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Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline silicon carbon nitride: a wide band gap semiconductor. Appl. Phys. Lett.. 72:2463-2465.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Chen, LC, Chen KH, Wei SL, Kichambare PD, Wu JJ, Lu TR, Kuo CT.  1999.  Crystalline SiCN: ahard material rivals to cubic BN. Thin Solid Films. 355:112-116.
Aravind, K, Su YW, Ho IL, Wu CS, Chang-Liao KS, Su WF, Chen KH, Chen LC, Chen CD.  2009.  Coulomb blockade behavior in an indium nitride nanowire with disordered surface states. Appl. Phys. Lett.. 95:092110-(1-3).
Syum, Z, Billo T, Sabbah A, Venugopal B, Yu S-Y, Fu F-Y, Wu H-L, Chen L-C, Chen K-H.  2021.  Copper Zinc Tin Sulfide Anode Materials for Lithium-Ion Batteries at Low Temperature, 2021. ACS Sustainable Chemistry & EngineeringACS Sustainable Chemistry & Engineering. : American Chemical Society AbstractWebsite
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Chen*, LC, Wen CY, Liang CH, Hong WK, Chen KJ, Cheng HC, Shen CS, Wu CT, Chen KH.  2002.  Controlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor deposition. Adv. Fun. Mate. 12:687-692.
Du, H-Y, Wang C-H, Hsu H-C, Chang S-T, Chen U-S, Yen SC, Chen LC, Shih H-C, Chen* KH.  2008.  Controlled platinum nanoparticles uniformly dispersed on nitrogen-doped carbon nanotubes for methanol oxidation. Diamond & Relat. Mater.. 17:535-541.
Yang, TH, Chen CH, Chatterjee A, Li HY, Lo JT, Wu CT, Chen KH, Chen* LC.  2003.  Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties. Chem. Phys. Lett.. 379:155-161.
Yang, J, Liu TW, Hsu CW, Chen LC, Chen KH, Chen* CC.  2006.  Controlled growth of aluminium nitride nanorod arrays via chemical vapour deposition. Nanotechnology. 17:S321-326.
Wu, JC, Chen CC, Chen KH, Chang* YC.  2011.  Controlled growth of aligned Alpha-helical polypeptide brushes for tunable electrical conductivity. ,Appl. Phys. Lett.. 98:133304.
Chang, CY, Pearton* SJ, Huang PJ, G.C. Chi H, Wang T, Chen JJ, Ren F, Chen KH, Chen LC.  2007.  Control of nucleation site density of GaN nanowires. Appl. Surf. Sci.. 253:3196-3200.
Kamal Hussien, M, Sabbah A, Qorbani M, Putikam R, Kholimatussadiah S, Tzou D-LM, Hammad Elsayed M, Lu Y-J, Wang Y-Y, Lee X-H, Lin T-Y, Thang NQ, Wu H-L, Haw S-C, Wu KC-W, Lin M-C, Chen K-H, Chen L-C.  2024.  Constructing B─N─P Bonds in Ultrathin Holey g-C3N4 for Regulating the Local Chemical Environment in Photocatalytic CO2 Reduction to CO, 2024. Small. n/a(n/a):2400724.: John Wiley & Sons, Ltd AbstractWebsite

Abstract The lack of intrinsic active sites for photocatalytic CO2 reduction reaction (CO2RR) and fast recombination rate of charge carriers are the main obstacles to achieving high photocatalytic activity. In this work, a novel phosphorus and boron binary-doped graphitic carbon nitride, highly porous material that exhibits powerful photocatalytic CO2 reduction activity, specifically toward selective CO generation, is disclosed. The coexistence of Lewis-acidic and Lewis-basic sites plays a key role in tuning the electronic structure, promoting charge distribution, extending light-harvesting ability, and promoting dissociation of excitons into active carriers. Porosity and dual dopants create local chemical environments that activate the pyridinic nitrogen atom between the phosphorus and boron atoms on the exposed surface, enabling it to function as an active site for CO2RR. The P?N?B triad is found to lower the activation barrier for reduction of CO2 by stabilizing the COOH reaction intermediate and altering the rate-determining step. As a result, CO yield increased to 22.45 µmol g?1 h?1 under visible light irradiation, which is ≈12 times larger than that of pristine graphitic carbon nitride. This study provides insights into the mechanism of charge carrier dynamics and active site determination, contributing to the understanding of the photocatalytic CO2RR mechanism.

Shown, I, Ganguly A, Chen L-C, Chen K-H.  2015.  Conducting polymer-based flexible supercapacitor, 2015. Energy Science & EngineeringEnergy Science & Engineering. 3(1):2-26.: John Wiley & Sons, Ltd AbstractWebsite

Abstract Flexible supercapacitors, a state-of-the-art material, have emerged with the potential to enable major advances in for cutting-edge electronic applications. Flexible supercapacitors are governed by the fundamentals standard for the conventional capacitors but provide high flexibility, high charge storage and low resistance of electro active materials to achieve high capacitance performance. Conducting polymers (CPs) are among the most potential pseudocapacitor materials for the foundation of flexible supercapacitors, motivating the existing energy storage devices toward the future advanced flexible electronic applications due to their high redox active-specific capacitance and inherent elastic polymeric nature. This review focuses on different types of CPs-based supercapacitor, the relevant fabrication methods and designing concepts. It describes recent developments and remaining challenges in this field, and its impact on the future direction of flexible supercapacitor materials and relevant device fabrications.

