@article {1409,
	title = {Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation},
	journal = {Physical Review Letters},
	volume = {90},
	number = {7},
	year = {2003},
	note = {<p>ISI Document Delivery No.: 647JZTimes Cited: 60Cited Reference Count: 17Cited References:      Wei CM, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.233408     Otero R, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.115401     Hupalo M, 2001, SURF SCI, V493, P526, DOI 10.1016/S0039-6028(01)01262-6     Materzanini G, 2001, PHYS REV B, V63, DOI 10.1103/PhysRevB.63.235405     Su WB, 2001, PHYS REV LETT, V86, P5116, DOI 10.1103/PhysRevLett.86.5116     Luh DA, 2001, SCIENCE, V292, P1131, DOI 10.1126/science.292.5519.1131     Budde K, 2000, PHYS REV B, V61, P10602     Chiang TC, 2000, SURF SCI REP, V39, P181, DOI 10.1016/S0167-5729(00)00006-6     Gavioli L, 1999, PHYS REV LETT, V82, P129, DOI 10.1103/PhysRevLett.82.129     Zhang ZY, 1998, PHYS REV LETT, V80, P5381, DOI 10.1103/PhysRevLett.80.5381     Boettger JC, 1998, J PHYS-CONDENS MAT, V10, P893, DOI 10.1088/0953-8984/10/4/017     Altfeder IB, 1997, PHYS REV LETT, V78, P2815, DOI 10.1103/PhysRevLett.78.2815     Kresse G, 1996, PHYS REV B, V54, P11169, DOI 10.1103/PhysRevB.54.11169     WEITERING HH, 1992, PHYS REV B, V45, P5991, DOI 10.1103/PhysRevB.45.5991     ZANGWILL A, 1988, PHYSICS SURFACES     CRACKNELL AP, 1984, METALS PHONON EL 13C, V3, P275     KNIGHT WD, 1984, PHYS REV LETT, V52, P2141, DOI 10.1103/PhysRevLett.52.2141Hong, HW Wei, CM Chou, MY Wu, Z Basile, L Chen, H Holt, M Chiang, TCAMERICAN PHYSICAL SOCCOLLEGE PK</p>
},
	month = {Feb},
	pages = {4},
	type = {Article},
	abstract = {<p>Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.</p>
},
	keywords = {ENERGIES, FILMS, HEIGHT, PB/SI(111)-(7X7), UNIFORM},
	isbn = {0031-9007},
	url = {<Go to ISI>://WOS:000181090800032},
	author = {Hong, H. W. and Wei, C. M. and Chou, M. Y. and Wu, Z. and Basile, L. and Chen, H. and Holt, M. and Chiang, T. C.}
}
