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and T. N. Arunagiri, Zhang Y, Chyan* O, El-Bounani M, Kim MJ, Wu CT, Chen LC, Chen KH.  2005.  A 5 nm ruthenium thin film as a directly plate-able copper diffusion barrier. Appl. Phys. Lett.. 86:083104-(1-3).
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Qorbani, M, Sabbah A, Lai Y-R, Kholimatussadiah S, Quadir S, Huang C-Y, Shown I, Huang Y-F, Hayashi M, Chen K-H, Chen L-C.  2022.  Atomistic insights into highly active reconstructed edges of monolayer 2H-WSe2 photocatalyst, 2022. Nature Communications. 13(1):1256. AbstractWebsite

Ascertaining the function of in-plane intrinsic defects and edge atoms is necessary for developing efficient low-dimensional photocatalysts. We report the wireless photocatalytic CO2 reduction to CH4 over reconstructed edge atoms of monolayer 2H-WSe2 artificial leaves. Our first-principles calculations demonstrate that reconstructed and imperfect edge configurations enable CO2 binding to form linear and bent molecules. Experimental results show that the solar-to-fuel quantum efficiency is a reciprocal function of the flake size. It also indicates that the consumed electron rate per edge atom is two orders of magnitude larger than the in-plane intrinsic defects. Further, nanoscale redox mapping at the monolayer WSe2–liquid interface confirms that the edge is the most preferred region for charge transfer. Our results pave the way for designing a new class of monolayer transition metal dichalcogenides with reconstructed edges as a non-precious co-catalyst for wired or wireless hydrogen evolution or CO2 reduction reactions.

Sabhapathy, P, Raghunath P, Sabbah A, Shown I, Bayikadi KS, Xie R-K, Krishnamoorthy V, Lin M-C, Chen K-H, Chen L-C.  2023.  Axial Chlorine Induced Electron Delocalization in Atomically Dispersed FeN4 Electrocatalyst for Oxygen Reduction Reaction with Improved Hydrogen Peroxide Tolerance, 2023. Small. :2303598.: John Wiley & Sons, Ltd AbstractWebsite

Abstract Atomically dispersed iron sites on nitrogen-doped carbon (Fe-NC) are the most active Pt-group-metal-free catalysts for oxygen reduction reaction (ORR). However, due to oxidative corrosion and the Fenton reaction, Fe-NC catalysts are insufficiently active and stable. Herein, w e demonstrated that the axial Cl-modified Fe-NC (Cl-Fe-NC) electrocatalyst is active and stable for the ORR in acidic conditions with high H2O2 tolerance. The Cl-Fe-NC exhibits excellent ORR activity, with a high half-wave potential (E1/2) of 0.82 V versus a reversible hydrogen electrode (RHE), comparable to Pt/C (E1/2 = 0.85 V versus RHE) and better than Fe-NC (E1/2 = 0.79 V versus RHE). X-ray absorption spectroscopy analysis confirms that chlorine is axially integrated into the FeN4. More interestingly, compared to Fe-NC, the Fenton reaction is markedly suppressed in Cl-Fe-NC. In situ electrochemical impedance spectroscopy reveals that Cl-Fe-NC provides efficient electron transfer and faster reaction kinetics than Fe-NC. Density functional theory calculations reveal that incorporating Cl into FeN4 can drive the electron density delocalization of the FeN4 site, leading to a moderate adsorption free energy of OH* (?GOH*), d-band center, and a high onset potential, and promotes the direct four-electron-transfer ORR with weak H2O2 binding ability compared to Cl-free FeN4, indicating superior intrinsic ORR activity.

