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Chen, RS, Chang HM, Huang* YS, Tsai DS, Chattopadhyay S, Chen KH.  2004.  Growth and characterization of vertically aligned IrO2 nanotubes. J. Crystal Growth. 271:105-112.
Chen, LC, Wu CT, Wu JJ, Chen KH.  2000.  Growth, characterization, and properties of carbon nitride with and without silicon addition. Int. J. of Modern Phys. B14:333-348.
Chen, JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen* KH.  2007.  Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source. J. Phys. Chem. A. 111:6755-6759.
Chen, KH, Lu CZ, Avilas L, Mazur E, Bloembergen N, Shultz MJ.  1989.  Multiplex Coherent Anti-Stokes Raman Spectroscopy Study of Infrared-multiphoton-excited OCS. J. Chem. Phys.. 91:1462.
Chen, RS, Yang TH, Chen HY, Chen* LC, Chen* KH, Yang YJ, Su CH, Lin CR.  2009.  High-gain photoconductivity in semiconducting InN nanowires. Appl. Phys. Lett.. 95:162112.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Chen*, LC, Lin HY, Wong CS, Chen KH, Lin ST, Yu YC, Wang CW, Lin EK, Lin KC.  1999.  Ellipsometric study of carbon nitride thin films with and without silicon addition. Diamond & Related Materials. 8:618-622.
Chen*, LC, Wen CY, Liang CH, Hong WK, Chen KJ, Cheng HC, Shen CS, Wu CT, Chen KH.  2002.  Controlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor deposition. Adv. Fun. Mate. 12:687-692.
Chen*, CW, Lee MH, Chen LC, Chen KH.  2004.  Structural and electronic properties of wide band gap silicon carbon nitride materials – afirst principles study. Diamond & Relat. Mater.. 13:1158-1165.
Chen*, LC, Chang SW, Chang CS, Wen CY, Wu J-J, Chen YF, Huang YS, Chen KH.  2001.  Catalyst-free growth of transparent SiCN nanorods. J. Phys. & Chem. of Solids. 62:1567-1576.
Chen*, LC, Hong WK, Tarntair FG, Chen KJ, Lin JB, Kichambare PD, Cheng HC, Chen KH.  2001.  Field electron emission from carbon-based emitters and devices. New Diamond and Frontier Carbon Tech.. 11:249.
Chen*, C-C, Yeh C-C, Chen CH, Yu MY, Liu HL, Wu JJ, Chen KH, Chen LC, Peng JY, Chen YF.  2001.  Catalytic growth and characterization of gallium nitride nanowires. J. Am. Chem. Soc.. 123:2791-2798.
Chen*, KH, Bhusari DM, Yang JR, Lin ST, Wang TY, Chen LC.  1998.  Highly transparent nano-crystalline diamond films via substrate pretreatment and methane fraction optimization. Thin Solid Films. 332:34-39.
Chen*, CW, Huang CC, Lin YY, Su WF, Chen* LC, Chen KH.  2006.  Photoconductivity and highly selective UV sensing features of amorphous silicon carbon nitride thin films. Appl. Phys. Lett.. 88:073515-(1-3).
Chen*, KH, Hsu CH, Lo HC, Chattopadhyay S, Wu CT, Hwang JS, Yang YJ, Chen LC.  2005.  Generally applicable self-masking technique for nanotip array fabrication. Int. J. Nanoscience. 4:879-886.
Chen*, CW, Huang CC, Lin YY, Chen LC, Chen KH, Su WF.  2005.  Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection. Diamond Relat. Mater.. 14:1010-1013.
Chen*, LC, Hong WK, Tarntair FG, Chen KJ, Lin JB, Kichambare PD, Cheng HC, Chen KH.  2001.  Field electron emission from C-based emitters and devices. New Diamond and Frontier Carbon Technology. 11:249-263.
Chen*, KH, Wong TS, Wang CT, Chen LC, Ma KJ.  2001.  Carbon nanotubes growth by rapid thermal processing. Diamond and Related Materials. 10:1810-1813.
Chen*, RS, Tsai HY, Chan CH, Huang YS, Chen YT, Chen KH, Chen LC.  2015.  Comparison of CVD- and MBE-grown GaN nanowires: crystallinity, photoluminescence, and photoconductivity. J. Electronic Mater. . 44 :177.
Cheng*, HC, Chen KJ, Hong WK, Tarntair FG, Lin JB, Chen KH, Chen LC.  2001.  Fabrication and characterization of low turn-on voltage carbon nanotube field emission triodes. Electrochemical and Solid-State Letters. 4 (8):H15-17.
Cheng*, HC, Hong WK, Tarntair FG, Chen KJ, Lin JB, Chen KH, Chen LC.  2001.  Integration of thin film transistor controlled carbon nanotubes for field-emission devices. Electrochemical and Solid-State Letters. 4 (4):H5-H7.
Cheng-YingChen, Aprillia BS, Wei-ChaoChen, Teng Y-C, Chiu C-Y, Chen R-S, Hwang J-S, Chen K-H, Chen L-C.  2018.  Above 10% Efficiency Earth-abundant Cu2ZnSn(S,Se)4 Solar Cells by Introducing Alkali Metal Fluoride Nanolayers as Electron-selective Contacts. Nano Energy. :-. AbstractWebsite

