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A
Chen, CW, Chen* KH, Shen CH, Wu JJ, Pong WF, Ganguly A, Chen LC.  2006.  Anomalous energy shift of emission spectra of ZnO nanorods with sizes beyond quantum confinement regime. Appl. Phys. Lett.. 88:241905-(1-3).
Liu, YL, Hsu CW, Dhara S, Chang CW, Tsai HM, Chen LC, Chen KH, Pong* WF, Chi GC.  2013.  Atomistic nucleation sites of Pt nanoparticles on N-doped carbon nanotubes. Nanoscale. 5:6812-6818.
B
Chang, CK, Kataria S, Kuo CC, Ganguli A, Wang BY, Hwang JY, Huang KJ, Yang WH, Wang SB, Chuang CH, Chen M, Huang CI, Pong WF, Song KJ, Chang SJ, Guo J, Tai Y, Tsujimoto M, Isoda S, Chen CW, Chen LC, Chen KH.  2013.  Band gap engineering of chemical vapor deposited graphene by in-situ BN doping. ACS Nano. 7:1333-1341.
Shelke, AR, Wang H-T, Chiou J-W, Shown I, Sabbah A, Chen K-H, Teng S-A, Lin I-A, Lee C-C, Hsueh H-C, Liang Y-H, Du C-H, Yadav PL, Ray SC, Hsieh S-H, Pao C-W, Tsai H-M, Chen C-H, Chen K-H, Chen L-C, Pong W-F.  2022.  Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement. Small. n/a:2105076., Number n/a AbstractWebsite

Abstract Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2. Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2.

Dhara*, S, Chandra S, Magudapathy P, Kalavathi S, Panigrahi BK, Nair KGM, Sastry VS, Hsu CW, Wu CT, Chen KH, Chen LC.  2004.  Blue luminescence of Au nanoclusters embedded in silica matrix. J. Chem. Phys.. 121:12595-12599.
C
Shown, I, Samireddi S, Chang Y-C, Putikam R, Chang P-H, Sabbah A, Fu F-Y, Chen W-F, Wu C-I, Yu T-Y, Chung P-W, Lin MC, Chen L-C, Chen K-H.  2018.  Carbon-doped SnS2 nanostructure as a high-efficiency solar fuel catalyst under visible light, 2018. Nature Communications. 9(1):169. AbstractWebsite

Photocatalytic formation of hydrocarbons using solar energy via artificial photosynthesis is a highly desirable renewable-energy source for replacing conventional fossil fuels. Using an l-cysteine-based hydrothermal process, here we synthesize a carbon-doped SnS2 (SnS2-C) metal dichalcogenide nanostructure, which exhibits a highly active and selective photocatalytic conversion of CO2 to hydrocarbons under visible-light. The interstitial carbon doping induced microstrain in the SnS2 lattice, resulting in different photophysical properties as compared with undoped SnS2. This SnS2-C photocatalyst significantly enhances the CO2 reduction activity under visible light, attaining a photochemical quantum efficiency of above 0.7%. The SnS2-C photocatalyst represents an important contribution towards high quantum efficiency artificial photosynthesis based on gas phase photocatalytic CO2 reduction under visible light, where the in situ carbon-doped SnS2 nanostructure improves the stability and the light harvesting and charge separation efficiency, and significantly enhances the photocatalytic activity.

Chen*, C-C, Yeh C-C, Chen CH, Yu MY, Liu HL, Wu JJ, Chen KH, Chen LC, Peng JY, Chen YF.  2001.  Catalytic growth and characterization of gallium nitride nanowires. J. Am. Chem. Soc.. 123:2791-2798.
Ray, SC, Pao CW, Tsai HM, Chiou JW, Pong* WF, Chen CW, Tsai M-H, Papakonstantinou P, Chen LC, Chen KH.  2007.  A comparative study of the electronic structures of oxygen- and chlorinetreated nitrogenated carbon nanotubes by X-ray absorption and scanning photoelectron microscopy. Appl. Phys. Lett.. 91:202102.
W.Chiou, J, Tsai HM, Pao CW, Dong* CL, Chang CL, Chien FZ, Pong WF, Tsai M-H, Shi SC, Chen CF, Chen LC, Chen KH, Hong I-H, Chen C-H, Lin H-J, Guo JH.  2005.  Comparison of the electronic structures of AlN nanotips grown on p- and n-type Si substrates. J. Phys.: Condens. Matter. 17:7523-7530.
Kamal Hussien, M, Sabbah A, Qorbani M, Putikam R, Kholimatussadiah S, Tzou D-LM, Hammad Elsayed M, Lu Y-J, Wang Y-Y, Lee X-H, Lin T-Y, Thang NQ, Wu H-L, Haw S-C, Wu KC-W, Lin M-C, Chen K-H, Chen L-C.  2024.  Constructing B─N─P Bonds in Ultrathin Holey g-C3N4 for Regulating the Local Chemical Environment in Photocatalytic CO2 Reduction to CO, 2024. Small. n/a(n/a):2400724.: John Wiley & Sons, Ltd AbstractWebsite

Abstract The lack of intrinsic active sites for photocatalytic CO2 reduction reaction (CO2RR) and fast recombination rate of charge carriers are the main obstacles to achieving high photocatalytic activity. In this work, a novel phosphorus and boron binary-doped graphitic carbon nitride, highly porous material that exhibits powerful photocatalytic CO2 reduction activity, specifically toward selective CO generation, is disclosed. The coexistence of Lewis-acidic and Lewis-basic sites plays a key role in tuning the electronic structure, promoting charge distribution, extending light-harvesting ability, and promoting dissociation of excitons into active carriers. Porosity and dual dopants create local chemical environments that activate the pyridinic nitrogen atom between the phosphorus and boron atoms on the exposed surface, enabling it to function as an active site for CO2RR. The P?N?B triad is found to lower the activation barrier for reduction of CO2 by stabilizing the COOH reaction intermediate and altering the rate-determining step. As a result, CO yield increased to 22.45 µmol g?1 h?1 under visible light irradiation, which is ≈12 times larger than that of pristine graphitic carbon nitride. This study provides insights into the mechanism of charge carrier dynamics and active site determination, contributing to the understanding of the photocatalytic CO2RR mechanism.

