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Hong, S, Chou MY.  1998.  Role of hydrogen in SiH2 adsorption on Si(100), Nov. Physical Review B. 58:13363-13366., Number 20 AbstractWebsite

When disilane (Si2H6) is used in the homoepitaxial growth of Si by chemical vapor deposition (CVD), the fragment SiH2 is believed to be the basic unit adsorbed on the surface. The bonding site of SiH2 on Si(100) has been proposed in the literature to be either on top of a dimer (the on-dimer site) or between two dimers in the same row (the intrarow site). Since the pathway of SiH2 combination is dependent on the adsorption site, a first-principles calculation will shed light on the underlying process. We have performed self-consistent pseudopotential density-functional calculations within the local-density approximation. On the bare Si(100) surface, the on-dimer site is found to be more stable than the intrarow site, even though the former has unfavorable Si-Si bond angles. This is ascribed to the extra dangling bond created in the latter geometry when the weak dimer a bonds are broken. However, the presence of hydrogen adatoms eliminates this difference and makes the intrarow site more favorable than the on-dimer site. It is therefore revealed in this theoretical study that hydrogen, an impurity unavoidable in the CVD process, plays an important role in determining the stable configuration of adsorbed SiH2 on Si(100) and hence affects the growth mechanism. [S0163-1829(98)52544-1].

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Chou, MY, Wei SQ, Vanderbilt D.  1993.  SHOULD ALL SURFACES BE RECONSTRUCTED - COMMENT, Jul. Physical Review Letters. 71:461-461., Number 3 AbstractWebsite
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Yan, JA, Yang L, Chou MY.  2007.  Size and orientation dependence in the electronic properties of silicon nanowires, Sep. Physical Review B. 76:6., Number 11 AbstractWebsite

By using first-principles pseudopotential methods, we have studied the electronic properties of hydrogen-passivated silicon nanowires along the [100], [110], and [111] directions with diameter up to 3.4 nm. It is found that as the diameter decreases, the energy band gaps are distinctly enlarged due to the confinement effect. The valence-band maximum moves down while the conduction-band minimum moves up compared with the bulk. By using the many-body perturbation theory within the GW approximation, we have also investigated the self-energy correction to the energy band gaps. Our calculational results show that, although the band gap values strongly depend on both the diameter and orientation, the GW corrections are mainly dependent on diameter and less sensitive to the growth orientation. The effective mass as a function of diameter is also discussed.

Huang, L, Lu N, Yan JA, Chou MY, Wang CZ, Ho KM.  2008.  Size- and strain-dependent electronic structures in H-passivated Si 112 nanowires, Oct. Journal of Physical Chemistry C. 112:15680-15683., Number 40 AbstractWebsite

Using first-principles calculations within density functional theory, we have investigated the electronic properties of H-passivated Si nanowires (SiNWs) oriented along the 112 direction, with the atomic geometries retrieved via global search using genetic algorithm. We show that [112] SiNWs have an indirect band gap in the ultrathin diameter regime, whereas the energy difference between the direct and indirect fundamental band gaps progressively decreases as the wire size increases, indicating that larger [112] SiNWs could have a quasi-direct band gap. We further show that this quasi-direct gap feature can be enhanced when applying uniaxial compressive stress along the wire axis. Moreover, our calculated results also reveal that the electronic band structure is sensitive to the change of the aspect ratio of the cross sections.

Kidd, TE, Miller T, Chou MY, Chiang TC.  2000.  Sn/Ge(111) surface charge-density-wave phase transition, Oct. Physical Review Letters. 85:3684-3687., Number 17 AbstractWebsite

Angle-resolved photoemission has been utilized to study the surface electronic structure of 1/3 monolayer of Sn on Ge(lll) in both the room-temperature (root3 x root3)R30 degrees phase and the low-temperature (3 x 3) charge-density-wave phase. The results reveal a gap opening around the (3 x 3) Brillouin zone boundary, suggesting a Peierls-like transition despite the well-documented lack of Fermi nesting, a highly sensitive electronic response to doping by intrinsic surface defects is the cause for this unusual behavior, and a detailed calculation illustrates the origin of the (3 x 3) symmetry.

