Mechanism of recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation | Kuei-Hsien Chen

Mechanism of recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation

Citation:: Das, CR, Dhara S, Hsu HC, Chen LC, Jeng YR, Bhaduri AK, Raj B, Chen KH, Albert SK. 2009. Mechanism of recrystallization process in epitaxial GaN under dynamic stress field : Atomistic origin of planar defect formation. J. Raman Spect.. 40:1881-1884.