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Sainbileg, B, Lai Y-R, Chen L-C, Hayashi M.  2019.  The dual-defective SnS2 monolayers: promising 2D photocatalysts for overall water splitting, 2019. Physical Chemistry Chemical Physics. 21(48):26292-26300.: The Royal Society of Chemistry AbstractWebsite

Photocatalytic water splitting is a promising way to produce hydrogen fuel from solar energy. In this regard, the search for new photocatalytic materials that can efficiently split water into hydrogen is essential. Here, using first-principles simulations, we demonstrate that the dual-defective SnS2 (Ni-SnS2-VS), by both single-atom nickel doping and sulfur monovacancies, becomes a promising two-dimensional photocatalyst compared with SnS2. The Ni-SnS2-VS monolayer, in particular, exhibits a suitable band alignment that perfectly overcomes the redox potentials for overall water splitting. The dual-defective monolayer displays remarkable photocatalytic activity, a spatially separated carrier, a broadened optical absorption spectrum, and enhanced adsorption energy of H2O. Therefore, the dual-defective SnS2 monolayer can serve as an efficient photocatalyst for overall water splitting to produce hydrogen fuel. Furthermore, a novel dual-defect method can be an effective strategy to enhance the photocatalytic behavior of 2D materials; it may pave inroads in the development of solar-fuel generation.

Lu, CZ, Goldman J, Deliwala S, Chen KH, Mazur E.  1991.  Durect Evidence for1-mode Excitation in the Infrared Multiphoton Excited SO2. Chem. Phys. Lett.. 176:355.
E
Bayikadi, KS, Imam S, Ubaid M, Aziz A, Chen K-H, Sankar R.  2022.  Effect of aliovalent substituted highly disordered GeTe compound's thermoelectric performance, 2022. 922:166221. AbstractWebsite

As a lead-free high-performance thermoelectric material, germanium telluride (GeTe) has recently been extensively studied for mid-temperature (500–800 K) applications. The carrier concentration and the thermal conductivity are reduced for vacancy-controlled GeTe compounds compared with pristine GeTe. We explored and optimized the Ge0.9−xSb0.1PxTe (x = 0.01–0.05) material's highest thermoelectric performance at elevated temperatures. Intrinsic Ge vacancy control and manipulation of Ge (+2) with Sb/P (+3) increased the charge contribution to power factor improvement to ∼42 µWcm−1 K−2 while minimizing the lattice thermal contribution to ∼0.4 W/mK. This resulted in an increase in thermoelectric performance of ∼2.4 @ 773 K for the Ge0.88Sb0.1P0.02Te sample. The inclusion of atomically disordered Sb/P ions considerably increases the scattering effects caused by the point defect, whereas stretched grain boundaries reveal the decreased lattice thermal contribution. The current work demonstrates the effectiveness of phosphorus as a co-dopant in increasing the average thermoelectric performance (ZTavg) value over the GeTe operating temperature range.