Feng, B, Chan Y-H, Feng Y, Liu R-Y, Chou MY, Kuroda K, Yaji K, Harasawa A, Moras P, Barinov A, Malaeb WG, Bareille C, Kondo T, Shin S, Komori F, Chiang T-C, Shi Y, Matsuda I.  2016.  Spin Texture in Type II Weyl Semimetal WTe2. PHYSICAL REVIEW B. 94(19):195134.
Cai, Y, Chuu C-P, Wei CM, Chou MY.  2013.  Stability and electronic properties of two-dimensional silicene and germanene on graphene. Physical Review B. 88, Number 24 Abstract
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Zhang, F, Wang Y, Chou MY.  2011.  Stability of the hydrogen-storage compound Li(6)Mg(NH)(4) from first principles, Jan. Physical Review B. 83:4., Number 1 AbstractWebsite

It has been demonstrated that replacing Li(2)NH with the mixed imide Li(2)Mg(NH)(2) improves the reaction conditions for the hydrogen-storage system Li(2)NH + H(2) <-> LiNH(2) + LiH, at the expense of reducing the gravitational hydrogen capacity from 6.5% to 5.6%. In this article, we report from first-principles calculations a possible mixed imide Li(6)Mg(NH)(4) that has less Mg concentration and higher gravimetric capacity for hydrogen storage than Li(2)Mg(NH)(2). We find that Li(6)Mg(NH)(4) is thermodynamically more stable than the phase-separated mixture of Li(2)Mg(NH)(2) and Li(2)NH over a large temperature range. The reaction LiH + 1/4Mg(NH(2))(2) + 1/2LiNH(2) <-> 1/4Li(6)Mg(NH)(4) + H(2) can be completed via two steps and releases 6.0 wt % hydrogen in total, at a temperature about 40 degrees C lower than that for the cycling between LiNH(2) and Li(2)NH.

Lin, Y-C, Yeh C-H, Lin H-C, Siao M-D, Liu Z, Nakajima H, Okazaki T, Chou M-Y, Suenaga K, Chiu P-W.  2018.  Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures. ACS Nano. 12:12080-12088., Number 12 AbstractWebsite
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Zhang, D, Ha J, Baek H, Chan Y-H, Natterer FD, Myers AF, Schumacher JD, Cullen WG, Davydov AV, Kuk Y, Chou MY, Zhitenev NB, Stroscio JA.  2017.  Strain Engineering a 4a×√3a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe2, Jul. Phys. Rev. Materials. 1:024005.: American Physical Society AbstractWebsite
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Natterer, FD, Zhao Y, Wyrick J, Chan Y-H, Ruan W-Y, Chou M-Y, Watanabe K, Taniguchi T, Zhitenev NB, Stroscio JA.  2015.  Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons. Physical Review Letters. 114, Number 24 Abstract
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Yan, JA, Xian LD, Chou MY.  2009.  Structural and Electronic Properties of Oxidized Graphene, Aug. Physical Review Letters. 103:4., Number 8 AbstractWebsite

We have systematically investigated the effect of oxidation on the structural and electronic properties of graphene based on first-principles calculations. Energetically favorable atomic configurations and building blocks are identified, which contain epoxide and hydroxyl groups in close proximity with each other. Different arrangements of these units yield a local-density approximation band gap over a range of a few eV. These results suggest the possibility of creating and tuning the band gap in graphene by varying the oxidation level and the relative amount of epoxide and hydroxyl functional groups on the surface.

Wang, Y, Chou MY.  1995.  STRUCTURAL AND ELECTRONIC-PROPERTIES OF HEXAGONAL YTTRIUM TRIHYDRIDE, Mar. Physical Review B. 51:7500-7507., Number 12 AbstractWebsite
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Chou, MY, Chelikowsky JR.  1987.  STRUCTURAL-PROPERTIES OF THE RU(0001) SURFACE, Feb. Physical Review B. 35:2124-2127., Number 5 AbstractWebsite
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Zhuo, KN, Chou MY.  2013.  Surface passivation and orientation dependence in the electronic properties of silicon nanowires, Apr. Journal of Physics-Condensed Matter. 25:11., Number 14 AbstractWebsite

Various surface passivations for silicon nanowires have previously been investigated to extend their stability and utility. However, the fundamental mechanisms by which such passivations alter the electronic properties of silicon nanowires have not been clearly understood thus far. In this work, we address this issue through first-principles calculations on fluorine, methyl and hydrogen passivated [110] and [111] silicon nanowires. Comparing these results, we explain how passivations may alter the electronic structure through quantum confinement and strain and demonstrate how silicon nanowires may be modelled by an infinite circular quantum well. We also discuss why [110] nanowires are more strongly influenced by their surface passivation than [111] nanowires.

