the Coulomb-coupling constant integration technique with the variational quantum Monte Carlo method. These quantities are compared to those derived from various approximate models within the Kohn-Sham density functional theory. We find that the charge density prefactor in the expression for the exchange-correlation hole dominates the errors found in the local spin density approximation (LSDA), that the generalized gradient approximation improves energy calculations by improving the LSDA at long ranges, and that the weighted spin density approximation, which uses the correct charge density prefactor, gives the lowest root mean square error for the exchange-correlation energy density.

We have used the combination of the coupling-constant integration procedure and the variational quantum Monte Carlo method to study the exchange-correlation (XC) interaction in small molecules: Si-2, C2H2, C2H4, and C2H6. In this paper we report the calculated XC energy density, a central quantity in density functional theory, as deduced from the interaction between the electron and its XC hole integrated over the interaction strength. Comparing these "exact" XC energy densities with results using the local-density approximation (LDA), one can analyze the errors in this widely used approximation. Since the XC energy is an integrated quantity, error cancellation among the XC energy density in different regions is possible. Indeed we find a general error cancellation between the high-density and low-density regions. Moreover, the error distribution of the exchange contribution is out of phase with the error distribution of the correlation contribution. Similar to what is found for bulk silicon and an isolated silicon atom, the spatial variation of the errors of the LDA XC energy density in these molecules largely follows the sign and shape of the Laplacian of the electron density. Some noticeable deviations are found in Si-2 in which the Laplacian peaks between the atoms, while the LDA error peaks in the regions "behind" atoms where a good portion of the charge density originates from an occupied 1 sigma(u) antibonding orbital. Our results indicate that, although the functional form could be quite complex, an XC energy functional containing the Laplacian of the energy is a promising possibility for improving LDA.

One third of a monolayer of Sn adsorbed on Ge(111) undergoes a broad phase transition upon cooling from a (root3 x root3)R30degrees normal phase at room temperature to a (3 x 3) phase at low temperatures. Since band-structure calculations for the ideal (root3 x root3)R30degrees phase show no Fermi-surface nesting, the underlying mechanism for this transition has been a subject of much debate. Evidently, defects formed by Ge substitution for Sn in the adlayer, at a concentration of just a few percent, play a key role in this complex phase transition. Surface areas near these defects are pinned to form (3 x 3) patches above the transition temperature. Angle-resolved photoemission is employed to examine the temperature-dependent band structure, and the results show an extended gap forming in k-space as a result of band splitting at low temperatures. On account of the fact that the room temperature phase is actually a mixture of (root3 x root3)R30degrees areas and defect-pinned (3 x 3) areas, the band structure for the pure (root3 x root3)R30degrees phase is extracted by a difference-spectrum method. The results are in excellent agreement with band calculations. The mechanism for the (3 x 3) transition is discussed in terms of a response function and a tight-binding cluster calculation. A narrow bandwidth and a small group velocity near the Fermi surface render the system highly sensitive to surface perturbations, and formation of the (3 x 3) phase is shown to involve a Peierls-like lattice distortion mediated by defect doping. Included in the discussion, where appropriate, are dynamic effects and many-body effects that have been previously proposed as possible mechanisms for the phase transition.

We propose a simple method to evaluate the energies of ideal metal surfaces as a function of orientation based on cluster energy expansion. By symmetry only clusters with even-number corners will be present. It is found that the energy expansion converges rapidly and in most cases can be truncated at the pair interaction level. The parameters can be determined from a limited number of low-index surface energies obtained from first-principles calculations. The equilibrium crystal shape at T = O is then predicted and the step energy on major facets is derived for some fee metals.

We present a first-principles investigation to study the possible alloy phases of sodium and lithium alanates. Structural and energetics properties of alloy systems Na(1-x)Li(x)AlH(4) and Na(3(1-x))Li(3x)AlH(6) are studied via phase interpolation. Alloy system Na(1-x)Li(x)AlH(4) is found to have a small mixing energy (<5 kj/mol). The equilibrium structure undergoes a transition from a tetragonal structure to a monoclinic structure between x = 0.25 and 0.5. Within each structure the cell volume decreases with increasing x, which can be explained by Li having a smaller ion size than Na. Alloy system Na(3(1-x))Li(3x)AlH(6) is also studied, and one intermediate composition Na(2)LiAlH(6) is found to be stable in agreement with experimental findings. (C) 2009 Elsevier B.V. All rights reserved.

Quasiparticle band structures for the cubic trihydrides YH3 and LaH3 have been calculated by evaluating the self-energy in the GW approximation using ab initio pseudopotentials and plane waves. These are the prototype metal hydrides that exhibit switchable optical properties. For both materials, the local-density approximation (LDA) yields semimetallic energy bands with a direct overlap of about 1 eV. We find the self-energy correction to the LDA energies opens a gap at Gamma of 0.8-0.9 eV for LaH3 and 0.2-0.3 eV for YH3, where the latter is in sharp contrast to a previous study using linear-muffin-tin orbitals. The quasiparticle band gaps are analyzed as a function of an initial shift in the LDA bands used to evaluate the random-phase approximation screening in constructing the self-energy. We also make a comparison of results obtained by using two different pseudopotentials, each designed to better approximate exchange and correlation between the semicore states and valence states of Y and La.

Recently it was discovered that a total of 5.6 wt. % H-2 could be released from the 1:2 mixture of lithium amide and magnesium hydride at temperatures as low as 150 degrees C. With a reaction enthalpy of 44 KJ/mol H-2, this system has high potential for on-board hydrogen storage applications. The fully desorbed product is believed to be a mixed lithium and magnesium imide Li2Mg(NH)(2). In this work, the crystal structure of this mixed imide is studied from total-energy density-functional calculations. Based on a recent experimentally established space group, possible ordered configurations are examined. Important local orderings are identified for the experimentally observed disordered phase at room temperature. These unique local arrangements are also connected with the observed structural transitions above room temperature. In addition, the local ordering in Mg(NH2)(2) is analyzed. The similarity and difference of local arrangements among hydrogen, cations, and vacancies are discussed for the three amide (imide) systems: LiNH2, Mg(NH2)(2), and Li2Mg(NH)(2). The identification of the cation and hydrogen local orderings are expected to facilitate the design of new mixed imides and amides as hydrogen storage materials with desired physical properties.