Wu, JJ, Chen KH, Wen C-Y, Chen LC, Lo HJ, Lin ST.  2000.  Effect of carbon sources on SiCN films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor. Diamond & Related Materials. 9:556-561.
Jana, D, Sun CL, Chen LC, Chen KH.  2013.  Effect of chemical doping of boron and nitrogen on the electronic, optical, and electrochemical properties of carbon nanotubes. Progress in Materials Science. 58:565–635.
Lien, HT, Wong DP, Tsao NH, Huang CI, Su C, Chen KH, Chen LC.  2014.  Effect of copper oxide oxidation state on the polymer-based solar cell buffer layers. ACS Appl. Mater. & Inter. .
Wu, JJ, Chen KH, Wen CY, Chen* LC, Yu Y-C, Wang C-W, Lin E-K.  2001.  Effect of dilution gas on SiCN films growth using methylamine. Materials Chemistry and Physics. 72:240-244.
Hwang*, JS, You ZY, Lin SY, Hu ZS, Wu CT, Chen CW, Chen KH.  2005.  Effect of gold coating on local oxidation using an atomic force microscope. Appl. Phys. Lett.. 86:161901-(1-3).
Wu, J-J, Chen KH, Wen C-Y, Chen LC, Yu Y-C, Wang C-W, Lin E-K.  2000.  Effect of hydrogen addition on SiCN films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor. J. Mater. Chem.. 10:783-787.
Chang, CY, Lan TW, Chi GC, Chen* LC, Chen KH, Chen JJ, Jang S, Ren F, Pearton SJ.  2006.  Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires. Electrochemical and Solid-State Lett.. 9:G155-G157.
Ciao-WeiYang, Chin-ChangChen, Chen K-H, SoofinCheng.  2017.  Effect of pore-directing agents in SBA-15 nanoparticles on the performance of Nafion®/SBA-15n composite membranes for DMFC. Journal of Membrane Science. 526:106-117.
Fang*, WC, Leu MS, Chen KH, Chen LC, Huang JH.  2007.  Effect of structural morphology on electrochemical properties of carbon nanotubes directly grown on Ti foil. Electrochemical and Solid-State Lett.. 10:K60-K62.
Das, D, Raha D, Chen WC, Chen KH, Wu CT, Chen LC.  2012.  Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4plasma at low temperature. J. Mater. Res.. 27:1303.
Bhusari, DM, Yang JR, Wang TY, Chen KH, Lin ST, Chen LC.  1998.  Effect of Substrate Pretreatment and Methane Fraction on the Optical Transparency of Nano-crystalline Diamond Thin Films. J. Mater. Res.. 13:1769.
Chou, CT, Tang WL, Lin CH, Liu CH, Chen LC, Chen KH.  2012.  Effect of substrate temperature on orientation of subphthalocyanine molecule in organic photovoltaic cells. Thin Solid Films. 520:2289-2292.
Kuo, CT, Chen LC, Chen KH, Chen TM, Lu TR.  1999.  Effect of target materials on crystalline carbon nitride films preparation by ion beam sputtering. Diamond & Related Materials. 8:1724-1729.
Kuo, CT, Chen LC, Chen KH, Chen TM, Lu TR.  1999.  Effect of Target Materials on Crystalline Carbon Nitride Films Preparation by Ion Beam Sputtering. Diamond & Related Materials. 8:1724.
Fang, WC, Huang* JH, Chen LC, Su OYL, Chen KH.  2006.  Effect of temperature annealing on capacitive and structural properties of hydrous ruthenium oxides. J. Power Sources . 160:1506-1510.
Huang, BR, Jou S, Wu YM, Chen KH, Chen LC.  2010.  Effect of XeF laser treatment on structure of nanocrystalline diamond films. Diamond & Relat. Mater.. 19:445.
Chang, CC, Lin CF, Chiou JM, Ho TH, Tai Y, Lee JH, Chen YF, Wang JK, Chen LC, Chen* KH.  2010.  Effects of cathode buffer layers on the efficiency of bulk-heterojunction solar cells. Appl. Phys. Lett.. 96:263506.
Juan, CP, Tsai CC, Chen KH, Chen LC, Cheng HC.  2005.  Effects of high-density oxygen plasma post-treatment on field emission properties of carbon nanotube field-emission displays. Jpn. J. Appl. Phys.. 44:8231-8236.
Lin, YG, Hsu YK, Yang JL, Chen SY, Chen* KH, Chen LC.  2009.  Effects of nitrogen-doping on the microstructure, bonding and electrochemical activity of carbon nanotubes. Diamond Relat. Mater.. 18:433-437.
Krishnamoorthy, V, Bangolla HK, Chen C-Y, Huang Y-T, Cheng C-M, Ulaganathan RK, Sankar R, Lee K-Y, Du H-Y, Chen L-C, Chen K-H, Chen R-S.  2024.  Efficient Hydrogen Evolution Reaction in 2H-MoS2 Basal Planes Enhanced by Surface Electron Accumulation, 2024. Catalysts. 14(1) Abstract

An innovative strategy has been developed to activate the basal planes in molybdenum disulfide (MoS2) to improve their electrocatalytic activity by controlling surface electron accumulation (SEA) through aging, annealing, and nitrogen-plasma treatments. The optimal hydrogen evolution reaction (HER) performance was obtained on the surface treated with nitrogen-plasma for 120 s. An overpotential of 0.20 V and a Tafel slope of 120 mV dec−1 were achieved for the optimized condition. The angle-resolved photoemission spectroscopy measurement confirmed the HER efficiency enhanced by the SEA conjugated with the sulfur vacancy active sites in the MoS2 basal planes. This study provides new insight into optimizing MoS2 catalysts for energy applications.

Y.K.Lin, Su YH, Huang YH, Hsu CH, Lin YG, Hsu YK, Chen LC, Chen KH.  2009.  Efficient hydrogen production using Cu-based catalysts prepared via homogeneous precipitation. J. Mater. Chem.. 19:9186-9194.
Philip, J, Hess* P, Feygelson T, Butler JE, Chattopadhyay S, Chen KH, Chen LC.  2003.  Elastic, mechanical, and thermal properties of nanocrystalline diamond films. J. Appl. Phys.. 93:2164-2171.