Hammad Elsayed, M, Abdellah M, Alhakemy AZ, Mekhemer IMA, Aboubakr AEA, Chen B-H, Sabbah A, Lin K-H, Chiu W-S, Lin S-J, Chu C-Y, Lu C-H, Yang S-D, Mohamed MG, Kuo S-W, Hung C-H, Chen L-C, Chen K-H, Chou H-H.
2024.
Overcoming small-bandgap charge recombination in visible and NIR-light-driven hydrogen evolution by engineering the polymer photocatalyst structure, 2024. Nature Communications. 15(1):707.
AbstractDesigning an organic polymer photocatalyst for efficient hydrogen evolution with visible and near-infrared (NIR) light activity is still a major challenge. Unlike the common behavior of gradually increasing the charge recombination while shrinking the bandgap, we present here a series of polymer nanoparticles (Pdots) based on ITIC and BTIC units with different π-linkers between the acceptor-donor-acceptor (A-D-A) repeated moieties of the polymer. These polymers act as an efficient single polymer photocatalyst for H2 evolution under both visible and NIR light, without combining or hybridizing with other materials. Importantly, the difluorothiophene (ThF) π-linker facilitates the charge transfer between acceptors of different repeated moieties (A-D-A-(π-Linker)-A-D-A), leading to the enhancement of charge separation between D and A. As a result, the PITIC-ThF Pdots exhibit superior hydrogen evolution rates of 279 µmol/h and 20.5 µmol/h with visible (>420 nm) and NIR (>780 nm) light irradiation, respectively. Furthermore, PITIC-ThF Pdots exhibit a promising apparent quantum yield (AQY) at 700 nm (4.76%).
Han, HC, Tseng CA, Du CY, A.Ganguly, Chong CW, Wang SB, Lin CF, Chang SH, Su CC, Lee JH, Chen KH, Chen LC.
2012.
Enhancing efficiency with fluorinated interlayer in small molecule organic solar cell. J. Mater. Chem.. 22:22899.
Han, HC, Chong CW, Wang SB, Heh D, Tseng CA, Huang YF, Chattopadhyay S, Chen KH, Lin CF, Lee JH, Chen LC.
2013.
High K nanophase zinc oxide on biomimetic silicon nanotip array as super-capacitors. Nano Letters. 13:1422-1428.
Ho, T-T, Yang Z-L, Fu F-Y, Jokar E, Hsu H-C, Liu P-C, Quadir S, Cheng-YingChen, Chiu Y-P, Wu C-I, Chen K-H, Chen L-C.
2022.
Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells, 2022. ACS Applied Energy MaterialsACS Applied Energy Materials. 5(11):14531-14540.: American Chemical Society
Abstractn/a
Ho, T-T, Jokar E, Quadir S, Chen R-S, Liu F-C, Cheng-YingChen, Chen K-H, Chen L-C.
2022.
Enhancing the photovoltaic properties of SnS-Based solar cells by crystallographic orientation engineering, 2022. Solar Energy Materials and Solar Cells. 236:111499.
AbstractTin monosulfide (SnS) is a promising light-harvesting material for solar cell applications, owing to its potential for large-scale production, cost-effectiveness, eco-friendly source materials, and long-term stability. However, SnS crystallizes in an orthorhombic structure, which results in a highly anisotropic charge transport behavior. Tailoring the crystallographic orientation of the SnS absorber layer plays a critical role in the enhancement of the transfer of charge carriers and the power conversion efficiency (PCE). By controlling the substrate tilting angle and temperature ramp rate in vapor transport deposition, the crystal growth orientation was tuned to a preferred direction which significantly suppressed the unfavorable (040) crystallographic plane. Through the combination of these two approaches, the PCE could be increased from 0.11% to 2%. The effect of the tilting angle was numerically simulated to investigate its role in controlling the film uniformity and directing the film growth. In addition, the correlation between the texture coefficient of the (040) plane and the charge transport properties was determined by a combination of analytical methods such as device performance studies, electrochemical impedance spectroscopy, along with transient photovoltage, space-charge-limited current, and dark current measurements. These techniques were blended together to prove that the marked improvement in PCE can be ascribed to a reduced charge recombination (in both SnS bulk and interfaces) and an enhanced hole mobility.
Hsiao, CL, Liu TW, Wu CT, Hsu HC, Chen* LC, Hsiao WY, Yang CC, Gällström A, Holtz P, Hsu GM, Chen* KH.
2008.
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment. Appl. Phys. Lett.. 92:111914.
Hsiao, CL, Chen JT, Hsu HC, Liao YC, Tseng PH, Chen YT, Feng ZC, Tu LW, Chou MC, Chen LC, Chen KH.
2010.
Heteroepitaxy of m-plane (1010) InN on (100)-LiAlO2 substrates and its strong anisotropic optical behaviors. ,J. Appl. Phys.. 107:073502.