Zhuo, K, Chou M-Y.  2013.  Surface passivation and orientation dependence in the electronic properties of silicon nanowires. Journal of Physics-Condensed Matter. 25, Number 14 Abstract
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Tsai, Y, Chu Z, Han Y, Chuu C-P, Wu D, Johnson A, Cheng F, Chou M-Y, Muller DA, Li X, Lai K, Shih C-K.  2017.  Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement. Advanced Materials. :1703680–n/a. AbstractWebsite

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Lam, PK, Chou MY, Cohen ML.  1984.  TEMPERATURE-INDUCED AND PRESSURE-INDUCED CRYSTAL PHASE-TRANSITIONS IN BE. Journal of Physics C-Solid State Physics. 17:2065-2073., Number 12 AbstractWebsite
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Chou, MY, Cohen ML, Louie SG.  1986.  THEORETICAL COMPTON PROFILES OF GRAPHITE AND LIC6, May. Physical Review B. 33:6619-6626., Number 10 AbstractWebsite
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Zhang, F, Wang Y, Chou MY.  2010.  Theoretical investigation of intermediate phases between Li(2)NH and LiNH(2), Sep. Physical Review B. 82:6., Number 9 AbstractWebsite

Lithium imide (Li2NH) has been considered as a promising medium for hydrogen storage with the following reaction: LiNH(2)+LiH <-> Li(2)NH+H(2). All possible phases involved in the reaction need to be fully characterized in order to understand the right pathway connecting the two end compounds LiNH(2) and Li(2)NH and to further improve its reaction condition to meet the requirements of practical applications. We study from first-principles calculations the possible intermediate compounds Li(2-x)NH(1+x) between Li(2)NH and LiNH(2). Based on the energetics results, possible intermediate phases are identified for 0

Hong, S, Chou MY.  1997.  Theoretical study of hydrogen-covered diamond (100) surfaces: A chemical-potential analysis, Apr. Physical Review B. 55:9975-9982., Number 15 AbstractWebsite

The bare and hydrogen-covered diamond (100) surfaces were investigated through pseudopotential density-functional calculations within the local-density approximation. Different hydrogen coverages, ranging from one to two, were considered. These corresponded to different structures (1x1, 2x1, and 3x1) and different hydrogen-carbon arrangements (monohydride, dihydride, and configurations in between). Assuming the system was in equilibrium with a hydrogen reservoir, the formation energy of each phase was expressed as a function of hydrogen chemical potential. As the chemical potential increased, the stable phase successively changed from bare 2x1 to (2x1):H, to (3x1):1.33H, and finally to the canted (1x1):2H. Setting the chemical potential at the energy per hydrogen in H-2 and in a free atom gave the (3x1):1.33H and the canted (1x1):2H phase as the most stable one, respectively. However, after comparing with the formation energy of CH4, only the (2x1):H and (3x1):1.33H phases were stable against spontaneous formation of CH4. The former existed over a chemical potential range ten times wider than the latter, which may explain why the latter, despite having a low energy, has not been observed so far. Finally, the vibrational energies of the C-H stretch mode were calculated for the (2x1):H phase.

Nguyen, D-L, Wei C-M, Chou M-Y.  2019.  Theoretical study of quantum size effects in thin Al(100), Al(110), and Al(111) films, May. Phys. Rev. B. 99:205401.: American Physical Society AbstractWebsite
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Zhang, F, Wang Y, Chou MY.  2011.  Theoretical study of the vibrational properties of NaAlH(4) with AlH(3) vacancies. Faraday Discussions. 151:243-251. AbstractWebsite

It has been suggested that the diffusion of AlH(3) vacancies plays an essential role in the decomposition of NaAlH(4), a prototypical material for hydrogen storage. We find from first-principles calculations that the AlH(3) vacancy induces several isolated vibrational modes that are highly localized in the vacancy region with frequencies within the phonon gaps of pure NaAlH(4) in both the a and g phases. Thus, the proposed existence of AlH(3) vacancies in the dehydrogenation reaction of NaAlH(4) can be possibly confirmed with the experimental detection of these unique vibrational modes associated with the AlH(3) vacancy.

Chou, MY, Cohen ML, Louie SG.  1985.  THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON. Physical Review B. 32:7979-7987., Number 12 AbstractWebsite
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Wang, Y, Chou MY.  1993.  THEORETICAL-STUDY OF THE BINDING-PROPERTIES AND ELECTRONIC-STRUCTURE OF HYDROGEN IN YTTRIUM. Zeitschrift Fur Physikalische Chemie-International Journal of Research in Physical Chemistry & Chemical Physics. 181:39-42. AbstractWebsite

The structural and electronic properties of hydrogen in yttrium are studied using the pseudopotential method within the local-density-functional approximation (LDA). Different concentration regions are considered for the alpha and beta phases. The binding energies associated with different interstitial sites are evaluated as well as the diffusion energy barrier and local vibrational modes. It is found that the occupation of the tetrahedral site is energetically more favorable than that of the octahedral site in the alpha phase. The calculated vibrational frequency is in excellent agreement with the value observed in neutron scattering experiments. Possibility of pairing is also examined from the consideration of energetics.