Publications

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2023
Holbrook, M, Chen Y, Kim H, Frammolino L, Liu M, Pan C-R, Chou M-Y, Zhang C, Shih C-K.  2023.  Creating a Nanoscale Lateral Junction in a Semiconductor Monolayer with a Large Built-in Potential. ACS NANO. 17:6966-6972. AbstractWebsite

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2022
Hsu, W-T, Quan J, Pan C-R, Chen P-J, Chou M-Y, Chang W-H, MacDonald AH, Li X, Lin J-F, Shih C-K*.  2022.  Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2. Phys. Rev. B. 106:125302. AbstractWebsite

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2021
Siao, M-D, Lin Y-C, He T, Tsai M-Y, Lee K-Y, Chang S-Y, Lin K-I, Lin Y-F, Chou M-Y, Suenaga K, Chiu P-W.  2021.  Embedment of Multiple Transition Metal Impurities into WS2 Monolayer for Bandstructure Modulation. Small. 17:2007171., Number 17 AbstractWebsite

Abstract Band structure by design in 2D layered semiconductors is highly desirable, with the goal to acquire the electronic properties of interest through the engineering of chemical composition, structure, defect, stacking, or doping. For atomically thin transition metal dichalcogenides, substitutional doping with more than one single type of transition metals is the task for which no feasible approach is proposed. Here, the growth of WS2 monolayer is shown codoped with multiple kinds of transition metal impurities via chemical vapor deposition controlled in a diffusion-limited mode. Multielement embedment of Cr, Fe, Nb, and Mo into the host lattice is exemplified. Abundant impurity states thus generate in the bandgap of the resultant WS2 and provide a robust switch of charging/discharging states upon sweep of an electric filed. A profound memory window exists in the transfer curves of doped WS2 field-effect transistors, forming the basis of binary states for robust nonvolatile memory. The doping technique presented in this work brings one step closer to the rational design of 2D semiconductors with desired electronic properties.

Zhang, H, Holbrook M, Cheng F, Nam H, Liu M, Pan C-R, West D, Zhang S, Chou M-Y, Shih C-K.  2021.  Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO. ACS Nano. 15:2497-2505., Number 2 AbstractWebsite
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2020
Pan, C-R, Lee W, Shih C-K, Chou MY.  2020.  Coherently coupled quantum-well states in bimetallic Pb/Ag thin films, Sep. Phys. Rev. B. 102:115428.: American Physical Society AbstractWebsite
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Lee, W, Pan C-R, Nam H, Chou M-Y, Shih C-K.  2020.  Critical role of parallel momentum in quantum well state couplings in multi-stacked nanofilms: An angle resolved photoemission study, 2020. AIP AdvancesAIP Advances. 10(12):125211.: American Institute of Physics AbstractWebsite
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2019
Wong, DP, Aminzare M, Chou T-L, Pang C-S, Liu Y-ren, Shen T-H, Chang BK, Lien H-T, Chang S-T, Chien C-H, Chen Y-Y, Chu M-W, Yang Y-W, Hsieh W-P, Rogl G, Rogl P, Kakefuda Y, Mori T, Chou M-Y, Chen L-C, Chen K-H.  2019.  Origin of Band Modulation in GeTe-Rich Ge–Sb–Te Thin Film. ACS Applied Electronic Materials. 1:2619-2625., Number 12 AbstractWebsite
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Yeh, C-H, Chen H-C, Lin H-C, Lin Y-C, Liang Z-Y, Chou M-Y, Suenaga K, Chiu P-W.  2019.  Ultrafast Monolayer In/Gr-WS2-Gr Hybrid Photodetectors with High Gain. ACS Nano. 13:3269-3279., Number 3 AbstractWebsite
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2018
Chen, P, Pai WW, Chan Y-H, Sun W-L, Xu C-Z, Lin D-S, Chou MY, Fedorov A-V, Chiang T-C.  2018.  Large quantum-spin-Hall gap in single-layer 1T′ WSe2, 2018. 9(1):2003. AbstractWebsite

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T′ structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T′ layer and an in-gap edge state located near the layer boundary. The system′s 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator–semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.

Zhang, Q, Yu J, Ebert P, Zhang C, Pan C-R, Chou M-Y, Shih C-K, Zeng C, Yuan S.  2018.  Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns, 2018. ACS NanoACS Nano. 12(9):9355-9362.: American Chemical Society AbstractWebsite
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Lin, Y-C, Yeh C-H, Lin H-C, Siao M-D, Liu Z, Nakajima H, Okazaki T, Chou M-Y, Suenaga K, Chiu P-W.  2018.  Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures. ACS Nano. 12:12080-12088., Number 12 AbstractWebsite
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2017
Zhang, D, Ha J, Baek H, Chan Y-H, Natterer FD, Myers AF, Schumacher JD, Cullen WG, Davydov AV, Kuk Y, Chou MY, Zhitenev NB, Stroscio JA.  2017.  Strain Engineering a 4a×√3a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe2, Jul. Phys. Rev. Materials. 1:024005.: American Physical Society AbstractWebsite
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Zhang, C, Chuu C-P, Ren X, Li M-Y, Li L-J, Jin C, Chou MY, Shih C-K.  2017.  Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS2/WSe2 Hetero-bilayers. Science Advances.
Tsai, Y, Chu Z, Han Y, Chuu C-P, Wu D, Johnson A, Cheng F, Chou M-Y, Muller DA, Li X, Lai K, Shih C-K.  2017.  Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement. Advanced Materials. :1703680–n/a. AbstractWebsite

