Publications

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2005
Zhao, XY, Wei CM, Yang L, Chou MY.  2005.  Comment on "Quantum confinement and electronic properties of silicon nanowires" - Reply, Jun. Physical Review Letters. 94:1., Number 21 AbstractWebsite
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Yvon, K, Renaudin G, Wei CM, Chou MY.  2005.  Hydrogenation-induced insulating state in the intermetallic compound LaMg2Ni, Feb. Physical Review Letters. 94:4., Number 6 AbstractWebsite

Hydrogenation-induced metal-semiconductor transitions usually occur in simple systems based on rare earths and/or magnesium, accompanied by major reconstructions of the metal host (atom shifts >2 Angstrom). We report on the first such transition in a quaternary system based on a transition element. Metallic LaMg2Ni absorbs hydrogen near ambient conditions, forming the nonmetallic hydride LaMg2NiH7 which has a nearly unchanged metal host structure (atom shifts <0.7 Angstrom). The transition is induced by a charge transfer of conduction electrons into tetrahedral [NiH4](4-) complexes having closed-shell electron configurations.

2004
Peles, A, Alford JA, Ma Z, Yang L, Chou MY.  2004.  First-principles study of NaAlH(4) and Na(3)AlH(6) complex hydrides, Oct. Physical Review B. 70:7., Number 16 AbstractWebsite

We present a first-principles investigation of the structural properties, electronic structure, and the chemical stability of the complex hydrides NaAlH(4) and Na(3)AlH(6). The calculations are performed within the density functional framework employing norm conserving pseudopotentials. The structural properties of both hydrides compare well with experimental data. A detailed study of the electronic structure and the charge-density redistribution reveal the features of an ionic covalent bonding between Al and H in the (AlH(4))(-) and (AlH(6))(-3) anionic complexes embedded in the matrix of Na(+) cations. The orbital hybridization and the characteristics of bonding orbitals within the complexes are identified. The calculated reaction energies of these complex hydrides are in good agreement with the experimentally determined values.

Zhao, XY, Wei CM, Yang L, Chou MY.  2004.  Quantum confinement and electronic properties of silicon nanowires, Jun. Physical Review Letters. 92:4., Number 23 AbstractWebsite

We investigate the structural, electronic, and optical properties of hydrogen-passivated silicon nanowires along [110] and [111] directions with diameter d up to 4.2 nm from first principles. The size and orientation dependence of the band gap is investigated and the local-density gap is corrected with the GW approximation. Quantum confinement becomes significant for d<2.2 nm, where the dielectric function exhibits strong anisotropy and new low-energy absorption peaks start to appear in the imaginary part of the dielectric function for polarization along the wire axis.