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Chang, CK, Kataria S, Kuo CC, Ganguli A, Wang BY, Hwang JY, Huang KJ, Yang WH, Wang SB, Chuang CH, Chen M, Huang CI, Pong WF, Song KJ, Chang SJ, Guo J, Tai Y, Tsujimoto M, Isoda S, Chen CW, Chen LC, Chen KH.  2013.  Band gap engineering of chemical vapor deposited graphene by in-situ BN doping. ACS Nano. 7:1333-1341.
Dhara*, S, Chandra S, Magudapathy P, Kalavathi S, Panigrahi BK, Nair KGM, Sastry VS, Hsu CW, Wu CT, Chen KH, Chen LC.  2004.  Blue luminescence of Au nanoclusters embedded in silica matrix. J. Chem. Phys.. 121:12595-12599.
Jarwal, B, Abbas S, Chou T-L, Vailyaveettil SM, Kumar A, Quadir S, Ho T-T, Wong DP, Chen L-C, Chen K-H.  2024.  Boosting Thermoelectric Performance in Nanocrystalline Ternary Skutterudite Thin Films through Metallic CoTe2 Integration, 2024. ACS Applied Materials & InterfacesACS Applied Materials & Interfaces. 16(12):14770-14780.: American Chemical Society AbstractWebsite
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Chen, KH, Wu JJ, Chen LC, Wen C-Y, Kichambare PD, Tarntair FG, Kuo PF, Chang SW, Chen YF.  2000.  Comparative studies in field emission properties of carbon-based materials. Diamond & Related Materials. 9:1249-1256.
Kamal Hussien, M, Sabbah A, Qorbani M, Putikam R, Kholimatussadiah S, Tzou D-LM, Hammad Elsayed M, Lu Y-J, Wang Y-Y, Lee X-H, Lin T-Y, Thang NQ, Wu H-L, Haw S-C, Wu KC-W, Lin M-C, Chen K-H, Chen L-C.  2024.  Constructing B─N─P Bonds in Ultrathin Holey g-C3N4 for Regulating the Local Chemical Environment in Photocatalytic CO2 Reduction to CO, 2024. Small. n/a(n/a):2400724.: John Wiley & Sons, Ltd AbstractWebsite

Abstract The lack of intrinsic active sites for photocatalytic CO2 reduction reaction (CO2RR) and fast recombination rate of charge carriers are the main obstacles to achieving high photocatalytic activity. In this work, a novel phosphorus and boron binary-doped graphitic carbon nitride, highly porous material that exhibits powerful photocatalytic CO2 reduction activity, specifically toward selective CO generation, is disclosed. The coexistence of Lewis-acidic and Lewis-basic sites plays a key role in tuning the electronic structure, promoting charge distribution, extending light-harvesting ability, and promoting dissociation of excitons into active carriers. Porosity and dual dopants create local chemical environments that activate the pyridinic nitrogen atom between the phosphorus and boron atoms on the exposed surface, enabling it to function as an active site for CO2RR. The P?N?B triad is found to lower the activation barrier for reduction of CO2 by stabilizing the COOH reaction intermediate and altering the rate-determining step. As a result, CO yield increased to 22.45 µmol g?1 h?1 under visible light irradiation, which is ≈12 times larger than that of pristine graphitic carbon nitride. This study provides insights into the mechanism of charge carrier dynamics and active site determination, contributing to the understanding of the photocatalytic CO2RR mechanism.

Chen, LC, Chen KH, Wei SL, Kichambare PD, Wu JJ, Lu TR, Kuo CT.  1999.  Crystalline SiCN: ahard material rivals to cubic BN. Thin Solid Films. 355:112-116.
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Wu, JJ, Wu CT, Liao YC, Lu TR, Chen LC, Chen KH, Hwa LG, Kuo CT, Ling KJ.  1999.  Deposition of silicon carbon nitride by ion-beam sputtering. Thin Solid Films. 355:417-422.
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Kuo, CT, Chen LC, Chen KH, Chen TM, Lu TR.  1999.  Effect of target materials on crystalline carbon nitride films preparation by ion beam sputtering. Diamond & Related Materials. 8:1724-1729.
Kuo, CT, Chen LC, Chen KH, Chen TM, Lu TR.  1999.  Effect of Target Materials on Crystalline Carbon Nitride Films Preparation by Ion Beam Sputtering. Diamond & Related Materials. 8:1724.
Krishnamoorthy, V, Bangolla HK, Chen C-Y, Huang Y-T, Cheng C-M, Ulaganathan RK, Sankar R, Lee K-Y, Du H-Y, Chen L-C, Chen K-H, Chen R-S.  2024.  Efficient Hydrogen Evolution Reaction in 2H-MoS2 Basal Planes Enhanced by Surface Electron Accumulation, 2024. Catalysts. 14(1) Abstract

