Ab-Initio Simulation Laboratory

We report the first atomically resolved images of ordered Au trimers on Si(111)root 3X root 3R30 degrees-Au using wave-front reconstruction of scanned-energy glancing-angle Kikuchi electron spectra. Each Au image has a resolution (full width at half magnitude) of less than 1 Angstrom. The images indicate that Au trimers art ordered and nonrotated within the surface plane and with respect to the second-layer Si plane providing direct evidence of the conjugate honeycomb-chained-trimer model for the Au-root 3 system.

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

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The structural bases on the metal/semiconductor interfaces, such as gold trimers on the Au/Si (111)(root 3 x root 3)R30 degrees surface and antimony trimers on the Sb/Si(111)(root 3 x root 3)R30 degrees surface, can be imaged directly with a simple inversion of low-energy (<600 eV) Kikuchi-electron patterns (Kikuchi-electron holography-KEH). The relative positions of the building blocks (trimers) on the adsorbates to the substrate atoms are also determined. This short-range-order KEH tool, which provides the 3D Patterson function, can be viewed as a twin of grazing-incidence X-ray diffraction. Using direct structural information obtained by KEH, one can greatly reduce the tested models in a complete trial-and-error structural-determination process.

We obtained highly resolved and artifact-free 3D holographic images reconstructed from measured Kikuchi electron (quasi-elastic electron) diffraction patterns with contributions from different emitters. Direct inversion of Kikuchi patterns with glancing incidence geometry shows clear images of the surface dimer and the bulk atoms of Si(001)(2 x 1) surface. This observation demonstrates the applicability of electron-emission holography to complicated systems that contain more than one emitter. This work also demonstrates the surface sensitivity of Kikuchi electron holography.

Direct inversion of measured multiple-energy Kikuchi electron patterns from a Si(001) (2 x 1) surface with glancing and normal-incidence geometry shows clear images of the surface dimer and the bulk atoms. The three-dimensional artifact-free real-space images of the atoms contributed from different local emitters are resolved clearly. The observations demonstrate that Kikuchi electron holography has the surface sensitivity and can reveal the atomic structures of complicated multiemitter systems. By changing the collecting angle of Kikuchi electrons, one can selectively image the atoms behind the emitter in the backward direction; thus the surface and the bulk information can be obtained with different collecting angles. Therefore, the potential of Kikuchi electron holography to solve the local atomic structure of the unknown surfaces is high.

The adsorptions of CO molecule on various fcc(111) surfaces (Rh, Ir, Pt, and Cu) have been studied by diffusion quantum Monte Carlo (DMC) calculations, and the results show that the top site is the most stable adsorption site on all the four surfaces, in agreement with experiments. In particular, the site preference including the bridge site for CO/Pt(111) is predicted, i.e., the top site is most preferred followed by the bridge site while the hollow sites are much less favorable, in accordance with the existing experimental observations of the bridge-site adsorption, yet never on the hollow sites. Compared to the DMC results, density functional theory (DFT) calculations with the generalized-gradient approximation (GGA) predict very similar adsorption energies on the top site, but they overestimate those on the bridge and hollow sites. That is, although the nonlocal exchange-correlation contribution is small for the single-coordinated top-site adsorption, it is essential and required to be properly included for a correct description of the higher coordinated bridge- and hollow-sites adsorptions. These altogether explain why the top site adsorption for CO on Rh, Pt, and Cu(111) surfaces was not predicted correctly by the previous standard local or semilocal DFT calculations.

To assess the accuracy of exchange-correlation approximations within density functional theory (DFT), diffusion quantum Monte Carlo (DMC) and DFT methods are used to calculate the energies of isomers of three covalently bonded carbon and boron clusters (C(20), B(18), and B(20)), and three metallic aluminum and copper clusters (Al(13), Al(55), and Cu(13)). We find that local and semilocal DFT methods predict the same energy ordering as DMC for the metallic clusters but not for the covalent clusters, implying that the DFT functionals are inadequate in such systems. In addition, we find that DFT fails to describe energy reductions arising from Jahn-Teller distortions..

We have performed calculations of adsorption energetics on the graphene surface using the state-of-the-art diffusion quantum Monte Carlo method. Two types of configurations are considered in this work: the adsorption of a single O, F, or H atom on the graphene surface and the H-saturated graphene system (graphane). The adsorption energies are compared with those obtained from density functional theory with various exchange-correlation functionals. The results indicate that the approximate exchange-correlation functionals significantly overestimate the binding of O and F atoms on graphene, although the preferred adsorption sites are consistent. The energy errors are much less for atomic hydrogen adsorbed on the surface. We also find that a single O or H atom on graphene has a higher energy than in the molecular state, while the adsorption of a single F atom is preferred over the gas phase. In addition, the energetics of graphane is reported. The calculated equilibrium lattice constant turns out to be larger than that of graphene, at variance with a recent experimental suggestion.

