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Photoelectron-diffraction studies of Nb(001) have been performed to determine the first-interlayer contraction using Mg K alpha radiation (h nu = 1253.6 eV) as an excitation source. Photoemission intensities of the 3d(5/2) core level were measured as a function of the polar angle along several azimuths on the single-crystal surface. The 202.3-eV (205.0-eV) binding energy for the 3d(5/2) (3d(3/2)) core level was well resolved in the photoemission spectra, where the peak intensity could be easily evaluated by curve-fitting processes. Large oscillations of the 3d(5/2) intensity as a function of the polar angle due to forward-focusing were observed. Based on multiple-scattering calculations for several first-interlayer spacings ranging from the bulk value to 16% contraction, the best agreement with experiment was obtained for a (13 +/- 5)% contraction of the first-interlayer spacing.

We report calculations of the dissociative adsorption of H-2 at Pd (100) covered with 1/4 monolayer of sulfur using quantum dynamics as well as molecular dynamics and taking all six degrees of freedom of the two H atoms fully into account. The ab-initio potential-energy surface (PES) is found to be very strongly corrugated. In particular, we discuss the influence of tunneling, zero-point vibrations due to the localization of the wave function of the nuclei when narrow valleys of the PES are passed, steering of the approaching H-2 molecules towards low-energy barrier configurations, and the important role of subsurface absorbates for the hydrogen dissociation. It is shown that "established" concepts derived from low-dimensional dynamical studies are not necessarily valid in a high-dimensional treatment. (C) 1998 Elsevier Science B.V. All rights reserved.

When disilane (Si2H6) is used in the homoepitaxial growth of Si by chemical vapor deposition (CVD), the fragment SiH2 is believed to be the basic unit adsorbed on the surface. The bonding site of SiH2 on Si(100) has been proposed in the literature to be either on top of a dimer (the on-dimer site) or between two dimers in the same row (the intrarow site). Since the pathway of SiH2 combination is dependent on the adsorption site, a first-principles calculation will shed light on the underlying process. We have performed self-consistent pseudopotential density-functional calculations within the local-density approximation. On the bare Si(100) surface, the on-dimer site is found to be more stable than the intrarow site, even though the former has unfavorable Si-Si bond angles. This is ascribed to the extra dangling bond created in the latter geometry when the weak dimer a bonds are broken. However, the presence of hydrogen adatoms eliminates this difference and makes the intrarow site more favorable than the on-dimer site. It is therefore revealed in this theoretical study that hydrogen, an impurity unavoidable in the CVD process, plays an important role in determining the stable configuration of adsorbed SiH2 on Si(100) and hence affects the growth mechanism. [S0163-1829(98)52544-1].

Using classical mechanical and quantum Monte Carlo methods we trace the ground-state behavior with an applied magnetic field of localized electron pair states in a quantum dot. By developing a method to treat nonconserved paramagnetic interactions using variational and diffusion quantum Monte Carlo techniques we find (i) a single-triplet transition at very small magnetic field strengths, (ii) enhanced localization of the two electrons with increasing magnetic field, and (iii) a mechanism for pair breakup that is different from that proposed recently by Wan et al. [Phys. Rev. Lett. 75, 2879 (1995)]. [S0163-1829(98)04016-8].

We have evaluated the surface free energies of hydrogen-covered (100), (111), and (110) surfaces of diamond and silicon as a function of the hydrogen chemical potential using first-principles methods. The change in surface-energy anisotropy and equilibrium crystal shape due to hydrogen adsorption is examined. The three low-index facets are affected differently by the presence of hydrogen and unexpected differences are found between diamond and silicon. Taking into account possible formation of local facets on the hydrogen-covered (100) surfaces, we find that the dihydride phase is not stable on both C(100) and Si(100). nor is the 3x1 phase on C(100).

The presence of sulfur atoms on the Pd(100) surface is known to hinder the dissociative adsorption of hydrogen. Using density-functional theory and the full-potential linear augmented plane-wave method, we investigate the potential energy surface (PES) of the dissociative adsorption of H-2 On the sulfur covered Pd(100) surface. The PES is changed significantly compared to the dissociation on the clean Pd(100) surface, particularly for hydrogen close to the S atoms. While the hydrogen dissociation at the clean Pd(100) surface is nonactivated, for the (2 x 2) sulfur adlayer (coverage Theta (S) = 0.25) the dissociation of H-2 is inhibited by energy barriers. Their heights strongly depend on the distance between the hydrogen and sulfur atoms leading to a highly corrugated PES. The largest barriers are in the vicinity of the sulfur atoms due to the strong repulsion between sulfur and hydrogen. Still the hydrogen dissociation on the (2x2) sulfur covered Pd(100) surface is exothermic. Thus the poisoning effect of sulfur adatoms for H-2 dissociation at low sulfur coverage (Theta(S) less than or equal to 0.25) is mainly governed by the formation of energy barriers, not by blocking of the adsorption sites. For the c(2 x 2) sulfur adlayer (Theta(S)= 0.5), the PES for hydrogen dissociation is purely repulsive. This is due to the fact that for all different possible adsorption geometries the hydrogen molecules come too close.to the sulfur adatoms before the dissociation is completed.

A combination of the coupling constant integration technique and the quantum Monte Carlo method is used to investigate the most relevant quantities in Kohn-Sham density-functional theory. Variational quantum Monte Carlo is used to construct realistic many-body wave functions for diamond-structure silicon at different values of the Coulomb coupling constant. The exchange-correlation energy density along with the coupling constant dependence and the coupling-constant-integrated form of the pair-correlation function, the exchange-correlation hole, and the exchange-correlation energy are presented. Comparisons of these functions an mode with results obtained from the local-density approximation, the average density approximation, the weighted density approximation, and the generalized gradient approximation. We discuss reasons for the success of the local-density approximation. The insights provided by this approach will make it possible to carry out stringent tests of the effectiveness of exchange-correlation functionals and in the long term aid in the search for better functionals. [S0163-1829(98)02115-8].

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