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Chen, RS, Tsai HY, Huang YS, Chen YT, Chen LC, Chen KH.  2012.  Photoconduction efficiencies in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: acomparison study. Appl. Phys. Lett.. 101:113109.
Chen, KH, Chuang MC, Penney M, Banholzer WF.  1992.  Temperature and Density Distribution of H2 and H in Hot Filament CVD of Diamond Films. J. Appl. Phys.. 71:1485.
Chen, RS, Chang HM, Huang* YS, Tsai DS, Chattopadhyay S, Chen KH.  2004.  Growth and characterization of vertically aligned IrO2 nanotubes. J. Crystal Growth. 271:105-112.
Chen, KH, Lu CZ, Avilas L, Mazur E, Bloembergen N, Shultz MJ.  1989.  Multiplex Coherent Anti-Stokes Raman Spectroscopy Study of Infrared-multiphoton-excited OCS. J. Chem. Phys.. 91:1462.
Chen, RS, Yang TH, Chen HY, Chen* LC, Chen* KH, Yang YJ, Su CH, Lin CR.  2009.  High-gain photoconductivity in semiconducting InN nanowires. Appl. Phys. Lett.. 95:162112.
Chen, LC, Wu CT, Wu JJ, Chen KH.  2000.  Growth, characterization, and properties of carbon nitride with and without silicon addition. Int. J. of Modern Phys. B14:333-348.
Chen, JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen* KH.  2007.  Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source. J. Phys. Chem. A. 111:6755-6759.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Chen, KH, Wang J, Mazur E.  1986.  Raman Spectroscopy of Infrared Multiphoton Excited Molecules. Int. Quantum Electronics Conf.. , San Francisco
Chen, LC, Juan CC, Wu JY, Chen KH, Teng JW.  1996.  On the Optimized Nucleation of Near-Single-Crystal CVD Diamond Film. MRS Symp.. :Vol.416,81.
Chen, TT, Hsieh YP, Wei CM, Chen* YF, Chen LC, Chen KH, Peng YH, Kuan CH.  2008.  Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures. Nanotechnology. 19:365705.
Chen, KH, Wu JY, Chen LC, Juan CC, Hsu T.  1995.  Epitaxial Growth of Diamond Films for Electronic Applications. the 188th Meeting of the Electrochemical Society. :Vol95-21,p55-69., Chicago
Chen, RS, Chen HY, Lu CY, Chen CP, Chen LC, Yang YJ, Chen* KH.  2007.  Ultrahigh photocurrent gain in m-axial GaN nanowires. Appl. Phys. Lett.. 91:223106.
Chen, LC, Chen CK, Bhusari DM, Chen KH, Wei SL, Chen YF, Jong YC, Lin DY, Li CF, Huang YS.  1997.  Growth of Ternary Silicon Carbon Nitride as a New Wide Band Gap Material. MRS Symp.. :Vol.468,31.
Chen, J-C, Chen P-Y, Chen H-Y, Chen K-H.  2018.  Analysis and characterization of an atropisomeric ionomer containing quaternary ammonium groups. Polymer. 141:143-153. AbstractWebsite

Polyethersulfone ionomers containing quaternary ammoniums were prepared for the applications on alkaline anion exchange membrane (AAEM) fuel cells. The ionomers were synthesized from 2,2′-dimethyl-4,4′-biphenyldiol and bis(4-chlorophenyl) sulfone via nucleophilic substitution followed by bromination, quaternization and anion exchange reaction. The biphenyl structure in polymer main chain exhibited atropisomerism after bromination, leading to the anisochronous signals of geminal protons on bromomethyl groups in 1H NMR spectra. Model compounds were synthesized to confirm the atropisomerism by EI mass and 1H NMR spectra. The resonance peaks from five possible repeating units of brominated polyethersulfones in the 1H NMR spectra were identified and discussed in detail. The rotational barriers of biphenyl structures containing brominated methyl groups at 2 and 2′ positions were calculated by density functional theory. The properties of these polyethersulfone anion exchange membranes (AEMs) were characterized. Their IECs ranged from 0.81 to 1.75 mequiv/g. The corresponding water uptakes and dimensional changes were in the ranges of 19–42% and 12–38%, respectively. The tensile strength of an AEM (1.75MQAPES-OH) with an IEC of 1.75 mequiv/g remained 17 MPa even though the water uptake was 42%. The hydroxide conductivity of 1.75MQAPES-OH could reach 51.4 mS/cm at 98%RH and 80 °C. After alkaline stability test for 168 h, the AEMs degraded slightly in terms of their IECs and hydroxide conductivity.

Chen, CP, Ganguly A, Chen RS, Fischer W, Chen LC, Chen KH.  2011.  Ultra-sensitive in situ label-free DNA detection using GaN nanowires-based extended-gate field-effect-transistor sensor. Anal. Chem.. 83:1938-1943.
Chen, HY, Chen RS, Rajan NK, Chang FC, Chen LC, Chen KH, Yang YJ, Reed MA.  2011.  Size-dependent persistent photocurrent and surface band bending in m-axial GaN nanowires. Phys. Rev. B. 84:205443.
Chen, RS, Lu CY, Chen KH, Chen LC.  2009.  Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires. Appl. Phys. Lett.. 95:233119.
Chen, KH, Wu JJ, Chen LC, Wen C-Y, Kichambare PD, Tarntair FG, Kuo PF, Chang SW, Chen YF.  2000.  Comparative studies in field emission properties of carbon-based materials. Diamond & Related Materials. 9:1249-1256.
Chen, HM, Chen CK, Lin CC, Liu RS, Yang H, Chang WS, Chen KH, Chan TS, Lee JF, Tsai DP.  2011.  Multi-bandgap-sensitized ZnO nanorod photoelectrode arrays for water splitting: an X-ray absorption spectroscopy approach for the electronic evolution under solar illumination. J. Phys. Chem. C. 115:21971-21980.
Chen, YT, Tsai WC, Chen WY, Hsiao CL, Hsu HC, Chang WH, Hsu TM, Chen KH, Chen LC.  2012.  Growth of sparse arrays of narrow GaNnanorods hosting spectrally stable InGaNquantum disks. Opt. Express. 20:16166-16173.
Chen, WC, Lien HT, Cheng TW, Su C, Chong CW, Ganguly A, Chen KH, Chen* LC.  2015.  Side Group of Poly(3-alkylthiophene)s Controlled Dispersion of Single-Walled Carbon Nanotubes for Transparent Conducting Film. ACS Appl. Mater. & Inter. . 7:4616.
Chen, CH, Chen YF, Lan ZH, Chen LC, Chen KH, Jiang HX, Lin JY.  2004.  Mechanism of enhanced luminescence in InxAlyGa1–x–yN quaternary epilayers. Appl. Phys. Lett.. 84:1480-1482.
Chen, YC, Lin YG, Hsu YK, Yen SC, Chen KH, Chen LC.  2014.  Novel iron oxyhydroxide lepidocrocite nanosheet as ultrahigh power density anode material for asymmetric supercapacitors. Small . 10:3803–3810.
Chen, KH, Chao CH, Chuang TJ.  1996.  GaN Growth by Nitrogen ECR-CVD Method. MRS Symp. . :Vol.423,377.