Band gap engineering of chemical vapor deposited graphene by in-situ BN doping

Citation:
Chang, CK, Kataria S, Kuo CC, Ganguli A, Wang BY, Hwang JY, Huang KJ, Yang WH, Wang SB, Chuang CH, Chen M, Huang CI, Pong WF, Song KJ, Chang SJ, Guo J, Tai Y, Tsujimoto M, Isoda S, Chen CW, Chen LC, Chen KH.  2013.  Band gap engineering of chemical vapor deposited graphene by in-situ BN doping. ACS Nano. 7:1333-1341.