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Bayikadi, KS, Imam S, Ubaid M, Aziz A, Chen K-H, Sankar R.  2022.  Effect of aliovalent substituted highly disordered GeTe compound's thermoelectric performance, 2022. 922:166221. AbstractWebsite

As a lead-free high-performance thermoelectric material, germanium telluride (GeTe) has recently been extensively studied for mid-temperature (500–800 K) applications. The carrier concentration and the thermal conductivity are reduced for vacancy-controlled GeTe compounds compared with pristine GeTe. We explored and optimized the Ge0.9−xSb0.1PxTe (x = 0.01–0.05) material's highest thermoelectric performance at elevated temperatures. Intrinsic Ge vacancy control and manipulation of Ge (+2) with Sb/P (+3) increased the charge contribution to power factor improvement to ∼42 µWcm−1 K−2 while minimizing the lattice thermal contribution to ∼0.4 W/mK. This resulted in an increase in thermoelectric performance of ∼2.4 @ 773 K for the Ge0.88Sb0.1P0.02Te sample. The inclusion of atomically disordered Sb/P ions considerably increases the scattering effects caused by the point defect, whereas stretched grain boundaries reveal the decreased lattice thermal contribution. The current work demonstrates the effectiveness of phosphorus as a co-dopant in increasing the average thermoelectric performance (ZTavg) value over the GeTe operating temperature range.

Wu, JJ, Chen KH, Wen C-Y, Chen LC, Lo HJ, Lin ST.  2000.  Effect of carbon sources on SiCN films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor. Diamond & Related Materials. 9:556-561.
Jana, D, Sun CL, Chen LC, Chen KH.  2013.  Effect of chemical doping of boron and nitrogen on the electronic, optical, and electrochemical properties of carbon nanotubes. Progress in Materials Science. 58:565–635.
Lien, HT, Wong DP, Tsao NH, Huang CI, Su C, Chen KH, Chen LC.  2014.  Effect of copper oxide oxidation state on the polymer-based solar cell buffer layers. ACS Appl. Mater. & Inter. .
Wu, JJ, Chen KH, Wen CY, Chen* LC, Yu Y-C, Wang C-W, Lin E-K.  2001.  Effect of dilution gas on SiCN films growth using methylamine. Materials Chemistry and Physics. 72:240-244.
Hwang*, JS, You ZY, Lin SY, Hu ZS, Wu CT, Chen CW, Chen KH.  2005.  Effect of gold coating on local oxidation using an atomic force microscope. Appl. Phys. Lett.. 86:161901-(1-3).
Wu, J-J, Chen KH, Wen C-Y, Chen LC, Yu Y-C, Wang C-W, Lin E-K.  2000.  Effect of hydrogen addition on SiCN films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor. J. Mater. Chem.. 10:783-787.
Chang, CY, Lan TW, Chi GC, Chen* LC, Chen KH, Chen JJ, Jang S, Ren F, Pearton SJ.  2006.  Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires. Electrochemical and Solid-State Lett.. 9:G155-G157.
Ciao-WeiYang, Chin-ChangChen, Chen K-H, SoofinCheng.  2017.  Effect of pore-directing agents in SBA-15 nanoparticles on the performance of Nafion®/SBA-15n composite membranes for DMFC. Journal of Membrane Science. 526:106-117.
Fang*, WC, Leu MS, Chen KH, Chen LC, Huang JH.  2007.  Effect of structural morphology on electrochemical properties of carbon nanotubes directly grown on Ti foil. Electrochemical and Solid-State Lett.. 10:K60-K62.
Das, D, Raha D, Chen WC, Chen KH, Wu CT, Chen LC.  2012.  Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4plasma at low temperature. J. Mater. Res.. 27:1303.
Bhusari, DM, Yang JR, Wang TY, Chen KH, Lin ST, Chen LC.  1998.  Effect of Substrate Pretreatment and Methane Fraction on the Optical Transparency of Nano-crystalline Diamond Thin Films. J. Mater. Res.. 13:1769.
Chou, CT, Tang WL, Lin CH, Liu CH, Chen LC, Chen KH.  2012.  Effect of substrate temperature on orientation of subphthalocyanine molecule in organic photovoltaic cells. Thin Solid Films. 520:2289-2292.
Kuo, CT, Chen LC, Chen KH, Chen TM, Lu TR.  1999.  Effect of target materials on crystalline carbon nitride films preparation by ion beam sputtering. Diamond & Related Materials. 8:1724-1729.
Kuo, CT, Chen LC, Chen KH, Chen TM, Lu TR.  1999.  Effect of Target Materials on Crystalline Carbon Nitride Films Preparation by Ion Beam Sputtering. Diamond & Related Materials. 8:1724.
Fang, WC, Huang* JH, Chen LC, Su OYL, Chen KH.  2006.  Effect of temperature annealing on capacitive and structural properties of hydrous ruthenium oxides. J. Power Sources . 160:1506-1510.
Huang, BR, Jou S, Wu YM, Chen KH, Chen LC.  2010.  Effect of XeF laser treatment on structure of nanocrystalline diamond films. Diamond & Relat. Mater.. 19:445.
Chang, CC, Lin CF, Chiou JM, Ho TH, Tai Y, Lee JH, Chen YF, Wang JK, Chen LC, Chen* KH.  2010.  Effects of cathode buffer layers on the efficiency of bulk-heterojunction solar cells. Appl. Phys. Lett.. 96:263506.
Juan, CP, Tsai CC, Chen KH, Chen LC, Cheng HC.  2005.  Effects of high-density oxygen plasma post-treatment on field emission properties of carbon nanotube field-emission displays. Jpn. J. Appl. Phys.. 44:8231-8236.
Lin, YG, Hsu YK, Yang JL, Chen SY, Chen* KH, Chen LC.  2009.  Effects of nitrogen-doping on the microstructure, bonding and electrochemical activity of carbon nanotubes. Diamond Relat. Mater.. 18:433-437.
Y.K.Lin, Su YH, Huang YH, Hsu CH, Lin YG, Hsu YK, Chen LC, Chen KH.  2009.  Efficient hydrogen production using Cu-based catalysts prepared via homogeneous precipitation. J. Mater. Chem.. 19:9186-9194.
Philip, J, Hess* P, Feygelson T, Butler JE, Chattopadhyay S, Chen KH, Chen LC.  2003.  Elastic, mechanical, and thermal properties of nanocrystalline diamond films. J. Appl. Phys.. 93:2164-2171.
Huang, BR, Huang CS, Wu CC, Chen LC, Chen KH.  2004.  Electrical properties of annealed MPCVD grown vertically aligned carbon nanotubes films. Diamond & Related Materials. 13:2156-2159.
Chang, CY, Chi GC, Wang WM, Chen* LC, Chen KH, Ren F, Pearton SJ.  2006.  Electrical transport properties of single GaN and InN nanowires. J. Electronic Materials. 35:738-743.
Das*, D, Jana M, Barua AK, Chattopadhyay S, Chen LC, Chen KH.  2002.  Electrical, thermal and structural properties of microcrystalline Si thin films. Jpn.Appl. Phys. Lett.. 41:L229-232.