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C
Chiu, J-M, Chou T-chin, Wong DP, Lin Y-R, Shen C-A, Hy S, Hwang B-J, Tai Y, Wu H-L, Chen L-C, Chen K-H.  2018.  A synergistic “cascade” effect in copper zinc tin sulfide nanowalls for highly stable and efficient lithium ion storage. Nano Energy. 44:438-446. AbstractWebsite
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Chiu, J-M, Chen E-M, Lee C-P, Shown I, Tunuguntla V, Chou J-S, Chen L-C, Chen K-H, Tai Y.  2017.  Geogrid-Inspired Nanostructure to Reinforce a CuxZnySnzS Nanowall Electrode for High-Stability Electrochemical Energy Conversion Devices. Advanced Energy Materials. 7(12):1602210.
Chong, CW, Hsu D, Chen WC, Li CC, Huang YF, Han HC, Lin JG, Chen LC, Chen KH, Chen YF.  2011.  Giant room temperature electric-field-assisted magnetoresistance in La0.7Sr0.3MnO3/n-Si nanotips heterojunctions. Nanotechnology. 22:125701.
Chou, CT, Lin CH, Wu MH, Cheng TW, Lee JH, Liu CHJ, Tai Y, Chattopadhyay S, Wang JK, Chen KH, Chen LC.  2011.  Tuning open-circuit voltage in organic solar cells by magnesium modified Alq3. J. Appl. Phys.. 110:083104.
Chou, CT, Lin CH, Tai Y, C.H.Liu, Chen LC, Chen KH.  2012.  Stacking orientation mediation of pentacene and derivatives for highopen-circuit voltage organic solar cells. J. Phys. Chem. Lett.. 3:1079-1083.
Chou, YC, Chattopadhyay S, Chen* LC, Chen YF, Chen KH.  2003.  Doping and electrical properties of amorphous silicon carbon nitride films. Diamond & Related Materials. 12:1213-1219.
Chou, CT, Tang WL, Lin CH, Liu CH, Chen LC, Chen KH.  2012.  Effect of substrate temperature on orientation of subphthalocyanine molecule in organic photovoltaic cells. Thin Solid Films. 520:2289-2292.
Chouhan, N, Yeh CL, Hu SF, Huang JH, Liu RS, Chang WS, Chen KH.  2011.  Array of CdSe QD-sensitized ZnO nanorods serves as photoanode for water splitting. Chem. Commun.. 47:3493-3495.
Chouhan, N, Yeh CL, Hu SF, Huang JH, Tsai CW, Liu RS, Chang WS, Chen KH.  2010.  Array of CdSe QD-sensitized ZnO nanorods serves as photoanode for water splitting. J. Electrochem. Soc.. 157:1430-1433.
Chung, YL, Peng X, Liao YC, Yao S, Chen L-C, Chen K-H, Feng ZC.  2011.  Raman scattering and Rutherford backscattering studies on InN films grown byplasma-assisted molecular beam epitaxy. Thin Solid Films. 519:6778.
Ciao-WeiYang, Chin-ChangChen, Chen K-H, SoofinCheng.  2017.  Effect of pore-directing agents in SBA-15 nanoparticles on the performance of Nafion®/SBA-15n composite membranes for DMFC. Journal of Membrane Science. 526:106-117.
D
Daichakomphu, N, Abbas S, Chou T-L, Chen L-C, Chen K-H, Sakulkalavek A, Sakdanuphab R.  2022.  Understanding the effect of sputtering pressures on the thermoelectric properties of GeTe films. Journal of Alloys and Compounds. 893:162342. AbstractWebsite

In this work, we study the effect of sputtering pressures on the thermoelectric properties of GeTe films. The working pressures were differentiated from 3 to 30 mTorr, and the as-deposited films were annealed at 623 K for 10 min in Ar atmosphere. The results show that the working pressure has a significant effect on the Ge content and crystalline size. The turning trend of the Seebeck coefficient with different sputtering pressures corresponds to the Ge content. The surface morphology of annealed film will change from cracks to voids with increasing sputtering pressure. This behavior can be explained by the growth mechanisms model. The voids and relatively low crystalline size of GeTe films affect to the reduction of the electrical conductivity. In addition, the void content decreased as film thickness was increased. Therefore, controlling the working pressures in the sputtering process and film thickness is important for the thermoelectric performance of GeTe thin film. In our work, we prove that the thermoelectric properties of GeTe films could be optimized effectively by simply tuning different sputtering conditions.

