Lin, Y-C, Yeh C-H, Lin H-C, Siao M-D, Liu Z, Nakajima H, Okazaki T, Chou M-Y, Suenaga K, Chiu P-W.
2018.
Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures. ACS Nano. 12:12080-12088., Number 12
Abstractn/a
Zhang, D, Ha J, Baek H, Chan Y-H, Natterer FD, Myers AF, Schumacher JD, Cullen WG, Davydov AV, Kuk Y, Chou MY, Zhitenev NB, Stroscio JA.
2017.
Strain Engineering a 4a×√3a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe2, Jul. Phys. Rev. Materials. 1:024005.: American Physical Society
Abstractn/a
Xu, C-Z, Cha Y-H, Chen Y, Chen P, Wang X, Dejoie C, Wong M-H, Hlevyack JA, Ryu H, Kee H-Y, Tamura N, Chou M-Y, Hussain Z, Mo S-K, Chiang T-C.
2017.
Elemental Topological Dirac Semimetal: α-Sn on InSb(111). Physical Review Letters. 118(146402)
Lu, A-Y, Zhu H, Xiao J, Chuu C-P, Chiu M-H, Cheng C-C, Yang C-W, Wei K-H, Dimosthenis S, Nordlund D, Chou M-Y, Zhang X, Li L-J.
2017.
Janus monolayers of transition metal dichalcogenides. Nature Nanotechnology. (12):744-749.
Tsai, Y, Chu Z, Han Y, Chuu C-P, Wu D, Johnson A, Cheng F, Chou M-Y, Muller DA, Li X, Lai K, Shih C-K.
2017.
Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement. Advanced Materials. :1703680–n/a.
Abstract
Nunna, R, Qiu P, Yin M, Chen H, Hanus R, Song Q, Zhang T, Chou M-Y, Agne MT, He J, Snyder JG, Shi X, Chen L.
2017.
Ultrahigh thermoelectric performance in Cu2Se-based hybrid materials with highly dispersed molecular CNTs. Energy Environ. Sci.. 10:1928-1935.: The Royal Society of Chemistry
AbstractHere{,} by utilizing the special interaction between metal Cu and multi-walled carbon nanotubes (CNTs){,} we have successfully realized the in situ growth of Cu2Se on the surface of CNTs and then fabricated a series of Cu2Se/CNT hybrid materials. Due to the high degree of homogeneously dispersed molecular CNTs inside the Cu2Se matrix{,} a record-high thermoelectric figure of merit zT of 2.4 at 1000 K has been achieved.
Feng, B, Chan Y-H, Feng Y, Liu R-Y, Chou MY, Kuroda K, Yaji K, Harasawa A, Moras P, Barinov A, Malaeb WG, Bareille C, Kondo T, Shin S, Komori F, Chiang T-C, Shi Y, Matsuda I.
2016.
Spin Texture in Type II Weyl Semimetal WTe2. PHYSICAL REVIEW B. 94(19):195134.
Natterer, FD, Zhao Y, Wyrick J, Chan Y-H, Ruan W-Y, Chou M-Y, Watanabe K, Taniguchi T, Zhitenev NB, Stroscio JA.
2015.
Strong Asymmetric Charge Carrier Dependence in Inelastic Electron Tunneling Spectroscopy of Graphene Phonons. Physical Review Letters. 114, Number 24
Abstractn/a
Lee, CM, Lee RCH, Ruan WY, Chou MY, Vyas A.
2013.
Magnetic-field dependence of low-lying spectra in bilayer graphene-based magnetic dots and rings, Mar. Solid State Communications. 156:49-53.
AbstractThe low-lying energy spectra of bilayer graphene in a perpendicular magnetic field B(r)(z) over cap were obtained by numerical diagonalization of the Hamiltonian. We assumed that B(r) takes on the shape of a circular dot or a ring. Under such a nonuniform field, the lowest-energy Landau levels, with N- = 0,1, remain invariant with a zero eigenvalue. For other Landau levels, complicated level-splitting and level-crossings take place when the effective radius of the dot or ring increases. (C) 2012 Elsevier Ltd. All rights reserved.
Zhuo, KN, Chou MY.
2013.
Surface passivation and orientation dependence in the electronic properties of silicon nanowires, Apr. Journal of Physics-Condensed Matter. 25:11., Number 14
AbstractVarious surface passivations for silicon nanowires have previously been investigated to extend their stability and utility. However, the fundamental mechanisms by which such passivations alter the electronic properties of silicon nanowires have not been clearly understood thus far. In this work, we address this issue through first-principles calculations on fluorine, methyl and hydrogen passivated [110] and [111] silicon nanowires. Comparing these results, we explain how passivations may alter the electronic structure through quantum confinement and strain and demonstrate how silicon nanowires may be modelled by an infinite circular quantum well. We also discuss why [110] nanowires are more strongly influenced by their surface passivation than [111] nanowires.