Publications

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2006
Yang, J, Liu TW, Hsu CW, Chen LC, Chen KH, Chen* CC.  2006.  Controlled growth of aluminium nitride nanorod arrays via chemical vapour deposition. Nanotechnology. 17:S321-326.
Liu, SH, Lu RF, Huang SJ, Lo AY, Chien SH, Liu SB.  2006.  Controlled synthesis of highly dispersed platinum nanoparticles in ordered mesoporous carbon. Chemical Communications. :3435-3437.b607449a.pdf
Chang, CY, Lan TW, Chi GC, Chen* LC, Chen KH, Chen JJ, Jang S, Ren F, Pearton SJ.  2006.  Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires. Electrochemical and Solid-State Lett.. 9:G155-G157.
Pao, CW, Babu PD, Tsai HM, Chiou JW, Ray SC, Yang SC, Chien FZ, Pong* WF, Tsai M-H, Hsu CW, Chen LC, Chen KH, Lin H-J, Lee JF, Guo JH.  2006.  Electronic structure of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy. Appl. Phys. Lett.. 88:223113-(1-3).
Lo, HC, Huang YF, Chattopadhyay S, Hsu CH, Chen CF, Chen KH, Chen* LC.  2006.  Geometrically tuned and chemically switched wetting properties of silicon nanotips. Nanotechnology. 17:2542-2545.
Z. H. Shen, Hess* P, Huang JP, Lin YC, Chen KH.  2006.  Influence of oxygen on the elastic properties of nanocrystalline diamond films studied by laser-induced surface acoustic waves. Ultrasonics. 44:e1229-e1232.
Shen, ZH, Hess* P, Huang JP, Lin YC, Chen KH, Chen LC, Lin ST.  2006.  Mechanical properties of nanocrystalline diamond films. J. Appl. Phys.. 99:124302-(1-6).
Hsu, CH, Huang YF, Chen LC, Chattopadhyay* S, Chen KH, Lo HC, Chen CF.  2006.  Morphology control of Si nanotips fabricated by electron cyclotron resonance plasma etching. J. Vac. Sci. Technol. . B24:308-311.
Hwang*, JS, Hu ZS, Lu TY, Chen LW, Chen SW, Lin TY, Hsiao CL, Chen KH, Chen LC.  2006.  Photo-assisted local oxidation of GaN using an atomic force microscope. Nanotechnology. 17:3299-3303.
Su, C, Chen C-C, Tsai C-S, Lin J-L, Lin J-C.  2006.  Photochemistry of Monolayer CH3I on the Ag-covered TiO2 (110) Surface. Japanese J Appl. Phys. . 45:7845-7853.2-japan_japplphys_vol_45_p_78457853_2006.pdf
Chen*, CW, Huang CC, Lin YY, Su WF, Chen* LC, Chen KH.  2006.  Photoconductivity and highly selective UV sensing features of amorphous silicon carbon nitride thin films. Appl. Phys. Lett.. 88:073515-(1-3).
Venugopal, R, Lin P-I, Chen Y-T.  2006.  Photoluminescence and Raman scattering from catalytically grown ZnxCd1-xSe alloy nanowires. Journal of Physical Chemistry B. 110:11691–11696.view pdf
Kuo, CK, Hsu CW, Wu CT, Lan ZH, Mou CY, Chen CC, Yang YJ, Chen LC, Chen* KH.  2006.  Self-regulating and diameter-selective growth of GaN nanowires. Nanotechnology. 17:S332-337.
Chen, WH, Ko HH, Sakthivel A, Huang SJ, Liu SH, Lo AY, Tsai TC, Liu SB.  2006.  A solid-state NMR, FT-IR and TPD study on acid properties of sulfated and metal-promoted zirconia: Influence of promoter and sulfation treatment. Catalysis Today. 116:111-120.
Huang, SJ, Tseng YH, Mou Y, Liu SB, Huang SJ, Lin CP, Chen CC.  2006.  Spectral editing based on selective excitation and Lee-Goldburg cross-polarization under magic angle spinning. Solid State Nuclear Magnetic Resonance. 29:272-277.
Lo, AY, Huang SJ, Chen WH, Peng YR, Kuo CT, Liu SB.  2006.  Template-assisted synthesis of mesoporous tubular carbon nanostructure by chemical vapor infiltration method. Thin Solid Films. 498:193-197.
2005
Killian, TC, Chen YC, Gupta P, Laha S, Martinez YN, Mickelson PG, Nagel SB, Saenz AD, Simien CE.  2005.  Ultracold neutral plasmas, May. Plasma Physics and Controlled Fusion. 47:A297-A306. AbstractWebsite

