Valiyaveettil, SM, Nguyen D-L, Wong DP, Hsing C-R, Paradis-Fortin L, Qorbani M, Sabbah A, Chou T-L, Wu K-K, Rathinam V, Wei C-M, Chen L-C, Chen K-H.
2022.
Enhanced Thermoelectric Performance in Ternary Skutterudite Co(Ge0.5Te0.5)3 via Band Engineering, 2022. Inorganic Chemistry. : American Chemical Society
Abstract
Valiyaveettil, SM, Qorbani M, Hsing C-R, Chou T-L, Paradis-Fortin L, Sabbah A, Srivastava D, Nguyen D-L, Ho T-T, Billo T, Ganesan P, Wei C-M, Chen L-C, Chen K-H.
2022.
Enhanced thermoelectric performance of skutterudite Co1−yNiySn1.5Te1.5−x with switchable conduction behavior, 2022. Materials Today Physics. 28:100889.
AbstractA fine control of carriers in solids is the most essential thing while exploring any functionality. For a ternary skutterudite like CoSn1·5Te1.5−x, which has been recently recognized as a potential material for thermoelectric conversion, the dominant carrier could be either electrons or holes via chemically tuning the quaternary Sn2Te2 rings in the structure. Both theoretical calculation and different spectroscopic probes, such as X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) were employed to unveil the conduction type switching details. On the other hand, a Ni-for-Co substitution was applied to enhance electronic transport, and thereby the thermoelectric power factor. Thanks to the substantial cut-off of lattice thermal conductivity by the characteristic Sn2Te2 rings in the skutterudite structure, ultimately a 70-fold increase in the dimensionless figure-of-merit (zT) is achieved at 723 K with the nominal composition Co0·95Ni0·05Sn1·5Te1.5.
Venugopal, B, Syum Z, Yu S-Y, Sabbah A, Shown I, Chu C-W, Chen L-C, Lee C-H, Wu H-L, Chen K-H.
2022.
Enhancing the Areal Capacity and Stability of Cu2ZnSnS4 Anode Materials by Carbon Coating: Mechanistic and Structural Studies During Lithiation and Delithiation, 2022. ACS Omega. 7(11):9152-9163.: American Chemical Society
Abstract
Ho, T-T, Yang Z-L, Fu F-Y, Jokar E, Hsu H-C, Liu P-C, Quadir S, Cheng-YingChen, Chiu Y-P, Wu C-I, Chen K-H, Chen L-C.
2022.
Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells, 2022. ACS Applied Energy MaterialsACS Applied Energy Materials. 5(11):14531-14540.: American Chemical Society
Abstractn/a
Fu, F-Y, Fan C-C, Qorbani M, Huang C-Y, Kuo P-C, Hwang J-S, Shu G-J, Chang S-M, Wu H-L, Wu C-I, Chen K-H, Chen L-C.
2022.
Selective CO2-to-CO photoreduction over an orthophosphate semiconductor via the direct Z-scheme heterojunction of Ag3PO4 quantum dots decorated on SnS2 nanosheets, 2022. Sustainable Energy & Fuels. 6(19):4418-4428.: The Royal Society of Chemistry
AbstractDirect Z-scheme heterojunctions are widely used for photocatalytic water splitting and CO2 reduction due to facilitating well-separated photogenerated charge carriers and spatial isolation of redox reactions. Here, using a facile two-step hydrothermal and ion-exchange method, we uniformly decorate silver orthophosphate (i.e., Ag3PO4) quantum dots with an average characteristic size of ∼10 nm over tin(iv) sulphide (i.e., SnS2) nanosheets to form a 0D/2D heterojunction. The direct Z-scheme mechanism, i.e. charge transport for efficient electron (from SnS2) and hole (from Ag3PO4) recombination, is confirmed by the following experiments: (i) ultraviolet and X-ray photoelectron spectroscopies; (ii) photodeposition of Pt and PbO2 nanoparticles on reduction and oxidation sites, respectively; (iii) in situ X-ray photoelectron spectroscopy; and (iv) electron paramagnetic resonance spectroscopy. Owing to the photoreduction properties of Ag3PO4 with orthophosphate vacancies, Z-scheme charge carrier transfer, and efficient exciton dissociation, an optimized heterojunction shows a high CO2-to-CO reduction yield of 18.3 μmol g−1 h−1 with an illustrious selectivity of ∼95% under light illumination, which is about 3.0 and 47.8 times larger than that of Ag3PO4 and SnS2, respectively. The carbon source for the CO product is verified using a 13CO2 isotopic experiment. Moreover, by tracing the peak at ∼1190 cm−1 in the dark and under light irradiation, in situ diffuse reflectance infrared Fourier transform spectroscopy demonstrates that the CO2 reduction pathway goes through the COOH* intermediate.
Quadir, S, Qorbani M, Sabbah A, Wu T-S, kumar Anbalagan A, Chen W-T, Valiyaveettil SM, Thong H-T, Wang C-W, Cheng-YingChen, Lee C-H, Chen K-H, Chen L-C.
2022.
Short- and Long-Range Cation Disorder in (AgxCu1–x)2ZnSnSe4 Kesterites, 2022. Chemistry of Materials. : American Chemical Society
Abstract
Shelke, AR, Wang H-T, Chiou J-W, Shown I, Sabbah A, Chen K-H, Teng S-A, Lin I-A, Lee C-C, Hsueh H-C, Liang Y-H, Du C-H, Yadav PL, Ray SC, Hsieh S-H, Pao C-W, Tsai H-M, Chen C-H, Chen K-H, Chen L-C, Pong W-F.
2022.
Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement. Small. n/a:2105076., Number n/a
AbstractAbstract Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2. Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2.