Bhusari, DM, Chen CK, Chen KH, Chuang TJ, Chen LC, Lin MC.  1997.  Composition of SiCN Crystals Consisting of a Predominantly Carbon-nitride Network. J. Mater. Res.. 12:322.
Das, CR, Hsu HC, Dhara S, Bhaduri AK, Raj B, Chen LC, Chen KH, Albert SK, Ray A, Tzeng Y.  2010.  A complete Raman mapping of phase transitions in Si under indentation. J. Raman Spectroscopy. 41:334.
W.Chiou, J, Tsai HM, Pao CW, Dong* CL, Chang CL, Chien FZ, Pong WF, Tsai M-H, Shi SC, Chen CF, Chen LC, Chen KH, Hong I-H, Chen C-H, Lin H-J, Guo JH.  2005.  Comparison of the electronic structures of AlN nanotips grown on p- and n-type Si substrates. J. Phys.: Condens. Matter. 17:7523-7530.
Chen*, RS, Tsai HY, Chan CH, Huang YS, Chen YT, Chen KH, Chen LC.  2015.  Comparison of CVD- and MBE-grown GaN nanowires: crystallinity, photoluminescence, and photoconductivity. J. Electronic Mater. . 44 :177.
Ray, SC, Pao CW, Tsai HM, Chiou JW, Pong* WF, Chen CW, Tsai M-H, Papakonstantinou P, Chen LC, Chen KH.  2007.  A comparative study of the electronic structures of oxygen- and chlorinetreated nitrogenated carbon nanotubes by X-ray absorption and scanning photoelectron microscopy. Appl. Phys. Lett.. 91:202102.
Chen, KH, Wu JJ, Chen LC, Wen C-Y, Kichambare PD, Tarntair FG, Kuo PF, Chang SW, Chen YF.  2000.  Comparative studies in field emission properties of carbon-based materials. Diamond & Related Materials. 9:1249-1256.
Deliwala, S, Goldman J, Chen KH, Lu C-Z, Mazur E.  1994.  Coherent Anti-Stokes Raman Spectroscopy of Infrared Multiphoton Excited Molecules. J. Chem. Phys.. 101:8517-8528.
Fahimi, Z, Moradlou O, Sabbah A, Chen K-H, Chen L-C, Qorbani M.  2022.  Co3V2O8 hollow spheres with mesoporous walls as high-capacitance electrode for hybrid supercapacitor device, 2022. 436:135225. AbstractWebsite

Bimetal oxides are promising materials in the field of energy storage due to their various oxidation states, synergistic interactions among multiple metal species, and stability. In this work, Co3V2O8 hollow spheres are synthesized by a two-step hydrothermal method: (i) synthesis of V2O5 spheres and (ii) partial replacement of V by Co through the Kirkendall effect. As an electrode, it shows an extrinsic pseudocapacitive charge-storage mechanism due to different oxidation states of V and Co ions. Because of the low crystallinity degree of the mesoporous wall and high accessible surface area of hollow spheres, the optimum Co3V2O8 electrode reaches a high specific capacitance of 2376F g−1 at a current density of 2 A g−1, which is more than two times higher than the top reported values, and a rate capability retention of ∼80% at 20 A g−1. Using Co3V2O8, activated carbon, and KOH as positive, negative electrodes, and electrolyte, respectively, a hybrid supercapacitor device presents maximum energy and power densities of 59.2 Wh kg−1 and 36.6 kW kg−1, respectively. Further, the aqueous supercapacitor device shows superior structural and electrochemical stabilities after 10,000 galvanostatic charge–discharge cycles because of the arrays of voids in the orthorhombic crystal structure of Co3V2O8 that can decrease the volume expansion/shrinkage during the intercalation/deintercalation processes. Our results provide a platform for exploring bimetallic Co and V-based oxides, hydroxides, and sulfides nanostructures as promising energy storage materials in the future.

Wei-ChaoChen, Tunuguntla V, Min-HsuehChiu, Lian-JiunLi, Shown I, Lee C-H, Hwang J-S, Chen L-C, Chen K-H.  2017.  Co-solvent effect on microwave-assisted Cu2ZnSnS4 nanoparticles synthesis for thin film solar cell. Solar Energy Materials and Solar Cells. 161:416-423.
Huang, LW, Chang CK, Chien FC, Chen KH, Chen P, Chen FR, Chang CS.  2014.  Characterization of the cleaning process on a transferred graphene. J. Vac. Sci. Tech. A . 32:050601.
Muto*, S, Dhara SK, Datta A, Hsu CW, Wu CT, Shen CH, Chen LC, Chen KH, Wang YL, Tanabe T, Maruyama T, Lin HM, Chen CC.  2004.  Characterization of nanodome on GaN nanowires formed with Ga ion irradiation. Mater. Trans.. 45:435-439.