Publications

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2004
Dhara, SK, Datta A, Lan ZH, Chen* KH, Wang YL, Shen CS, Chen LC, Hsu CW, Lin HM, Chen CC.  2004.  Blue shift of yellow band in self-ion beam irradiated GaN nanowires. Appl. Phys. Lett.. 84:3486-3488.
Muto*, S, Dhara SK, Datta A, Hsu CW, Wu CT, Shen CH, Chen LC, Chen KH, Wang YL, Tanabe T, Maruyama T, Lin HM, Chen CC.  2004.  Characterization of nanodome on GaN nanowires formed with Ga ion irradiation. Mater. Trans.. 45:435-439.
Huang, BR, Huang CS, Wu CC, Chen LC, Chen KH.  2004.  Electrical properties of annealed MPCVD grown vertically aligned carbon nanotubes films. Diamond & Related Materials. 13:2156-2159.
Ray, SC, Tsai HM, Bao CW, Chiou JW, Jan JC, Kumar K, Pong* WF, Tsai M-H, Chattopadhyay S, Chen LC, Chien SC, Lee MT, Lin ST, Chen KH.  2004.  Electronic and bonding structures of B-C-N thin films by X-ray absorption and photoemission spectroscopy. J. Appl. Phys. . 96:208-211.
Hsu, CH, Lo HC, Chen CF, Wu CT, Hwang JH, Das D, Tsai J, Chen LC, Chen* KH.  2004.  Generally applicable self-masked dry etching technique for nanotip arrays formation. Nano Letters. 4:471-475.
Chatterjee, A, Chattopadhyay S, Hsu CW, Shen CH, Chen* LC, Chen CC, Chen KH.  2004.  Growth and characterization of GaN nanowires produced on different sol-gel derived catalyst dispersed in TiO2 and polyvinyl alcohol matrix. J. Mater. Res.. 19:1768-1774.
Chen, RS, Chang HM, Huang* YS, Tsai DS, Chattopadhyay S, Chen KH.  2004.  Growth and characterization of vertically aligned IrO2 nanotubes. J. Crystal Growth. 271:105-112.
Lan, ZH, Wang WM, Sun CL, Shi SC, Hsu CW, Chen KH, Chen CC, Chen* LC.  2004.  Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods. J. Cryst. Growth. 269:87-94.
Chen, RS, Huang* YS, Tsai DS, Chattopadhyay S, Wu CT, Lan ZH, Chen KH.  2004.  Growth of well aligned IrO2 nanotubes on LiTaO3 (012) substrates. Chem. Mater.. 16:2457-2462.
Dhara, S, Datta A, Wu CT, Lan ZH, Chen* KH, Wang YL, Hsu CW, Shen CH, Chen LC, Chen CC.  2004.  Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation. Appl. Phys. Lett.. 84:5473-5475.
Chen, CH, Chen YF, Lan ZH, Chen LC, Chen KH, Jiang HX, Lin JY.  2004.  Mechanism of enhanced luminescence in InxAlyGa1–x–yN quaternary epilayers. Appl. Phys. Lett.. 84:1480-1482.
Lan, ZH, Dhara SK, Chen* KH, Wu CT, Chen LC, Hsu CW, Chen CC.  2004.  Nanohomojunction (GaN) and nanoheterojunction (InN) nanorods on 1-dimensional GaN nanowire substrates. Adv. Func. Mater.. 14:233-237.
Sakthivel, A, Huang SJ, Chen WH, Lan ZH, Chen KH, Lin HP, Mou CY, Liu* SB.  2004.  Replication of mesoporous aluminosilicate molecular sieves (RMMs) with zeolite framework from mesoporous carbons. Chem. of Mater.. 16:3168-3175.
Dhara*, S, Sundaravel B, K.H. Chen, et al.  2004.  Spillout effect in gold nanoclusters embedded in c-Al2O3(0001) matrix. Chem. Phys. Lett.. 399:354-358.
Chatterjee, A, Shen CH, Ganguly A, Chen* LC, Hsu CW, Hwang JY, Chen KH.  2004.  Strong room-temperature UV emission of nanocrystalline ZnO films derived from a polymeric solution. Chem. Phys. Lett.. 391:278-282.
Chen*, CW, Lee MH, Chen LC, Chen KH.  2004.  Structural and electronic properties of wide band gap silicon carbon nitride materials – afirst principles study. Diamond & Relat. Mater.. 13:1158-1165.
S.C. Ray, Tsai HM, Chiou JW, Jan JC, Kumar K, Pong* WF, Chien FZ, Tsai M-H, Chattopadhyay S, Chen LC, Chien SC, Lee MT, Lin ST, Chen KH.  2004.  X-Ray absorption studies of boron–carbon–nitrogen (BxCyNz ) ternary. Diamond & Related Mater.. 13:1553-1557.
2003
Chang, CS, Chattopadhyay S, Chen* LC, Chen KH, Chen CW, Chen YF, Collazo R, Sitar Z.  2003.  Band gap dependence of field emission from one dimensional nanostructures grown on n-type and p-type silicon substrates. Phys. Rev.. B68:125322-(1-5).
Yang, TH, Chen CH, Chatterjee A, Li HY, Lo JT, Wu CT, Chen KH, Chen* LC.  2003.  Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties. Chem. Phys. Lett.. 379:155-161.
Chou, YC, Chattopadhyay S, Chen* LC, Chen YF, Chen KH.  2003.  Doping and electrical properties of amorphous silicon carbon nitride films. Diamond & Related Materials. 12:1213-1219.
Philip, J, Hess* P, Feygelson T, Butler JE, Chattopadhyay S, Chen KH, Chen LC.  2003.  Elastic, mechanical, and thermal properties of nanocrystalline diamond films. J. Appl. Phys.. 93:2164-2171.
Chiou, JW, Jan JC, Tsai HM, Pong* WF, Tsai MH, Hong IH, Klauser R, Lee JF, Hsu CW, Lin HM, Chen CC, Shen CH, Chen LC, Chen KH.  2003.  Electronic structure of GaN nanowire studied by X-ray-absorption spectroscopy and scanning photoelectron microscopy. Appl. Phys. Lett.. 82:3949-3951.
Dhara, SK, Datta A, Wu CT, Lan ZH, Chen* KH, Wang YL, Chen LC, Hsu CW, Lin HM, Chen CC.  2003.  Enhanced dynamic annealing in self-ion implanted GaN nanowires. Appl. Phys. Lett.. 82:451-453.
Kan, MC, Huang* JL, Sung JC, Chen KH, Lii DF.  2003.  Enhanced field emission from nitrogen-doped amorphous diamond. J. Mater. Res.. 18:1594-1599.
Kan, MC, Huang* JL, Sung J, Lii DF, Chen KH.  2003.  Field emission characteristics of amorphous diamond. J. Am. Cherem. Soc.. 86:1513-1517.