Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation

Citation:
Hong, HW, Wei CM, Chou MY, Wu Z, Basile L, Chen H, Holt M, Chiang TC.  2003.  Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation, Feb. Physical Review Letters. 90:4., Number 7

Abstract:

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

Notes:

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