Kuei-Hsien Chen

Although hematite (i.e., α-Fe2O3) has been widely investigated in photoelectrochemical water oxidation studies due to its high theoretical photocurrent density, it still suffers from serious surface charge recombination and low photoelectrochemical stability. Here we report an in-situ electrochemical method to form a uniform and ultrathin (i.e., 3–5 nm) passivation layer all over the porosities of the optimized ~3.2% Ti-doped α-Fe2O3 photoanode. We unveil the amorphous and defective nature of the in-situ derived layer assigning to a high concentration of oxygen vacancy and intercalated potassium atoms there, i.e., the formation of Ti/K co-doped defective α-Fe2O3-x. Owing to the efficient passivation of surface states, alleviated surface-potential fluctuations, and low charge-transfer resistance at the interface, photoanodes show an average of ~60% enhancement in the photoelectrochemical performance, applied bias absorbed photon-to-current efficiency of 0.43%, and Faradaic efficiency of ~88%. Moreover, the passivation layer prevents direct contact between the electrode material and electrolyte, resulting in less degradation and outstanding photoelectrochemical stability with photocurrent retention of ~95% after ~100 hours, albeit by performing several successive in-situ electrochemical passivation processes. This work presents an industrially scalable method to controllably engineer the interfaces of semiconductors–electrolytes with precious metal-free defective hematite-based co-catalysts for sustainable photoelectrochemical solar-to-fuel conversion applications.

Direct Z-scheme heterojunctions are widely used for photocatalytic water splitting and CO2 reduction due to facilitating well-separated photogenerated charge carriers and spatial isolation of redox reactions. Here, using a facile two-step hydrothermal and ion-exchange method, we uniformly decorate silver orthophosphate (i.e., Ag3PO4) quantum dots with an average characteristic size of ∼10 nm over tin(iv) sulphide (i.e., SnS2) nanosheets to form a 0D/2D heterojunction. The direct Z-scheme mechanism, i.e. charge transport for efficient electron (from SnS2) and hole (from Ag3PO4) recombination, is confirmed by the following experiments: (i) ultraviolet and X-ray photoelectron spectroscopies; (ii) photodeposition of Pt and PbO2 nanoparticles on reduction and oxidation sites, respectively; (iii) in situ X-ray photoelectron spectroscopy; and (iv) electron paramagnetic resonance spectroscopy. Owing to the photoreduction properties of Ag3PO4 with orthophosphate vacancies, Z-scheme charge carrier transfer, and efficient exciton dissociation, an optimized heterojunction shows a high CO2-to-CO reduction yield of 18.3 μmol g−1 h−1 with an illustrious selectivity of ∼95% under light illumination, which is about 3.0 and 47.8 times larger than that of Ag3PO4 and SnS2, respectively. The carbon source for the CO product is verified using a 13CO2 isotopic experiment. Moreover, by tracing the peak at ∼1190 cm−1 in the dark and under light irradiation, in situ diffuse reflectance infrared Fourier transform spectroscopy demonstrates that the CO2 reduction pathway goes through the COOH* intermediate.

Designing an organic polymer photocatalyst for efficient hydrogen evolution with visible and near-infrared (NIR) light activity is still a major challenge. Unlike the common behavior of gradually increasing the charge recombination while shrinking the bandgap, we present here a series of polymer nanoparticles (Pdots) based on ITIC and BTIC units with different π-linkers between the acceptor-donor-acceptor (A-D-A) repeated moieties of the polymer. These polymers act as an efficient single polymer photocatalyst for H2 evolution under both visible and NIR light, without combining or hybridizing with other materials. Importantly, the difluorothiophene (ThF) π-linker facilitates the charge transfer between acceptors of different repeated moieties (A-D-A-(π-Linker)-A-D-A), leading to the enhancement of charge separation between D and A. As a result, the PITIC-ThF Pdots exhibit superior hydrogen evolution rates of 279 µmol/h and 20.5 µmol/h with visible (>420 nm) and NIR (>780 nm) light irradiation, respectively. Furthermore, PITIC-ThF Pdots exhibit a promising apparent quantum yield (AQY) at 700 nm (4.76%).

Tin monosulfide (SnS) is a promising light-harvesting material for solar cell applications, owing to its potential for large-scale production, cost-effectiveness, eco-friendly source materials, and long-term stability. However, SnS crystallizes in an orthorhombic structure, which results in a highly anisotropic charge transport behavior. Tailoring the crystallographic orientation of the SnS absorber layer plays a critical role in the enhancement of the transfer of charge carriers and the power conversion efficiency (PCE). By controlling the substrate tilting angle and temperature ramp rate in vapor transport deposition, the crystal growth orientation was tuned to a preferred direction which significantly suppressed the unfavorable (040) crystallographic plane. Through the combination of these two approaches, the PCE could be increased from 0.11% to 2%. The effect of the tilting angle was numerically simulated to investigate its role in controlling the film uniformity and directing the film growth. In addition, the correlation between the texture coefficient of the (040) plane and the charge transport properties was determined by a combination of analytical methods such as device performance studies, electrochemical impedance spectroscopy, along with transient photovoltage, space-charge-limited current, and dark current measurements. These techniques were blended together to prove that the marked improvement in PCE can be ascribed to a reduced charge recombination (in both SnS bulk and interfaces) and an enhanced hole mobility.

Bi doped Mg2Si0.4Sn0.6 had been synthesised in a high energy ball mill followed by compaction using a sintering hot press. The structural and compositional characterization of sintered mass indicated the formation of a highly densified single-phase product. The microstructure of the hot-pressed samples had been critically assessed. Thermoelectric properties were measured between room temperature and 723 K. A decrease in electrical conductivity was found with the increase in temperature but the Seebeck coefficient showed a reverse trend justifying the attainment of degenerate semiconducting behaviour. Meanwhile, the lattice thermal conductivity was subdued to 1.5 W/mK at 623 K. However, the highest zT value of 0.8 was achieved at 723 K. Moreover, the detailed X-ray photoelectron spectroscopic analysis was carried for the determination of binding energy of the constituent elements in the experimental alloy; it also provided the correct estimation of atomic percentage of the concerned elements. The Raman spectrum revealed a shift in F2g peak with respect to that of Mg2Sn and Mg2Si in correspondence with the composition of the synthesised alloy. The synthesised alloy showed micro and nano hardness of 3.7 and 4.03 GPa respectively, which implies that good mechanical strength could be achieved in the synthesised alloy.