Ultracold neutral plasmas are formed by photo-ionizing laser-cooled atoms near the ionization threshold. Through the application of atomic physics techniques and diagnostics, these experiments stretch the boundaries of traditional neutral plasma physics. The electron temperature in these plasmas ranges from 1 to 1000 K and the ion temperature is around 1 K. The density can approach 10(11) cm(-3). Fundamental interest stems from the possibility of creating strongly coupled plasmas, but recombination, collective modes, and thermalization in these systems have also been studied. Optical absorption images of a strontium plasma, using the Sr+ S-2(1/2) -> P-2(1/2) transition at 422 mn, depict the density profile of the plasma, and probe kinetics on a 50 ns time-scale. The Doppler-broadened ion absorption spectrum measures the ion velocity distribution, which gives an accurate measure of the ion dynamics in the first microsecond after photo-ionization.

Killian, TC, Chen YC, Gupta P, Laha S, Martinez YN, Mickelson PG, Nagel SB, Saenz AD, Simien CE.  2005.  Absorption imaging and spectroscopy of ultracold neutral plasmas, Jan 28. Journal of Physics B-Atomic Molecular and Optical Physics. 38:S351-S362. AbstractWebsite

Absorption imaging and spectroscopy can probe the dynamics of an ultracold neutral plasma during the first few microseconds after its creation. Quantitative analysis of the data, however, is complicated by the inhomogeneous density distribution, expansion of the plasma and possible lack of global thermal equilibrium for the ions. In this paper, we describe methods for addressing these issues. Using simple assumptions about the underlying temperature distribution and ion motion, the Doppler-broadened absorption spectrum obtained from plasma images can be related to the average temperature in the plasma.

Simien, CE, Chen YC, Gupta P, Laha S, Martinez YN, Mickelson PG, Nagel SB, Killian TC.  2005.  Absorption imaging of ultracold neutral plasmas, Apr. Ieee Transactions on Plasma Science. 33:540-541. AbstractWebsite

We report optical absorption imaging of ultracold neutral plasmas. Imaging allows direct observation of the ion density profile and expansion of the plasma. The frequency dependence of the plasma's optical depth gives the ion absorption spectrum, which is broadened by the ion motion. We use the spectral width to monitor ion equilibration in the first 250 ns after plasma formation. On a microsecond time scale, we observe the radial acceleration of ions resulting from pressure exerted by the trapped electron gas.

Chen, WH, Huang SJ, Ko HH, Lo AY, Lee HK, Wu LL, Cheng CF, Liu SB.  2005.  Acidity and sorption properties of nano-sized mesoporous aluminosilicate materials. Nanoporous Materials Iv . 156:657-662.
Tsai, TC, Wang LW, Lu CL, Tsai PR, Chen HW, Liao PH, Liu SB.  2005.  Advanced Functional Materials. Molecular Sieves: From Basic Research to Industrial Applications, Pts a and B. 158:1929-1936.
Chen, CW, Huang CC, Lin YY, Chen LC, Chen KH.  2005.  Affinity of Si-N and Si-C bond in the SiCN thin films - experimental and theoretical approaches. Diamond Relat. Mater.. 14:1126-1130.
W.Chiou, J, Tsai HM, Pao CW, Dong* CL, Chang CL, Chien FZ, Pong WF, Tsai M-H, Shi SC, Chen CF, Chen LC, Chen KH, Hong I-H, Chen C-H, Lin H-J, Guo JH.  2005.  Comparison of the electronic structures of AlN nanotips grown on p- and n-type Si substrates. J. Phys.: Condens. Matter. 17:7523-7530.