Tin monosulfide (SnS), an affordable group IV-VI binary compound, has emerged as a promising semiconductor due to its abundance and low toxicity. The exceptionally low thermal conductivity from the strong lattice anharmonicity makes this material suitable for thermoelectric applications. However, the poor thermoelectric properties of polycrystalline, compared to its single-crystal counterpart, remain the challenge. Furthermore, the anisotropic performance based on the sintering process complicates the preparation of this polycrystalline material. In this study, we successfully improved the electrical transport properties of polycrystalline SnS by employing the in-plane transport properties with texture modulation from hot-pressing at 973 K. This enhancement led to the high electrical conductivity of ≈ 55 S cm−1 in polycrystalline Na-doped SnS observed at room temperature. Additionally, the hole carrier concentration of p-type SnS was further optimized by co-doping of Na and Ag. Our co-doped SnS exhibits a relatively high power factor peak of ≈ 4.49 μWcm−1K−2 at 473 K. With the significant improvement of the electrical conductivities, the thermal conductivities remained unaltered. This work successfully demonstrated a substantial enhancement by ∼66.7 % in the thermoelectric figure of merit (zT) from 0.18 to 0.3 at a relatively low temperature of 573 K in polycrystalline SnS via the microstructural modification from texturing and the optimization of carrier concentration from co-doping.
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