Bayikadi, KS, Imam S, Tee W-S, Kavirajan S, Chang C-Y, Sabbah A, Fu F-Y, Liu T-R, Chiang C-Y, Shukla D, Wu C-T, Chen L-C, Chou M-Y, Chen K-H, Sankar R.
2024.
Ultra-low lattice thermal conductivity driven high thermoelectric figure of merit in Sb/W co-doped GeTe, 2024. Journal of Materials Chemistry A. 12(44):30892-30905.: The Royal Society of Chemistry
AbstractHigh thermoelectric performance is a material challenge associated mainly with the manipulation of lattice dynamics to obtain extrinsic phonon transport routes, which can make the lattice thermal conductivity (κlat) intrinsically low by introducing multiple scattering mechanisms. The present study shows that the lattice-strain-induced phonon scattering resulting from microstructural distortions in GeTe-based compounds can enable ultralow lattice thermal conductivity. The unusual lattice shrinkage, W interstitials, W nanoprecipitates, and heavy elemental mass, in Ge0.85Sb0.1W0.05Te culminate in an ultralow lattice thermal conductivity of ∼0.2 W m−1 K−1 at 825 K. Microstructural distortions in this Sb/W co-doped GeTe are found to be primarily associated with shorter W–Te bonding owing to the anomalous effect of the higher electronegativity of the W atoms. Furthermore, the increased electrical conductivity (σ) resulting from the enhanced vacancy formation caused by W doping and W interstitials synergistically contributes to optimization of the thermoelectric performance (ZT) to ∼2.93 at 825 K. The thermoelectric efficiency (η) as high as ∼17% has been obtained for a single leg in this composition at an operating temperature of 825 K, with an estimated device ZT value of ∼1.38.