Lo, WS, Chien TS, Fang BS, Wei CM, Mei WN.
1998.
Photoelectron-diffraction studies of Nb(001), Oct. Surface Review and Letters. 5:1035-1041., Number 5
AbstractPhotoelectron-diffraction studies of Nb(001) have been performed to determine the first-interlayer contraction using Mg K alpha radiation (h nu = 1253.6 eV) as an excitation source. Photoemission intensities of the 3d(5/2) core level were measured as a function of the polar angle along several azimuths on the single-crystal surface. The 202.3-eV (205.0-eV) binding energy for the 3d(5/2) (3d(3/2)) core level was well resolved in the photoemission spectra, where the peak intensity could be easily evaluated by curve-fitting processes. Large oscillations of the 3d(5/2) intensity as a function of the polar angle due to forward-focusing were observed. Based on multiple-scattering calculations for several first-interlayer spacings ranging from the bulk value to 16% contraction, the best agreement with experiment was obtained for a (13 +/- 5)% contraction of the first-interlayer spacing.
Lee, E, Puzder A, Chou MY, Uzer T, Farrelly D.
1998.
Pair-tunneling states in semiconductor quantum dots: Ground-state behavior in a magnetic field, May. Physical Review B. 57:12281-12284., Number 19
AbstractUsing classical mechanical and quantum Monte Carlo methods we trace the ground-state behavior with an applied magnetic field of localized electron pair states in a quantum dot. By developing a method to treat nonconserved paramagnetic interactions using variational and diffusion quantum Monte Carlo techniques we find (i) a single-triplet transition at very small magnetic field strengths, (ii) enhanced localization of the two electrons with increasing magnetic field, and (iii) a mechanism for pair breakup that is different from that proposed recently by Wan et al. [Phys. Rev. Lett. 75, 2879 (1995)]. [S0163-1829(98)04016-8].
Pong, WF, Chang YK, Hsieh HH, Tsai MH, Lee KH, Dann TE, Chien FZ, Tseng PK, Tsang KL, Su WK, Chen LC, Wei SL, Chen KH, Bhusari DM, Chen YF.
1998.
Electronic and Atomic Structures of Si-C-N Thin Film by X-ray-absorption Spectroscopy. J. Electron Spectroscopy and Related Pheno.. 92:115.