Publications

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2023
Holbrook, M, Chen Y, Kim H, Frammolino L, Liu M, Pan C-R, Chou M-Y, Zhang C, Shih C-K.  2023.  Creating a Nanoscale Lateral Junction in a Semiconductor Monolayer with a Large Built-in Potential. ACS NANO. 17:6966-6972. AbstractWebsite

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2022
Hlevyack, JA, Chan Y-H, Lin M-K, He T, Peng W-H, Royal EC, Chou M-Y, Chiang T-C.  2022.  Emergence of topological and trivial interface states in VSe2 films coupled to Bi2Se3, May. Phys. Rev. B. 105:195119.: American Physical Society AbstractWebsite

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Hlevyack, JA, Chan Y-H, Lin M-K, He T, Peng W-H, Royal EC, Chou M-Y, Chiang T-C.  2022.  Emergence of topological and trivial interface states in VSe2 films coupled to Bi2Se3. Phys. Rev. B. 105:195119. AbstractWebsite

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Hsu, W-T, Quan J, Pan C-R, Chen P-J, Chou M-Y, Chang W-H, MacDonald AH, Li X, Lin J-F, Shih C-K*.  2022.  Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2. Phys. Rev. B. 106:125302. AbstractWebsite

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2021
Lin, M-K, He T, Hlevyack JA, Chen P, Mo S-K, Chou M-Y, Chiang T-C.  2021.  Coherent Electronic Band Structure of TiTe2/TiSe2 Moiré Bilayer. ACS Nano. 15:3359-3364., Number 2 AbstractWebsite
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Siao, M-D, Lin Y-C, He T, Tsai M-Y, Lee K-Y, Chang S-Y, Lin K-I, Lin Y-F, Chou M-Y, Suenaga K, Chiu P-W.  2021.  Embedment of Multiple Transition Metal Impurities into WS2 Monolayer for Bandstructure Modulation. Small. 17:2007171., Number 17 AbstractWebsite

Abstract Band structure by design in 2D layered semiconductors is highly desirable, with the goal to acquire the electronic properties of interest through the engineering of chemical composition, structure, defect, stacking, or doping. For atomically thin transition metal dichalcogenides, substitutional doping with more than one single type of transition metals is the task for which no feasible approach is proposed. Here, the growth of WS2 monolayer is shown codoped with multiple kinds of transition metal impurities via chemical vapor deposition controlled in a diffusion-limited mode. Multielement embedment of Cr, Fe, Nb, and Mo into the host lattice is exemplified. Abundant impurity states thus generate in the bandgap of the resultant WS2 and provide a robust switch of charging/discharging states upon sweep of an electric filed. A profound memory window exists in the transfer curves of doped WS2 field-effect transistors, forming the basis of binary states for robust nonvolatile memory. The doping technique presented in this work brings one step closer to the rational design of 2D semiconductors with desired electronic properties.

Zhang, H, Holbrook M, Cheng F, Nam H, Liu M, Pan C-R, West D, Zhang S, Chou M-Y, Shih C-K.  2021.  Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO. ACS Nano. 15:2497-2505., Number 2 AbstractWebsite
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2019
Wong, DP, Aminzare M, Chou T-L, Pang C-S, Liu Y-ren, Shen T-H, Chang BK, Lien H-T, Chang S-T, Chien C-H, Chen Y-Y, Chu M-W, Yang Y-W, Hsieh W-P, Rogl G, Rogl P, Kakefuda Y, Mori T, Chou M-Y, Chen L-C, Chen K-H.  2019.  Origin of Band Modulation in GeTe-Rich Ge–Sb–Te Thin Film. ACS Applied Electronic Materials. 1:2619-2625., Number 12 AbstractWebsite
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Wei, P-C, Bhattacharya S, Liu Y-F, Liu F, He J, Tung Y-H, Yang C-C, Hsing C-R, Nguyen D-L, Wei C-M, Chou M-Y, Lai Y-C, Hung T-L, Guan S-Y, Chang C-S, Wu H-J, Lee C-H, Li W-H, Hermann RP, Chen Y-Y, Rao AM.  2019.  Thermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe. ACS Omega. 4:5442-5450., Number 3 AbstractWebsite
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2018
Hsieh, T-C, Chou M-Y, Wu Y-S.  2018.  Electrical valley filtering in transition metal dichalcogenides, Mar. Phys. Rev. Materials. 2:034003.: American Physical Society AbstractWebsite
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Xu, C-Z, Chan Y-H, Chen P, Wang X, Flötotto D, Hlevyack JA, Bian G, Mo S-K, Chou M-Y, Chiang T-C.  2018.  Gapped electronic structure of epitaxial stanene on InSb(111), Jan. Phys. Rev. B. 97:035122.: American Physical Society AbstractWebsite
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Flötotto, D, Bai Y, Chan Y-H, Chen P, Wang X, Rossi P, Xu C-Z, Zhang C, Hlevyack JA, Denlinger JD, Hong H, Chou M-Y, Mittemeijer EJ, Eckstein JN, Chiang T-C.  2018.  In Situ Strain Tuning of the Dirac Surface States in Bi2Se3 Films, 2018. Nano LettersNano Letters. 18(9):5628-5632.: American Chemical Society AbstractWebsite
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2017
Zhang, D, Ha J, Baek H, Chan Y-H, Natterer FD, Myers AF, Schumacher JD, Cullen WG, Davydov AV, Kuk Y, Chou MY, Zhitenev NB, Stroscio JA.  2017.  Strain Engineering a 4a×√3a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe2, Jul. Phys. Rev. Materials. 1:024005.: American Physical Society AbstractWebsite
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Chen, P, Pai WW, Chan Y-H, Takayama A, Xu C-Z, Karn A, Hasegawa S, Chou MY, Mo S-K, Fedorov A-V, Chiang T-C.  2017.  Emergence of charge density waves and a pseudogap in single-layer TiTe2, 2017. 8(1):516. AbstractWebsite

Two-dimensional materials constitute a promising platform for developing nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe2 from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscopy and scanning tunneling microscopy and spectroscopy, we observed the emergence of a (2 × 2) charge density wave order in single-layer TiTe2 with a transition temperature of 92 ± 3 K. Also observed was a pseudogap of about 28 meV at the Fermi level at 4.2 K. Surprisingly, no charge density wave transitions were observed in two-layer and multi-layer TiTe2, despite the quasi-two-dimensional nature of the material in the bulk. The unique charge density wave phenomenon in the single layer raises intriguing questions that challenge the prevailing thinking about the mechanisms of charge density wave formation.