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Total and single-differential cross sections for electron-impact ionization are calculated in a relativistic formulation for ions in the hydrogen isoelectronic sequence: HI, He II, C VI, Ne X, Fe XXVI, and Ag XLVII. Transition amplitudes are evaluated in the two-potential distorted-wave approximation. Sets of different asymptotic charges are used to study the mutual screening of the primary and secondary electrons. Relativistic effects are investigated by taking the nonrelativistic limit and are found to increase the cross sections. Thomson’s scaling law along the isoelectronic sequence is also studied.

Energy- and angle-dependent photoelectron cross sections from surface and bulk W(110) 4f7/2 core levels are measured and compared with dynamical multiple scattering calculations. The agreement between experimental and theoretical results is found to be significantly better than corresponding previous studies, permitting a determination of the first layer atomic plane distance: d12 = 2.26 +/- 0.05 angstrom. Forward-scattering enhancements along bond directions are observed under selected scattering conditions. In all cases, final-state multiple scattering accounts for the principal energy and angle dependencies in the cross section. Typical variation of bulk and surface 4f photoelectron intensities with kinetic energy or emission angle resulting from final-state effects is observed to be a factor of 2. This result suggests that previous core-level spectra for stepped W(110) surfaces have been incorrectly interpreted.

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Depositing particles randomly on a 1D lattice is expected to result in an equal number of particle pairs separated by even or odd lattice units. Unexpectedly, the even-odd symmetry is broken in the self-selection of distances between indium magic-number clusters on a Si(100)-2 x 1 reconstructed surface. Cluster pairs separated by even units are less abundant because they are linked by silicon atomic chains carrying topological solitons, which induce local strain and create localized electronic states with higher energy. Our findings reveal a unique particle-particle interaction mediated by the presence or absence of topological solitons on alternate lattices.

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The formation process of Al magic clusters on the Si(111)-7 x 7 surface was investigated by means of a variable-temperature scanning tunneling microscope (STM) in situ and was interpreted using density-functional theory (DFT) calculations. At a growth temperature of 450 degrees C, Al atoms hopped among the corner, center, and T4 sites and also across the dimer rows on the Si(111)-7 x 7 surface. At low coverage below 0.08 ML, a single Al atom was adsorbed on the corner or center site. When the coverage was increased to 0.08 ML, Al dimers and trimers appeared, and Al magic clusters were also observed. However, no Al tetramers or pentamers were experimentally confirmed. Careful analysis of STM images suggests that Al trimers could be key precursors for the formation of Al magic clusters, and DFT calculations verified this interpretation. Total-energy calculation results using DFT reveal that this is due to the small energy gain from Al trimer to Al tetramer. These results are important for understanding the atomic structure and the formation mechanism of the magic clusters on the Si(111)-7 x 7 surface.

Photoelectron-diffraction studies of Nb(001) have been performed to determine the first-interlayer contraction using Mg K alpha radiation (h nu = 1253.6 eV) as an excitation source. Photoemission intensities of the 3d(5/2) core level were measured as a function of the polar angle along several azimuths on the single-crystal surface. The 202.3-eV (205.0-eV) binding energy for the 3d(5/2) (3d(3/2)) core level was well resolved in the photoemission spectra, where the peak intensity could be easily evaluated by curve-fitting processes. Large oscillations of the 3d(5/2) intensity as a function of the polar angle due to forward-focusing were observed. Based on multiple-scattering calculations for several first-interlayer spacings ranging from the bulk value to 16% contraction, the best agreement with experiment was obtained for a (13 +/- 5)% contraction of the first-interlayer spacing.

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Field evaporation of silicon as positive and negative ions in the field ion microscope and scanning tunneling microscope configurations is investigated with the charge-exchange model using atomic potentials from an empirical potential due to Tersoff [Phys. Rev. B 37, 6991 (1988)] and an environment dependent potential developed by Bolding and Andersen [Phys. Rev. B 41, 10568 (1990)]. For the geometry of the field ion microscope, Si+ should be the observable ion species. In the close-spaced electrode geometry of the scanning tunneling microscope, Si2- should be the favored ion species since it requires the lowest evaporation field.

