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Fu, F-Y, Shown I, Li C-S, Raghunath P, Lin T-Y, Billo T, Wu H-L, Wu C-I, Chung P-W, Lin M-C, Chen L-C, Chen K-H.  2019.  KSCN-induced Interfacial Dipole in Black TiO2 for Enhanced Photocatalytic CO2 Reduction, 2019. ACS Applied Materials & InterfacesACS Applied Materials & Interfaces. 11(28):25186-25194.: American Chemical Society AbstractWebsite
Fu, F-Y, Fan C-C, Qorbani M, Huang C-Y, Kuo P-C, Hwang J-S, Shu G-J, Chang S-M, Wu H-L, Wu C-I, Chen K-H, Chen L-C.  2022.  Selective CO2-to-CO photoreduction over an orthophosphate semiconductor via the direct Z-scheme heterojunction of Ag3PO4 quantum dots decorated on SnS2 nanosheets, 2022. Sustainable Energy & Fuels. 6(19):4418-4428.: The Royal Society of Chemistry AbstractWebsite

Direct Z-scheme heterojunctions are widely used for photocatalytic water splitting and CO2 reduction due to facilitating well-separated photogenerated charge carriers and spatial isolation of redox reactions. Here, using a facile two-step hydrothermal and ion-exchange method, we uniformly decorate silver orthophosphate (i.e., Ag3PO4) quantum dots with an average characteristic size of ∼10 nm over tin(iv) sulphide (i.e., SnS2) nanosheets to form a 0D/2D heterojunction. The direct Z-scheme mechanism, i.e. charge transport for efficient electron (from SnS2) and hole (from Ag3PO4) recombination, is confirmed by the following experiments: (i) ultraviolet and X-ray photoelectron spectroscopies; (ii) photodeposition of Pt and PbO2 nanoparticles on reduction and oxidation sites, respectively; (iii) in situ X-ray photoelectron spectroscopy; and (iv) electron paramagnetic resonance spectroscopy. Owing to the photoreduction properties of Ag3PO4 with orthophosphate vacancies, Z-scheme charge carrier transfer, and efficient exciton dissociation, an optimized heterojunction shows a high CO2-to-CO reduction yield of 18.3 μmol g−1 h−1 with an illustrious selectivity of ∼95% under light illumination, which is about 3.0 and 47.8 times larger than that of Ag3PO4 and SnS2, respectively. The carbon source for the CO product is verified using a 13CO2 isotopic experiment. Moreover, by tracing the peak at ∼1190 cm−1 in the dark and under light irradiation, in situ diffuse reflectance infrared Fourier transform spectroscopy demonstrates that the CO2 reduction pathway goes through the COOH* intermediate.

Fu, SP, Yu CJ, Chen TT, Hsu GM, Chen MJ, Chen* LC, Chen KH, Chen YF.  2007.  Anomalous optical properties of InN nanobelts: evidence of surface band bending and photoelastic effect. Adv. Mater.. 19:4524-4529.
Ganguly, A, Chen CP, Lai YT, Kuo CC, Hsu CW, Chen* KH, Chen* LC.  2009.  Functionalized GaN nanowires-based electrode for direct label-free voltammetric detection of DNA hybridization. J. Mater. Chem.. 19:928–933.
and H.M. Tsai, Jan CJ, Chiou JW, Pong* WF, Chen KH, et al.  2001.  Electronic and bonding structures of amorphous Si-C-N thin films by X-ray-absorption spectroscopy. Appl. Phys. Lett.. 79:2393-2395.
Hammad Elsayed, M, Abdellah M, Alhakemy AZ, Mekhemer IMA, Aboubakr AEA, Chen B-H, Sabbah A, Lin K-H, Chiu W-S, Lin S-J, Chu C-Y, Lu C-H, Yang S-D, Mohamed MG, Kuo S-W, Hung C-H, Chen L-C, Chen K-H, Chou H-H.  2024.  Overcoming small-bandgap charge recombination in visible and NIR-light-driven hydrogen evolution by engineering the polymer photocatalyst structure, 2024. 15(1):707. AbstractWebsite

