Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation

Citation:
Hong, H. W., Wei C. M., Chou M. Y., Wu Z., Basile L., Chen H., Holt M., & Chiang T. C. (2003).  Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation. Physical Review Letters. 90, 4., Feb, Number 7

Abstract:

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.

Notes:

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