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Chang, CY, Pearton* SJ, Huang PJ, G.C. Chi H, Wang T, Chen JJ, Ren F, Chen KH, Chen LC.  2007.  Control of nucleation site density of GaN nanowires. Appl. Surf. Sci.. 253:3196-3200.
Wu, JC, Chen CC, Chen KH, Chang* YC.  2011.  Controlled growth of aligned Alpha-helical polypeptide brushes for tunable electrical conductivity. ,Appl. Phys. Lett.. 98:133304.
Yang, J, Liu TW, Hsu CW, Chen LC, Chen KH, Chen* CC.  2006.  Controlled growth of aluminium nitride nanorod arrays via chemical vapour deposition. Nanotechnology. 17:S321-326.
Yang, TH, Chen CH, Chatterjee A, Li HY, Lo JT, Wu CT, Chen KH, Chen* LC.  2003.  Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties. Chem. Phys. Lett.. 379:155-161.
Du, H-Y, Wang C-H, Hsu H-C, Chang S-T, Chen U-S, Yen SC, Chen LC, Shih H-C, Chen* KH.  2008.  Controlled platinum nanoparticles uniformly dispersed on nitrogen-doped carbon nanotubes for methanol oxidation. Diamond & Relat. Mater.. 17:535-541.
Chen*, LC, Wen CY, Liang CH, Hong WK, Chen KJ, Cheng HC, Shen CS, Wu CT, Chen KH.  2002.  Controlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor deposition. Adv. Fun. Mate. 12:687-692.
Syum, Z, Billo T, Sabbah A, Venugopal B, Yu S-Y, Fu F-Y, Wu H-L, Chen L-C, Chen K-H.  2021.  Copper Zinc Tin Sulfide Anode Materials for Lithium-Ion Batteries at Low Temperature, 2021. ACS Sustainable Chemistry & EngineeringACS Sustainable Chemistry & Engineering. : American Chemical Society AbstractWebsite
Aravind, K, Su YW, Ho IL, Wu CS, Chang-Liao KS, Su WF, Chen KH, Chen LC, Chen CD.  2009.  Coulomb blockade behavior in an indium nitride nanowire with disordered surface states. Appl. Phys. Lett.. 95:092110-(1-3).
Chen, LC, Chen KH, Wei SL, Kichambare PD, Wu JJ, Lu TR, Kuo CT.  1999.  Crystalline SiCN: ahard material rivals to cubic BN. Thin Solid Films. 355:112-116.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline silicon carbon nitride: a wide band gap semiconductor. Appl. Phys. Lett.. 72:2463-2465.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Wu, JJ, Wu CT, Liao YC, Lu TR, Chen LC, Chen KH, Hwa LG, Kuo CT, Ling KJ.  1999.  Deposition of silicon carbon nitride by ion-beam sputtering. Thin Solid Films. 355:417-422.
Huang, YF, Jen YJ, Chen LC, Chen KH, Chattopadhyay S.  2015.  Design for approaching cicada-wing reflectance in low and high index biomimetic nanostructures. ACS Nano . 9:301-311.
Chang, HJ, Chen CH, Chen* YF, Lin TY, Chen LC, Chen KH, Lan ZH.  2005.  Direct evidence of nanocluster-induced luminescence in InGaN epifilms. Appl. Phys. Lett.. 86:021911-(1-3).
Dhara, S, Chang CW, Tsai HM, Chen* LC, Chen KH.  2010.  Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. Appl. Phys. Lett.. 96:253113.
Sakthivel, A, Huang SJ, Chen WH, Lan ZH, Chen KH, Lin HP, Mou CY, Liu* SB.  2005.  Direct synthesis of highly stable mesoporous molecular sieve (MMS-H) containing zeolite building units. Adv. Func. Mater.. 15:253-258.
Lai, YT, Ganguly A, Chen CP, Chen KH, Chen* LC.  2010.  Direct voltammetric sensing of L-cysteine atpristine GaN nanowires electrode. Biosensors and Bioelectronics. 26:1688-1691.
Horng, YY, Hsu YK, Chen CC, Chen LC, Chen* KH.  2009.  Direct-growth of polyaniline nanowires for enzyme-immobilization and glucose detection. Electrochem. Comm.. 11:850-853.
Yesi, Y, Shown I, Ganguly A, Ngo TT, Chen LC, Chen KH.  2016.  Directly-grown hierarchical carbon nanotube@polypyrrole core-shell hybrid for high-performance flexible supercapacitors. ChemSusChem . 9:370-378.
Chou, YC, Chattopadhyay S, Chen* LC, Chen YF, Chen KH.  2003.  Doping and electrical properties of amorphous silicon carbon nitride films. Diamond & Related Materials. 12:1213-1219.
Sainbileg, B, Lai Y-R, Chen L-C, Hayashi M.  2019.  The dual-defective SnS2 monolayers: promising 2D photocatalysts for overall water splitting, 2019. Physical Chemistry Chemical Physics. 21(48):26292-26300.: The Royal Society of Chemistry AbstractWebsite