Chang, CY, Pearton* SJ, Huang PJ, G.C. Chi H, Wang T, Chen JJ, Ren F, Chen KH, Chen LC.  2007.  Control of nucleation site density of GaN nanowires. Appl. Surf. Sci.. 253:3196-3200.
E
Chang, CY, Lan TW, Chi GC, Chen* LC, Chen KH, Chen JJ, Jang S, Ren F, Pearton SJ.  2006.  Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires. Electrochemical and Solid-State Lett.. 9:G155-G157.
Philip, J, Hess* P, Feygelson T, Butler JE, Chattopadhyay S, Chen KH, Chen LC.  2003.  Elastic, mechanical, and thermal properties of nanocrystalline diamond films. J. Appl. Phys.. 93:2164-2171.
Chang, CY, Chi GC, Wang WM, Chen* LC, Chen KH, Ren F, Pearton SJ.  2006.  Electrical transport properties of single GaN and InN nanowires. J. Electronic Materials. 35:738-743.
Chen, TT, Hsieh YP, Wei CM, Chen* YF, Chen LC, Chen KH, Peng YH, Kuan CH.  2008.  Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures. Nanotechnology. 19:365705.
Chang, CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton* SJ, Chen KH, Chen LC.  2006.  Electroluminescence from ZnO nanowire/polymer composite p-n junction. Appl. Phys. Lett.. 88:173503-(1-3).
Pimenov, SM, Frolov VD, Zavedeev EV, Abanshin NP, Du HY, Chen WC, Chen LC, Wu JJ, Chen KH.  2011.  Electron field emission properties of highly dense carbonnanotube arrays. Appl. Phys. A. 105:11.
Pong, WF, Chang YK, Hsieh HH, Tsai MH, Lee KH, Dann TE, Chien FZ, Tseng PK, Tsang KL, Su WK, Chen LC, Wei SL, Chen KH, Bhusari DM, Chen YF.  1998.  Electronic and Atomic Structures of Si-C-N Thin Film by X-ray-absorption Spectroscopy. J. Electron Spectroscopy and Related Pheno.. 92:115.
Chang, YK, Hsieh HH, Pong WF, Tsai MH, Lee KH, Dann TE, Chien FZ, Tseng PK, Tsang KL, Su WK, Chen LC, Wei SL, Chen KH, Bhusari DM, Chen YF.  1998.  Electronic and Atomic Structures of SiCN Thin Film by X-ray Absorption Spectroscopy and Theoretical Calculations. Phys. Rev.. B58:9018.
and H.M. Tsai, Jan CJ, Chiou JW, Pong* WF, Chen KH, et al.  2001.  Electronic and bonding structures of amorphous Si-C-N thin films by X-ray-absorption spectroscopy. Appl. Phys. Lett.. 79:2393-2395.
Ray, SC, Tsai HM, Bao CW, Chiou JW, Jan JC, Kumar K, Pong* WF, Tsai M-H, Chattopadhyay S, Chen LC, Chien SC, Lee MT, Lin ST, Chen KH.  2004.  Electronic and bonding structures of B-C-N thin films by X-ray absorption and photoemission spectroscopy. J. Appl. Phys. . 96:208-211.
Chiou, JW, Yueh CL, Jan JC, Tsai HM, Pong* WF, Hong IH, Klauser R, Tsai MH, Chang YK, Chen YY, Wu CT, Chen KH, Wei SL, Wen CY, Chen LC, Chuang TJ.  2002.  Electronic structure at the carbon nanotube tips studied by X-ray-absorption spectroscopy and scanning photoelectron microscopy. Appl. Phys. Lett.. 81:4189-4191.
Chiou, JW, Jan JC, Tsai HM, Pong* WF, Tsai MH, Hong IH, Klauser R, Lee JF, Hsu CW, Lin HM, Chen CC, Shen CH, Chen LC, Chen KH.  2003.  Electronic structure of GaN nanowire studied by X-ray-absorption spectroscopy and scanning photoelectron microscopy. Appl. Phys. Lett.. 82:3949-3951.
Pao, CW, Babu PD, Tsai HM, Chiou JW, Ray SC, Yang SC, Chien FZ, Pong* WF, Tsai M-H, Hsu CW, Chen LC, Chen KH, Lin H-J, Lee JF, Guo JH.  2006.  Electronic structure of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy. Appl. Phys. Lett.. 88:223113-(1-3).
Yeh, CL, Jan CJ, Chiou JW, Pong* WF, Tsai MH, Chang YK, Chen YY, Lee JF, Tseng PK, Wei SL, Wen CY, Chen LC, Chen KH.  2001.  Electronic structure of the Fe-layer catalyzed carbon nanotubes studies by X-ray-absorption spectroscopy. Appl. Phys. Lett.. 79:3179-3181.