An innovative strategy has been developed to activate the basal planes in molybdenum disulfide (MoS2) to improve their electrocatalytic activity by controlling surface electron accumulation (SEA) through aging, annealing, and nitrogen-plasma treatments. The optimal hydrogen evolution reaction (HER) performance was obtained on the surface treated with nitrogen-plasma for 120 s. An overpotential of 0.20 V and a Tafel slope of 120 mV dec−1 were achieved for the optimized condition. The angle-resolved photoemission spectroscopy measurement confirmed the HER efficiency enhanced by the SEA conjugated with the sulfur vacancy active sites in the MoS2 basal planes. This study provides new insight into optimizing MoS2 catalysts for energy applications.

Chen, TT, Hsieh YP, Wei CM, Chen* YF, Chen LC, Chen KH, Peng YH, Kuan CH.  2008.  Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures. Nanotechnology. 19:365705.
Ray, SC, Tsai HM, Bao CW, Chiou JW, Jan JC, Kumar K, Pong* WF, Tsai M-H, Chattopadhyay S, Chen LC, Chien SC, Lee MT, Lin ST, Chen KH.  2004.  Electronic and bonding structures of B-C-N thin films by X-ray absorption and photoemission spectroscopy. J. Appl. Phys. . 96:208-211.
Chiou, JW, Yueh CL, Jan JC, Tsai HM, Pong* WF, Hong IH, Klauser R, Tsai MH, Chang YK, Chen YY, Wu CT, Chen KH, Wei SL, Wen CY, Chen LC, Chuang TJ.  2002.  Electronic structure at the carbon nanotube tips studied by X-ray-absorption spectroscopy and scanning photoelectron microscopy. Appl. Phys. Lett.. 81:4189-4191.
Chiou, JW, Jan JC, Tsai HM, Pong* WF, Tsai MH, Hong IH, Klauser R, Lee JF, Hsu CW, Lin HM, Chen CC, Shen CH, Chen LC, Chen KH.  2003.  Electronic structure of GaN nanowire studied by X-ray-absorption spectroscopy and scanning photoelectron microscopy. Appl. Phys. Lett.. 82:3949-3951.
Kan, MC, Huang* JL, Sung JC, Chen KH, Lii DF.  2003.  Enhanced field emission from nitrogen-doped amorphous diamond. J. Mater. Res.. 18:1594-1599.
Kichambare, PD, Tarntair FG, Wang TY, Chen LC, Chen KH, Cheng HC.  1999.  Enhancement in Field Emission of Silicon Micro-tips by Bias-assisted Carburization. the Appl. Diamond Conference and Frontier Carbon Tech. Joint Conference 1999. :353-358., Tsukuba, Japan
Kichambare, PD, Tarntair FG, Wang TY, Chen LC, Chen KH, Cheng HC.  2000.  Enhancement in field emission of silicon microtips by bias-assisted carburization. J. Vac. Sci. Tech.. B18:2722-2729.
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Dhara*, S, Sundaravel B, Nair KGM, Kesavamoorthy R, Valsakumar MC, Rao CTV, Chen LC, Chen KH.  2006.  Ferromagnetism in cobalt doped n-GaN. Appl. Phys. Lett.. 88:173110-(1-3).
Chen*, LC, Hong WK, Tarntair FG, Chen KJ, Lin JB, Kichambare PD, Cheng HC, Chen KH.  2001.  Field electron emission from C-based emitters and devices. New Diamond and Frontier Carbon Technology. 11:249-263.
Chen*, LC, Hong WK, Tarntair FG, Chen KJ, Lin JB, Kichambare PD, Cheng HC, Chen KH.  2001.  Field electron emission from carbon-based emitters and devices. New Diamond and Frontier Carbon Tech.. 11:249.
Kan, MC, Huang* JL, Sung J, Lii DF, Chen KH.  2003.  Field emission characteristics of amorphous diamond. J. Am. Cherem. Soc.. 86:1513-1517.