Photocatalytic water splitting is a promising way to produce hydrogen fuel from solar energy. In this regard, the search for new photocatalytic materials that can efficiently split water into hydrogen is essential. Here, using first-principles simulations, we demonstrate that the dual-defective SnS2 (Ni-SnS2-VS), by both single-atom nickel doping and sulfur monovacancies, becomes a promising two-dimensional photocatalyst compared with SnS2. The Ni-SnS2-VS monolayer, in particular, exhibits a suitable band alignment that perfectly overcomes the redox potentials for overall water splitting. The dual-defective monolayer displays remarkable photocatalytic activity, a spatially separated carrier, a broadened optical absorption spectrum, and enhanced adsorption energy of H2O. Therefore, the dual-defective SnS2 monolayer can serve as an efficient photocatalyst for overall water splitting to produce hydrogen fuel. Furthermore, a novel dual-defect method can be an effective strategy to enhance the photocatalytic behavior of 2D materials; it may pave inroads in the development of solar-fuel generation.

Lu, CZ, Goldman J, Deliwala S, Chen KH, Mazur E.  1991.  Durect Evidence for1-mode Excitation in the Infrared Multiphoton Excited SO2. Chem. Phys. Lett.. 176:355.
Bayikadi, KS, Imam S, Ubaid M, Aziz A, Chen K-H, Sankar R.  2022.  Effect of aliovalent substituted highly disordered GeTe compound's thermoelectric performance, 2022. 922:166221. AbstractWebsite

As a lead-free high-performance thermoelectric material, germanium telluride (GeTe) has recently been extensively studied for mid-temperature (500–800 K) applications. The carrier concentration and the thermal conductivity are reduced for vacancy-controlled GeTe compounds compared with pristine GeTe. We explored and optimized the Ge0.9−xSb0.1PxTe (x = 0.01–0.05) material's highest thermoelectric performance at elevated temperatures. Intrinsic Ge vacancy control and manipulation of Ge (+2) with Sb/P (+3) increased the charge contribution to power factor improvement to ∼42 µWcm−1 K−2 while minimizing the lattice thermal contribution to ∼0.4 W/mK. This resulted in an increase in thermoelectric performance of ∼2.4 @ 773 K for the Ge0.88Sb0.1P0.02Te sample. The inclusion of atomically disordered Sb/P ions considerably increases the scattering effects caused by the point defect, whereas stretched grain boundaries reveal the decreased lattice thermal contribution. The current work demonstrates the effectiveness of phosphorus as a co-dopant in increasing the average thermoelectric performance (ZTavg) value over the GeTe operating temperature range.

Wu, JJ, Chen KH, Wen C-Y, Chen LC, Lo HJ, Lin ST.  2000.  Effect of carbon sources on SiCN films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor. Diamond & Related Materials. 9:556-561.