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The present investigation mainly addresses the open circuit voltage (Voc) issue in kesterite based Cu2ZnSn(S,Se)4 solar cells by simply introducing alkali metal fluoride nanolayers (~ several nm NaF, or LiF) to lower the work functions of the front ITO contacts without conventional hole-blocking ZnO layers. Kelvin probe measurements confirmed that the work function of the front ITO decreases from 4.82 to 3.39 and 3.65 eV for NaF and LiF, respectively, resulting in beneficial band alignment for electron collection and/or hole blocking on top electrodes. Moreover, a 10.4% power conversion efficiency (~ 11.5% in the cell effective area) CZTSSe cell with improved Voc of up to 90 mV has been attained. This demonstration may provide a new direction of further boosting the performance of copper chalcogenide based solar cells as well.

Photocatalytic formation of hydrocarbons using solar energy via artificial photosynthesis is a highly desirable renewable-energy source for replacing conventional fossil fuels. Using an l-cysteine-based hydrothermal process, here we synthesize a carbon-doped SnS2 (SnS2-C) metal dichalcogenide nanostructure, which exhibits a highly active and selective photocatalytic conversion of CO2 to hydrocarbons under visible-light. The interstitial carbon doping induced microstrain in the SnS2 lattice, resulting in different photophysical properties as compared with undoped SnS2. This SnS2-C photocatalyst significantly enhances the CO2 reduction activity under visible light, attaining a photochemical quantum efficiency of above 0.7%. The SnS2-C photocatalyst represents an important contribution towards high quantum efficiency artificial photosynthesis based on gas phase photocatalytic CO2 reduction under visible light, where the in situ carbon-doped SnS2 nanostructure improves the stability and the light harvesting and charge separation efficiency, and significantly enhances the photocatalytic activity.

AbstractPorous α-Fe2O3 nanoparticles are directly grown on acid treated carbon cloth (ACC) using a simple hydrothermal method (denoted as ACC-α-Fe2O3) for employment as a flexible and wearable electrochemical electrode. The catalytic activity of ACC-α-Fe2O3 allowing the detection of dopamine (DA) is systematically investigated. The results showed that the ACC-α-Fe2O3 electrode exhibits impressive electrochemical sensitivity, stability and selectivity for the detection of DA. The detection limit determined with the amperometric method appears to be around 50nM with a linear range of 0.074–113μM. The impressive DA sensing ability of the as prepared ACC-α-Fe2O3 electrode is due to the good electrochemical behavior and high electroactive surface area (19.96cm2) of α-Fe2O3 nanoparticles anchored on the highly conductive ACC. It is worth noting that such remarkable sensing properties can be maintained even when the electrode is in a folded configuration.

Germanium telluride (GeTe) is a very well known IV–VI group semiconducting material with the advantageous property of showing metallic conduction, which materializes from its superior carrier concentration (n) (high number of Ge vacancies). A systematic investigation into the thermoelectric properties (TEP) of GeTe was reported by way of carrier concentration (n) engineering. The present investigation focuses on studying the effects of doping (antimony – Sb) and co-doping (phosphorus – P) on the TEP of GeTe. In order to understand the system, we have prepared p-type GeTe and Ge0.9−xPxSb0.1Te (x = 0, 0.01, 0.03, or 0.05) samples via a non-equilibrium solid state melt quenching (MQ) process, followed by hot press consolidation. Temperature dependent synchrotron X-ray diffraction studies reveal a phase transition from rhombohedral to simple cubic in the Ge0.9−xPxSb0.1Te system at 573 K, which is clearly reflected in the TEP. Further high resolution transmission electron microscopy (HRTEM) studies reveal the pseudo-cubic nature of the sample. However, powder X-ray diffraction (PXRD) and field emission scanning electron microscopy (FESEM) images and energy dispersive X-ray spectroscopy (EDX) studies confirm the presence of germanium phosphide (GeP) in all P-doped samples. The presence of a secondary phase and point defects (Sb & P) enhanced the additional scattering effects in the system, which influenced the Seebeck coefficient and thermal conductivity of GeTe. A significant enhancement in the Seebeck coefficient (S) to ∼225 μV K−1 and a drastic reduction in thermal conductivity (κ) to ∼1.2 W mK−1 effectively enhanced the figure-of-merit (ZT) to ∼1.72 at 773 K for Ge0.87P0.03Sb0.1Te, which is a ∼3 fold increase for GeTe. Finally, P co-doped Ge0.9Sb0.1Te demonstrates an enhancement in ZT, making it a good candidate material for power generation applications.

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T′ structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T′ layer and an in-gap edge state located near the layer boundary. The system′s 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator–semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.

Abstract Application of lasers is omnipresent in modern-day technology. However, preparation of a lasing device usually requires sophisticated design of the materials and is costly, which may limit the suitable choice of materials and the lasing wavelengths. Random lasers, on the other hand, can circumvent the aforementioned shortcomings with simpler fabrication process, lower processing cost, material flexibility for any lasing wavelengths with lower lasing threshold, providing a roadmap for the design of super-bright lighting, displays, Li-Fi, etc. In this work, ultralow-threshold random laser action from semiconductor nanoparticles assisted by a highly porous vertical-graphene-nanowalls (GNWs) network is demonstrated. The GNWs embedded by the nanomaterials produce a suitable cavity for trapping the optical photons with semiconductor nanomaterials acting as the gain medium. The observed laser action shows ultralow values of threshold energy density ≈10 nJ cm?2 due to the strong photon trapping within the GNWs. The threshold pump fluence can be further lowered to ≈1 nJ cm?2 by coating Ag/SiO2 upon the GNWs due to the combined effect of photon trapping and strong plasmonic enhancement. In view of the growing demand of functional materials and novel technologies, this work provides an important step toward realization of high-performance optoelectronic devices.