Focused ion beam induced nanowelding and defect doping as building block for nanoscale electronics in GaN nanowires
- Citation:
- Dhara, S, Yao LC, Wu CT, Hsu CW, Tu WS, Chen KH, Wang YL, Chen LC.
2010. Focused ion beam induced nanowelding and defect doping as building block for nanoscale electronics in GaN nanowires. J. Phys. Chem.. C114:15260.