Das, CR, Dhara S, Hsu HC, Chen LC, Jeng YR, Bhaduri AK, Raj B, Chen KH, Albert SK.  2009.  Mechanism of recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation. J. Raman Spect.. 40:1881-1884.
Das, S, Valiyaveettil SM, Chen K-H, Suwas S, Mallik RC.  2019.  Thermoelectric properties of Mn doped BiCuSeO, 2019. Materials Research Express. 6(8):086305.: IOP Publishing AbstractWebsite

BiCuSeO is a promising thermoelectric material having earth-abundant non-toxic constituents and favourable thermoelectric properties like ultra-low thermal conductivity. In this study, Mn+2 has been introduced at the Bi+3 site to increase hole concentration as well as Seebeck coefficient, through aliovalent doping and magnetic impurity incorporation respectively. Samples were prepared through two-step solid state synthesis with the composition Bi1-xMnxCuSeO (x = 0.0, 0.04, 0.06, 0.08, 0.10 and 0.12). X-ray diffraction patterns confirmed the tetragonal (space group: P4/nmm) crystal structure of BiCuSeO as well as phase purity of the samples. The Seebeck coefficient and electrical resistivity had a decreasing trend with increasing doping fraction owing to the generation of charge carriers. The samples with x = 0.04 and 0.06 showed temperature independent Seebeck coefficient above 523 K, which is a signature of small polaron hopping. While the Seebeck coefficient of the samples with x = 0.08, 0.10 and 0.12 increased above 523 K due to the combination of localized and extended states. The thermal conductivity was dominated by the lattice part of the thermal conductivity. As a result of moderate Seebeck coefficient and low electrical resistivity, the highest power factor of 0.284 mW m−1-K2 was obtained for the Bi0.92Mn0.08CuSeO at 773 K, leading to a maximum zT of 0.4 at 773.

Das, CR, Hsu HC, Dhara S, Bhaduri AK, Raj B, Chen LC, Chen KH, Albert SK, Ray A, Tzeng Y.  2010.  A complete Raman mapping of phase transitions in Si under indentation. J. Raman Spectroscopy. 41:334.
Das, D, Raha D, Chen WC, Chen KH, Wu CT, Chen LC.  2012.  Effect of substrate bias on the promotion of nanocrystalline silicon growth from He-diluted SiH4plasma at low temperature. J. Mater. Res.. 27:1303.
Das*, D, Jana M, Barua AK, Chattopadhyay S, Chen LC, Chen KH.  2002.  Electrical, thermal and structural properties of microcrystalline Si thin films. Jpn.Appl. Phys. Lett.. 41:L229-232.
Das*, D, Chen KH, Chattopadhyay S, Chen LC.  2002.  Spectroscopic studies of nitrogenated amorphous carbon films prepared by ion beam sputtering. J. Appl. Phys.. 91:4944-4955.
Datta, A, Dhara* S, Muto S, Hsu CW, Wu CT, Shen CH, Tanabe T, Maruyama T, Chen KH, Chen LC, Wang YL.  2005.  Formation and in-situ dynamics of metallic nanoblisters in self-ion-implanted GaN nanowires. Nanotechnology. 16:2764-2769.
Deliwala, S, Goldman J, Chen KH, Lu C-Z, Mazur E.  1994.  Coherent Anti-Stokes Raman Spectroscopy of Infrared Multiphoton Excited Molecules. J. Chem. Phys.. 101:8517-8528.
Dhara, S, Chang CW, Tsai HM, Chen* LC, Chen KH.  2010.  Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. Appl. Phys. Lett.. 96:253113.
Dhara, SK, Magudapathy P, Kesavamoorthy R, Kalavathi S, Nair KGM, Hsu GM, Chen LC, Chen* KH, Santhakumar K, Soga T.  2006.  Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature. Appl. Phys. Lett.. 88:241904-(1-3).
Dhara, SK, Datta A, Wu CT, Lan ZH, Chen* KH, Wang YL, Chen LC, Hsu CW, Lin HM, Chen CC.  2003.  Enhanced dynamic annealing in self-ion implanted GaN nanowires. Appl. Phys. Lett.. 82:451-453.
Dhara, SK, Datta A, Lan ZH, Chen* KH, Wang YL, Shen CS, Chen LC, Hsu CW, Lin HM, Chen CC.  2004.  Blue shift of yellow band in self-ion beam irradiated GaN nanowires. Appl. Phys. Lett.. 84:3486-3488.
Dhara, S, Yao LC, Wu CT, Hsu CW, Tu WS, Chen KH, Wang YL, Chen LC.  2010.  Focused ion beam induced nanowelding and defect doping as building block for nanoscale electronics in GaN nanowires. J. Phys. Chem.. C114:15260.