<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hong, H. W.</style></author><author><style face="normal" font="default" size="100%">Wei, C. M.</style></author><author><style face="normal" font="default" size="100%">Chou, M. Y.</style></author><author><style face="normal" font="default" size="100%">Wu, Z.</style></author><author><style face="normal" font="default" size="100%">Basile, L.</style></author><author><style face="normal" font="default" size="100%">Chen, H.</style></author><author><style face="normal" font="default" size="100%">Holt, M.</style></author><author><style face="normal" font="default" size="100%">Chiang, T. C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation</style></title><secondary-title><style face="normal" font="default" size="100%">Physical Review Letters</style></secondary-title><alt-title><style face="normal" font="default" size="100%">Phys. Rev. Lett.</style></alt-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">ENERGIES</style></keyword><keyword><style  face="normal" font="default" size="100%">FILMS</style></keyword><keyword><style  face="normal" font="default" size="100%">HEIGHT</style></keyword><keyword><style  face="normal" font="default" size="100%">PB/SI(111)-(7X7)</style></keyword><keyword><style  face="normal" font="default" size="100%">UNIFORM</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2003</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Feb</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">&lt;Go to ISI&gt;://WOS:000181090800032</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">7</style></number><volume><style face="normal" font="default" size="100%">90</style></volume><pages><style face="normal" font="default" size="100%">4</style></pages><isbn><style face="normal" font="default" size="100%">0031-9007</style></isbn><language><style face="normal" font="default" size="100%">English</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Article</style></work-type><accession-num><style face="normal" font="default" size="100%">WOS:000181090800032</style></accession-num><notes><style face="normal" font="default" size="100%">&lt;p&gt;ISI Document Delivery No.: 647JZTimes Cited: 62Cited Reference Count: 17Cited References:      Altfeder IB, 1997, PHYS REV LETT, V78, P2815, DOI 10.1103/PhysRevLett.78.2815     Boettger JC, 1998, J PHYS-CONDENS MAT, V10, P893, DOI 10.1088/0953-8984/10/4/017     Budde K, 2000, PHYS REV B, V61, P10602     Chiang TC, 2000, SURF SCI REP, V39, P181, DOI 10.1016/S0167-5729(00)00006-6     CRACKNELL AP, 1984, METALS PHONON EL 13C, V3, P275     Gavioli L, 1999, PHYS REV LETT, V82, P129, DOI 10.1103/PhysRevLett.82.129     Hupalo M, 2001, SURF SCI, V493, P526, DOI 10.1016/S0039-6028(01)01262-6     KNIGHT WD, 1984, PHYS REV LETT, V52, P2141, DOI 10.1103/PhysRevLett.52.2141     Kresse G, 1996, PHYS REV B, V54, P11169, DOI 10.1103/PhysRevB.54.11169     Luh DA, 2001, SCIENCE, V292, P1131, DOI 10.1126/science.292.5519.1131     Materzanini G, 2001, PHYS REV B, V63, DOI 10.1103/PhysRevB.63.235405     Otero R, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.115401     Su WB, 2001, PHYS REV LETT, V86, P5116, DOI 10.1103/PhysRevLett.86.5116     Wei CM, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.233408     WEITERING HH, 1992, PHYS REV B, V45, P5991, DOI 10.1103/PhysRevB.45.5991     ZANGWILL A, 1988, PHYSICS SURFACES     Zhang ZY, 1998, PHYS REV LETT, V80, P5381, DOI 10.1103/PhysRevLett.80.5381Hong, HW Wei, CM Chou, MY Wu, Z Basile, L Chen, H Holt, M Chiang, TCAMERICAN PHYSICAL SOCCOLLEGE PK&lt;/p&gt;
</style></notes><custom7><style face="normal" font="default" size="100%">076104</style></custom7><auth-address><style face="normal" font="default" size="100%">Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA. Acad Sinica, Inst Phys, Taipei 11529, Taiwan. Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA. Univ Illinois, Dept Mat Sci &amp; Engn, Urbana, IL 61801 USA. Univ Illinois, Dept Phys, Urbana, IL 61801 USA. City Univ Hong Kong, Dept Phys &amp; Mat Sci, Kowloon, Hong Kong, Peoples R China.Hong, HW (reprint author), Univ Illinois, Frederick Seitz Mat Res Lab, 104 S Goodwin Ave, Urbana, IL 61801 USA.</style></auth-address></record></records></xml>