Abstract The present investigation mainly addresses the open circuit voltage (Voc) issue in kesterites based Cu2ZnSn(S,Se)4 solar cells by simply introducing alkali metal fluoride nanolayers (  several nm NaF, or LiF) to lower the work functions of the front İTO\} contacts without conventional hole-blocking ZnO layers. Kelvin probe measurements confirmed that the work function of the front İTO\} decreases from 4.82 to 3.39 and 3.65 eV for NaF and LiF, respectively, resulting in beneficial band alignment for electron collection and/or hole blocking on top electrodes. Moreover, a 10.4% power conversion efficiency ( 11.5% in the cell effective area) \{CZTSSe\} cell with improved Voc of up to 90 mV has been attained. This demonstration may provide a new direction of further boosting the performance of copper chalcogenide based solar cells as well.

Cheng-YingChen, Aprillia BS, Wei-ChaoChen, Teng Y-C, Chiu C-Y, Chen R-S, Hwang J-S, Chen K-H, Chen L-C.  2018.  Above 10% efficiency earth-abundant Cu2ZnSn(S,Se)4 solar cells by introducing alkali metal fluoride nanolayers as electron-selective contacts, 2018. Nano Energy. 51:597-603. AbstractWebsite

The present investigation mainly addresses the open circuit voltage (Voc) issue in kesterite based Cu2ZnSn(S,Se)4 solar cells by simply introducing alkali metal fluoride nanolayers (~ several nm NaF, or LiF) to lower the work functions of the front ITO contacts without conventional hole-blocking ZnO layers. Kelvin probe measurements confirmed that the work function of the front ITO decreases from 4.82 to 3.39 and 3.65 eV for NaF and LiF, respectively, resulting in beneficial band alignment for electron collection and/or hole blocking on top electrodes. Moreover, a 10.4% power conversion efficiency (~ 11.5% in the cell effective area) CZTSSe cell with improved Voc of up to 90 mV has been attained. This demonstration may provide a new direction of further boosting the performance of copper chalcogenide based solar cells as well.

Chien, CT, Li SS, Lai WJ, Yeh YC, Chen HA, Chen LC, Chen KH, T.Nemoto, Isoda S, Chen M, Fujita T, Chhowalla M, Chen CW.  2012.  Tunable photoluminescence from graphene oxide. Angewandte Chemie. 51:6662-6666.
Chien, SC, Chattopadhyay* S, Chen LC, Lin ST, Chen KH.  2003.  Mechanical properties of amorphous boron carbon nitride films produced by dual gun sputtering. Diamond Relat. Mater. . 12:1463-1471.