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Nunna, R, Qiu P, Yin M, Chen H, Hanus R, Song Q, Zhang T, Chou M-Y, Agne MT, He J, Snyder JG, Shi X, Chen L.  2017.  Ultrahigh thermoelectric performance in Cu2Se-based hybrid materials with highly dispersed molecular CNTs. Energy Environ. Sci.. 10:1928-1935.: The Royal Society of Chemistry AbstractWebsite

Here{,} by utilizing the special interaction between metal Cu and multi-walled carbon nanotubes (CNTs){,} we have successfully realized the in situ growth of Cu2Se on the surface of CNTs and then fabricated a series of Cu2Se/CNT hybrid materials. Due to the high degree of homogeneously dispersed molecular CNTs inside the Cu2Se matrix{,} a record-high thermoelectric figure of merit zT of 2.4 at 1000 K has been achieved.

2016
Zhang, Q, Chen Y, Zhang C, Pan C-R, Chou MY, Zeng C, Shih C-K.  2016.  Band gap renormalization and work function modulation in MoSe2/hBN/Ru(0001) heterostructures. Nature Communications. 7(13843)
Chan, Y-H, Chiu C-K, Chou MY, Schnyder AP.  2016.  Ca3P2 and other topological semimetals with line nodes and drumhead surface states. PHYSICAL REVIEW B. 93(20):205132/1-16.
Feng, B, Chan Y-H, Feng Y, Liu R-Y, Chou MY, Kuroda K, Yaji K, Harasawa A, Moras P, Barinov A, Malaeb WG, Bareille C, Kondo T, Shin S, Komori F, Chiang T-C, Shi Y, Matsuda I.  2016.  Spin Texture in Type II Weyl Semimetal WTe2. PHYSICAL REVIEW B. 94(19):195134.
2015
Chiu, M-H, Zhang C, Shiu H-W, Chuu C-P, Chen C-H, Chang C-YS, Chen C-H, Chou M-Y, Shih C-K, Li L-J.  2015.  Determination of band alignment in the single-layer MoS2/WSe2 heterojunction. Nature Communications. 6 Abstract
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Natterer, FD, Zhao Y, Wyrick J, Chan Y-H, Ruan W-Y, Chou M-Y, Watanabe K, Taniguchi T, Zhitenev NB, Stroscio JA.  2015.  Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons. Physical Review Letters. 114, Number 24 Abstract
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2014
Weng, SC, Xu RQ, Said AH, Leu BM, Ding Y, Hong H, Fang XY, Chou MY, Bosak A, Abbamonte P, Cooper SL, Fradkin E, Chang SL, Chiang TC.  2014.  Pressure-induced antiferrodistortive phase transition in SrTiO3: Common scaling of soft-mode with pressure and temperature. Epl. 107:5. AbstractWebsite
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2013
Kim, J, Zhang C, Kim J, Gao H, Chou M-Y, Shih C-K.  2013.  Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111). Physical Review B. 87, Number 24 Abstract
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Yan, J-A, Stein R, Schaefer DM, Wang X-Q, Chou MY.  2013.  Electron-phonon coupling in two-dimensional silicene and germanene. Physical Review B. 88, Number 12 Abstract
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2012
Sun, YY, Ruan WY, Gao XF, Bang J, Kim YH, Lee K, West D, Liu X, Chan TL, Chou MY, Zhang SB.  2012.  Phase diagram of graphene nanoribbons and band-gap bifurcation of Dirac fermions under quantum confinement, May. Physical Review B. 85:5., Number 19 AbstractWebsite

A p-T phase diagram of graphene nanoribbons (GNRs) terminated by hydrogen atoms is established based on first-principles calculations, where the stable phase at standard conditions (25 degrees C and 1 bar) is found to be a zigzag GNR (zzGNR). The stability of this new GNR is understood based on an electron-counting model, which predicts semiconducting nonmagnetic zzGNRs. Quantum confinement of Dirac fermions in the stable zzGNRs is found to be qualitatively different from that in ordinary semiconductors. Bifurcation of the band gap is predicted to take place, leading to the formation of polymorphs with distinct band gaps but equal thermodynamic stability. A tight-binding model analysis reveals the role of edge symmetry on the band-gap bifurcation.

2011
Wang, Y, Zhang F, Stumpf R, Lin P, Chou MY.  2011.  Catalytic effect of near-surface alloying on hydrogen interaction on the aluminum surface, May. Physical Review B. 83:5., Number 19 AbstractWebsite

A small amount of catalyst, such as Ti, was found to greatly improve the kinetics of hydrogen reactions in the prototypical hydrogen storage compound sodium alanate (NaAlH(4)). We propose a near-surface alloying mechanism for the rehydrogenation cycle based on a detailed analysis of available experimental data as well as first-principles calculations. The calculated results indicate that the catalyst remains at subsurface sites near the Al surface, reducing the dissociation energy barrier of H(2). The binding between Ti and Al modifies the surface charge distribution, which facilitates hydrogen adsorption and enhances hydrogen mobility on the surface.