Enhanced electron-hole interaction and optical absorption in a silicon nanowire

Citation:
Yang, L, Spataru CD, Louie SG, Chou MY.  2007.  Enhanced electron-hole interaction and optical absorption in a silicon nanowire, May. Physical Review B. 75:4., Number 20

Abstract:

We present a first-principles study of the correlated electron-hole states in a silicon nanowire of a diameter of 1.2 nm and their influence on the optical absorption spectrum. The quasiparticle states are calculated employing a many-body Green's function approach within the GW approximation to the electron self-energy, and the effects of the electron-hole interaction to optical excitations are evaluated by solving the Bethe-Salpeter equation. The enhanced Coulomb interaction in this confined geometry results in an unusually large binding energy (1-1.5 eV) for the excitons, which dominate the optical absorption spectrum.

Notes:

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