Electrical conduction mechanism in ultrathin Pb (111) films formed on the Si(111)root 3x root 3-Pb surface has been investigated by means of in situ conductivity measurements, angle-resolved photoemission spectroscopy, and first-principles calculations. To investigate the origin of the bilayer oscillation observed in the present conductivity measurement, we perform some simulations based on the calculated band structure. They reveal that the density of states near the Fermi level cannot explain the bilayer oscillation, therefore, exclusively assigning it to the relaxation time. Surface roughness during the bilayer film growth seems to play a crucial role in the bilayer oscillation of the relaxation time.

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Motivated by the synthesis of the layered structure CoO2via Li atom deintercalation from LixCoO2, herein, we investigated the electronic structure, lattice dynamics, electron–phonon interaction, and superconductivity of monolayer CoO2 using first-principles calculations. This 2D material was predicted to have a ferromagnetic ground state with a metallic band structure and the total magnetization of 0.83μB. Remarkably, the non-spin polarized calculations show that the monolayer CoO2 possesses phonon-mediated superconductivity at 25–28 K owing to its intermediate to strong electron–phonon coupling (EPC). The rather strong EPC in this compound is mainly driven by the acoustic phonons, making this compound one of the highest-temperature superconductors among the existing 2D materials. Moreover, the CoO2 sheets could be synthesized via exfoliation from bulk CoO2 owing to the relatively small interlayer binding energy while maintaining its stability under normal experimental conditions. Compared to its bulk and bilayer counterparts, monolayer CoO2 was found to have highest EPC.

The work function of atomically uniform Ag films grown on Fe(100) is measured as a function of film thickness. It shows layer-resolved variations as a result of quantum confinement of the valence electrons. A first-principles calculation reproduces the observed variations except for very thin films (one and two monolayers), and the differences can be attributed, in part, to strain effects caused by the lattice mismatch between Ag and Fe. These results illustrate the close interaction between interface effects and surface properties.

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Using scanning-tunneling microscopy and first-principles total-energy calculations, we have considered the structural properties of the so-called doped clusters formed by depositing additional 0.05 monolayer of In onto the 4x3-periodicity magic-cluster array in the In/Si(100) system. Low-temperature STM observations have revealed that most of the doped clusters have an asymmetric shape. According to the total-energy calculations, these clusters have plausibly Si6In8 composition. In such a cluster, one of the In atoms is mobile and can hop between four equivalent sites within a cluster. The hopping between sites, located in the different 2ax3a halves of the cluster, is characterized by the barrier of about 0.7 eV, and this hopping becomes frozen at 55 K. In contrast, the hopping between the neighboring sites within the same cluster half persists up to very low temperatures, as the barrier height here is an order of magnitude lower. Due to the above structural properties, the doped asymmetric Si6In8 cluster can be treated as a promising switch, logic gate, or memory cell of the atomic-scale size.

Basing on the results of the scanning tunneling microscopy (STM) observations and density functional theory (DFT) calculations, the structural model for the Cu magic clusters formed on Si(1 1 1)7 x 7 surface has been proposed. Using STM, composition of the Cu magic clusters has been evaluated from the quantitative analysis of the Cu and Si mass transport occurring during magic cluster converting into the Si(1 1 1)’5.5 x 5.5’-Cu reconstruction upon annealing. Evaluation yields that Cu magic cluster accommodates similar to 20 Cu atoms with similar to 20 Si atoms being expelled from the corresponding 7 x 7 half unit cell (HUC). In order to fit these values, it has been suggested that the Cu magic clusters resemble fragments of the Cu2Si-silicide monolayer incorporated into the rest-atom layer of the Si(1 1 1)7 x 7 HUCs. Using DFT calculations, stability of the nineteen models has been tested of which five models appeared to have formation energies lower than that of the original Si(1 1 1)7 x 7 surface. The three of five models having the lowest formation energies have been concluded to be the most plausible ones. They resemble well the evaluated composition and their counterparts are found in the experimental STM images. (C) 2009 Elsevier B.V. All rights reserved.

The adatoms, dimers and rest atoms in the three outermost atomic layers of the Si(111)-(7 x 7) surface are directly imaged with glancing Kikuchi electron holography. The applicability of Kikuchi electron holography to complicated multiple-emitter surfaces is evident. The three-dimensional relative positions of atoms on the Si(111)-(7 x 7) surface are in good accordance with the LEED-optimized DAS model.