Xu, C-Z, Cha Y-H, Chen Y, Chen P, Wang X, Dejoie C, Wong M-H, Hlevyack JA, Ryu H, Kee H-Y, Tamura N, Chou M-Y, Hussain Z, Mo S-K, Chiang T-C.  2017.  Elemental Topological Dirac Semimetal: α-Sn on InSb(111). Physical Review Letters. 118(146402)
Tsai, Y, Chu Z, Han Y, Chuu C-P, Wu D, Johnson A, Cheng F, Chou M-Y, Muller DA, Li X, Lai K, Shih C-K.  2017.  Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement. Advanced Materials. :1703680–n/a. AbstractWebsite

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Nunna, R, Qiu P, Yin M, Chen H, Hanus R, Song Q, Zhang T, Chou M-Y, Agne MT, He J, Snyder JG, Shi X, Chen L.  2017.  Ultrahigh thermoelectric performance in Cu2Se-based hybrid materials with highly dispersed molecular CNTs. Energy Environ. Sci.. 10:1928-1935.: The Royal Society of Chemistry AbstractWebsite

Here{,} by utilizing the special interaction between metal Cu and multi-walled carbon nanotubes (CNTs){,} we have successfully realized the in situ growth of Cu2Se on the surface of CNTs and then fabricated a series of Cu2Se/CNT hybrid materials. Due to the high degree of homogeneously dispersed molecular CNTs inside the Cu2Se matrix{,} a record-high thermoelectric figure of merit zT of 2.4 at 1000 K has been achieved.

2016
Chen, P, Chan Y-H, Wong M-H, Fang X-Y, Chou MY, Mo S-K, Hussain Z, Fedorov A-V, Chiang T-C.  2016.  Dimensional Effects on the Charge Density Waves in Ultrathin Films of TiSe2. NANO LETTERS. 16(10):6331-6336.
Chen, P, Chan Y-H, Fang X-Y, Mo S-K, Hussain Z, Fedorov A-V, Chou MY, Chiang T-C.  2016.  Hidden Order and Dimensional Crossover of the Charge Density Waves in TiSe2. SCIENTIFIC REPORTS. 6:37910.
Feng, B, Chan Y-H, Feng Y, Liu R-Y, Chou MY, Kuroda K, Yaji K, Harasawa A, Moras P, Barinov A, Malaeb WG, Bareille C, Kondo T, Shin S, Komori F, Chiang T-C, Shi Y, Matsuda I.  2016.  Spin Texture in Type II Weyl Semimetal WTe2. PHYSICAL REVIEW B. 94(19):195134.
2015
Chen, P, Chan Y-H, Fang X-Y, Zhang Y, Chou MY, Mo S-K, Hussain Z, Fedorov A-V, Chiang T-C.  2015.  Charge density wave transition in single-layer titanium diselenide. Nature Communications. 6 Abstract
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2014
Weng, SC, Xu RQ, Said AH, Leu BM, Ding Y, Hong H, Fang XY, Chou MY, Bosak A, Abbamonte P, Cooper SL, Fradkin E, Chang SL, Chiang TC.  2014.  Pressure-induced antiferrodistortive phase transition in SrTiO3: Common scaling of soft-mode with pressure and temperature. Epl. 107:5. AbstractWebsite
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Zhang, F, Wood BC, Wang Y, Wang CZ, Ho KM, Chou MY.  2014.  Ultrafast Bulk Diffusion of AlHx in High-Entropy Dehydrogenation Intermediates of NaAlH4. Journal of Physical Chemistry C. 118:18356-18361. AbstractWebsite
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Zhang, WJ, Chuu CP, Huang JK, Chen CH, Tsai ML, Chang YH, Liang CT, Chen YZ, Chueh YL, He JH, Chou MY, Li LJ.  2014.  Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures. Scientific Reports. 4:8. AbstractWebsite
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2012
Hsing, CR, Wei CM, Chou MY.  2012.  Quantum Monte Carlo investigations of adsorption energetics on graphene, Oct. Journal of Physics-Condensed Matter. 24:7., Number 39 AbstractWebsite

We have performed calculations of adsorption energetics on the graphene surface using the state-of-the-art diffusion quantum Monte Carlo method. Two types of configurations are considered in this work: the adsorption of a single O, F, or H atom on the graphene surface and the H-saturated graphene system (graphane). The adsorption energies are compared with those obtained from density functional theory with various exchange-correlation functionals. The results indicate that the approximate exchange-correlation functionals significantly overestimate the binding of O and F atoms on graphene, although the preferred adsorption sites are consistent. The energy errors are much less for atomic hydrogen adsorbed on the surface. We also find that a single O or H atom on graphene has a higher energy than in the molecular state, while the adsorption of a single F atom is preferred over the gas phase. In addition, the energetics of graphane is reported. The calculated equilibrium lattice constant turns out to be larger than that of graphene, at variance with a recent experimental suggestion.