Publications

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1998
Hong, S, Chou MY.  1998.  Effect of hydrogen on the surface-energy anisotropy of diamond and silicon, Mar. Physical Review B. 57:6262-6265., Number 11 AbstractWebsite

We have evaluated the surface free energies of hydrogen-covered (100), (111), and (110) surfaces of diamond and silicon as a function of the hydrogen chemical potential using first-principles methods. The change in surface-energy anisotropy and equilibrium crystal shape due to hydrogen adsorption is examined. The three low-index facets are affected differently by the presence of hydrogen and unexpected differences are found between diamond and silicon. Taking into account possible formation of local facets on the hydrogen-covered (100) surfaces, we find that the dihydride phase is not stable on both C(100) and Si(100). nor is the 3x1 phase on C(100).

Hood, RQ, Chou MY, Williamson AJ, Rajagopal G, Needs RJ.  1998.  Exchange and correlation in silicon, Apr. Physical Review B. 57:8972-8982., Number 15 AbstractWebsite

A combination of the coupling constant integration technique and the quantum Monte Carlo method is used to investigate the most relevant quantities in Kohn-Sham density-functional theory. Variational quantum Monte Carlo is used to construct realistic many-body wave functions for diamond-structure silicon at different values of the Coulomb coupling constant. The exchange-correlation energy density along with the coupling constant dependence and the coupling-constant-integrated form of the pair-correlation function, the exchange-correlation hole, and the exchange-correlation energy are presented. Comparisons of these functions an mode with results obtained from the local-density approximation, the average density approximation, the weighted density approximation, and the generalized gradient approximation. We discuss reasons for the success of the local-density approximation. The insights provided by this approach will make it possible to carry out stringent tests of the effectiveness of exchange-correlation functionals and in the long term aid in the search for better functionals. [S0163-1829(98)02115-8].

Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline silicon carbon nitride: a wide band gap semiconductor. Appl. Phys. Lett.. 72:2463-2465.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Bhusari, DM, Yang JR, Wang TY, Chen KH, Lin ST, Chen LC.  1998.  Effect of Substrate Pretreatment and Methane Fraction on the Optical Transparency of Nano-crystalline Diamond Thin Films. J. Mater. Res.. 13:1769.
Pong, WF, Chang YK, Hsieh HH, Tsai MH, Lee KH, Dann TE, Chien FZ, Tseng PK, Tsang KL, Su WK, Chen LC, Wei SL, Chen KH, Bhusari DM, Chen YF.  1998.  Electronic and Atomic Structures of Si-C-N Thin Film by X-ray-absorption Spectroscopy. J. Electron Spectroscopy and Related Pheno.. 92:115.
Chang, YK, Hsieh HH, Pong WF, Tsai MH, Lee KH, Dann TE, Chien FZ, Tseng PK, Tsang KL, Su WK, Chen LC, Wei SL, Chen KH, Bhusari DM, Chen YF.  1998.  Electronic and Atomic Structures of SiCN Thin Film by X-ray Absorption Spectroscopy and Theoretical Calculations. Phys. Rev.. B58:9018.
Bhusari, DM, Chen KH, Yang TR, Lin ST, Wang TY, Chen LC.  1998.  Highly transparent nano-crystalline diamond films grown by microwave CVD. Solid State Comm.. 107:301-305.
Chen*, KH, Bhusari DM, Yang JR, Lin ST, Wang TY, Chen LC.  1998.  Highly transparent nano-crystalline diamond films via substrate pretreatment and methane fraction optimization. Thin Solid Films. 332:34-39.
Bhusari, DM, Yang JR, Wang TY, Chen KH, Chen LC.  1998.  Novel Two Stage Method for Growth of Highly Transparent Nano-crystalline Diamond Films. Mater. Lett.. 36:279.
Chen, KH, Bhusari DM, Wu JJ, Wei SL, Liu RL, Chen LC.  1998.  Silicon-containing Crystalline Carbon Nitride: a Novel Wide Band Gap Material. the symposium on Light Emitting Devices for Optoelectronic Applications, Electrochemical Society. :Vol98-2,417-433.
Lu, TR, Chen LC, Chen KH, Bhusari DM, Chen TM, Kuo CT.  1998.  Sputtering Process of Carbon Nitride Films by Using a Novel Bio-Molecular C-N Containing Target. Thin Solid Films. 332:74.
Wu, JT, Fang TH, Hsu CF, Yu YY, Wang GJ, Tang CW, Chen KH, Lii KH.  1998.  Synthesis and Characterization of an Organic-inorganic Hybrid Compound: [WO3(2,2’-bipyridine)]. J. Matter. Chem.. 8:2181.
Chen, LC, Lu TR, Bhusari DM, Wu JJ, Chen KH, Kuo CT, Chen TM.  1998.  The Use of a Bio-molecular Target for Crystalline Carbon Nitride Film Deposition by Ar Ion-Beam Sputtering without Other Source of Nitrogen. Appl. Phys. Lett.. 72:3449.
1997
Williamson, AJ, Rajagopal G, Needs RJ, Fraser LM, Foulkes WMC, Wang Y, Chou MY.  1997.  Elimination of Coulomb finite-size effects in quantum many-body simulations, Feb. Physical Review B. 55:R4851-R4854., Number 8 AbstractWebsite

A model interaction is introduced for quantum many-body simulations of Coulomb systems using periodic I boundary conditions. The interaction gives much smaller finite size effects than the standard Ewald interaction and is also much faster to compute. Variational quantum Monte Carlo simulations of diamond-structure silicon with up to 1000 electrons demonstrate the effectiveness of our method.

