Chen, F-W, Lue N-Y, Chou M-Y, Wu Y-SG.
2022.
All-electrical valley filtering in graphene systems. I. A path to integrated electro-valleytronics, 10. Journal of Applied Physics. 132, Number 16
Abstract{Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: (i) all electrical gate control, (ii) electrically switchable valley polarity, (iii) robustness against configuration fluctuation, and (iv) potential for room temperature operation. This valley filtering is accomplished by a combination of gap opening in either bilayer graphene with a vertical electrical field or single layer graphene on h-BN, valley splitting with a horizontal electric field, and intervalley mixing by defect scattering. In addition to functioning as a building block for valleytronics, the proposed configuration makes it possible to convert signals between electrical and valleytronic forms, thus allowing for the integration of electronic and valleytronic components for the realization of electro-valleytronics.}
Shelke, AR, Wang H-T, Chiou J-W, Shown I, Sabbah A, Chen K-H, Teng S-A, Lin I-A, Lee C-C, Hsueh H-C, Liang Y-H, Du C-H, Yadav PL, Ray SC, Hsieh S-H, Pao C-W, Tsai H-M, Chen C-H, Chen K-H, Chen L-C, Pong W-F.
2022.
Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement. Small. n/a:2105076., Number n/a
AbstractAbstract Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2. Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2.
Hsu, W-T, Quan J, Pan C-R, Chen P-J, Chou M-Y, Chang W-H, MacDonald AH, Li X, Lin J-F, Shih C-K*.
2022.
Quantitative determination of interlayer electronic coupling at various critical points in bilayer MoS2. Phys. Rev. B. 106:125302.
Abstract
Wang, Y-S, Li K-B, Chang C-F, Lin T-W, Li J-Q, Hsiao S-S, Chen J-M, Lai Y-H, Chen Y-C, Chen Y-F, Chuu C-S, Yu IA.
2022.
Temporally ultralong biphotons with a linewidth of 50 kHz.. APL Photonics. 7(12), 126102(2022)