Hong, IH, Jih MC, Chou YC, Wei CM.  1997.  Holography with Kikuchi electrons: Direct imaging of ordered trimers on Au/Si(111)(root 3x root 3)R30 degrees and Sb/Si(111)(root 3x root 3)R30 degrees interfaces, Aug. Surface Review and Letters. 4:733-756., Number 4 AbstractWebsite

The structural bases on the metal/semiconductor interfaces, such as gold trimers on the Au/Si (111)(root 3 x root 3)R30 degrees surface and antimony trimers on the Sb/Si(111)(root 3 x root 3)R30 degrees surface, can be imaged directly with a simple inversion of low-energy (<600 eV) Kikuchi-electron patterns (Kikuchi-electron holography-KEH). The relative positions of the building blocks (trimers) on the adsorbates to the substrate atoms are also determined. This short-range-order KEH tool, which provides the 3D Patterson function, can be viewed as a twin of grazing-incidence X-ray diffraction. Using direct structural information obtained by KEH, one can greatly reduce the tested models in a complete trial-and-error structural-determination process.

Chou, MY.  1997.  Modern electronic-structure calculations for real materials, Aug. Chinese Journal of Physics. 35:365-372., Number 4 AbstractWebsite

This paper gives a brief overview of the capability of modern electron-structure calculations, the widely used density-functional theory, and the challenge to search for the exact nonlocal exchange-correlation functional. The study of the thermal properties of silicon is used as an example to illustrate the accuracy accomplished by the state-of-the-art first-principles calculations. A recent attempt to extract quantities of central importance in density function theory via computational many-body techniques is also discussed.

Hood, RQ, Chou MY, Williamson AJ, Rajagopal G, Needs RJ, Foulkes WMC.  1997.  Quantum Monte Carlo investigation of exchange and correlation in silicon, Apr. Physical Review Letters. 78:3350-3353., Number 17 AbstractWebsite

Realistic many-body wave functions for diamond-structure silicon are constructed for different values of the Coulomb coupling constant. The coupling-constant-integrated pair correlation function, the exchange-correlation hole, and the exchange-correlation energy density are calculated and compared with those obtained from the local density and average density approximations. We draw conclusions about the reasons for the success of the local density approximation and suggest a method for testing the effectiveness of exchange-correlation functionals.

Foulkes, WMC, Nekovee M, Hood RQ, Chou MY, Needs RJ, Rajagopal G, Williamson AJ.  1997.  Quantum Monte Carlo studies of exchange and correlation in solids, Apr. Abstracts of Papers of the American Chemical Society. 213:125-COMP. AbstractWebsite
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Hong, S, Chou MY.  1997.  Theoretical study of hydrogen-covered diamond (100) surfaces: A chemical-potential analysis, Apr. Physical Review B. 55:9975-9982., Number 15 AbstractWebsite

The bare and hydrogen-covered diamond (100) surfaces were investigated through pseudopotential density-functional calculations within the local-density approximation. Different hydrogen coverages, ranging from one to two, were considered. These corresponded to different structures (1x1, 2x1, and 3x1) and different hydrogen-carbon arrangements (monohydride, dihydride, and configurations in between). Assuming the system was in equilibrium with a hydrogen reservoir, the formation energy of each phase was expressed as a function of hydrogen chemical potential. As the chemical potential increased, the stable phase successively changed from bare 2x1 to (2x1):H, to (3x1):1.33H, and finally to the canted (1x1):2H. Setting the chemical potential at the energy per hydrogen in H-2 and in a free atom gave the (3x1):1.33H and the canted (1x1):2H phase as the most stable one, respectively. However, after comparing with the formation energy of CH4, only the (2x1):H and (3x1):1.33H phases were stable against spontaneous formation of CH4. The former existed over a chemical potential range ten times wider than the latter, which may explain why the latter, despite having a low energy, has not been observed so far. Finally, the vibrational energies of the C-H stretch mode were calculated for the (2x1):H phase.

Bhusari, DM, Chen CK, Chen KH, Chuang TJ, Chen LC, Lin MC.  1997.  Composition of SiCN Crystals Consisting of a Predominantly Carbon-nitride Network. J. Mater. Res.. 12:322.
Cheng, C-L, Chang H-C, Lin J-C, Song K-J, Wang J-K.  1997.  Direct Observation of Hydrogen Etching Anisotropy on Diamond Single Crystal Surfaces.. Phy. Rev. Lett.. 78:3713-3716.17-phy._rev._lett._vol_78_p_3713-3716_1997.pdf
Liu, W-K, Hayashi M, Lin J-C, Chang H-C, Lin SH, Wang J-K.  1997.  Effect of Temperature on the IR and SFG Spectra of Adsorbates. J. Chem. Phys.. 106:5920-5927.16-j._chem._phys._vol_106_p_5920-5927_1997.pdf
Chen, LC, Chen CK, Bhusari DM, Chen KH, Wei SL, Chen YF, Jong YC, Lin DY, Li CF, Huang YS.  1997.  Growth of Ternary Silicon Carbon Nitride as a New Wide Band Gap Material. MRS Symp.. :Vol.468,31.