Designing an organic polymer photocatalyst for efficient hydrogen evolution with visible and near-infrared (NIR) light activity is still a major challenge. Unlike the common behavior of gradually increasing the charge recombination while shrinking the bandgap, we present here a series of polymer nanoparticles (Pdots) based on ITIC and BTIC units with different π-linkers between the acceptor-donor-acceptor (A-D-A) repeated moieties of the polymer. These polymers act as an efficient single polymer photocatalyst for H2 evolution under both visible and NIR light, without combining or hybridizing with other materials. Importantly, the difluorothiophene (ThF) π-linker facilitates the charge transfer between acceptors of different repeated moieties (A-D-A-(π-Linker)-A-D-A), leading to the enhancement of charge separation between D and A. As a result, the PITIC-ThF Pdots exhibit superior hydrogen evolution rates of 279 µmol/h and 20.5 µmol/h with visible (>420 nm) and NIR (>780 nm) light irradiation, respectively. Furthermore, PITIC-ThF Pdots exhibit a promising apparent quantum yield (AQY) at 700 nm (4.76%).

Han, HC, Chong CW, Wang SB, Heh D, Tseng CA, Huang YF, Chattopadhyay S, Chen KH, Lin CF, Lee JH, Chen LC.  2013.  High K nanophase zinc oxide on biomimetic silicon nanotip array as super-capacitors. Nano Letters. 13:1422-1428.
Han, HC, Lo HC, Wu CY, Chen KH, Chen LC, Ou KL, Hosseinkhani* H.  2015.  Nano-textured Fluidic Biochip as Biological Filter for Selective Survival of Neuronal Cells. J. Biomed. Mater. Res. A . 103:2015.
Han, HC, Tseng CA, Du CY, A.Ganguly, Chong CW, Wang SB, Lin CF, Chang SH, Su CC, Lee JH, Chen KH, Chen LC.  2012.  Enhancing efficiency with fluorinated interlayer in small molecule organic solar cell. J. Mater. Chem.. 22:22899.
Ho, T-T, Jokar E, Quadir S, Chen R-S, Liu F-C, Cheng-YingChen, Chen K-H, Chen L-C.  2022.  Enhancing the photovoltaic properties of SnS-Based solar cells by crystallographic orientation engineering, 2022. Solar Energy Materials and Solar Cells. 236:111499. AbstractWebsite

Tin monosulfide (SnS) is a promising light-harvesting material for solar cell applications, owing to its potential for large-scale production, cost-effectiveness, eco-friendly source materials, and long-term stability. However, SnS crystallizes in an orthorhombic structure, which results in a highly anisotropic charge transport behavior. Tailoring the crystallographic orientation of the SnS absorber layer plays a critical role in the enhancement of the transfer of charge carriers and the power conversion efficiency (PCE). By controlling the substrate tilting angle and temperature ramp rate in vapor transport deposition, the crystal growth orientation was tuned to a preferred direction which significantly suppressed the unfavorable (040) crystallographic plane. Through the combination of these two approaches, the PCE could be increased from 0.11% to 2%. The effect of the tilting angle was numerically simulated to investigate its role in controlling the film uniformity and directing the film growth. In addition, the correlation between the texture coefficient of the (040) plane and the charge transport properties was determined by a combination of analytical methods such as device performance studies, electrochemical impedance spectroscopy, along with transient photovoltage, space-charge-limited current, and dark current measurements. These techniques were blended together to prove that the marked improvement in PCE can be ascribed to a reduced charge recombination (in both SnS bulk and interfaces) and an enhanced hole mobility.

Ho, T-T, Yang Z-L, Fu F-Y, Jokar E, Hsu H-C, Liu P-C, Quadir S, Cheng-YingChen, Chiu Y-P, Wu C-I, Chen K-H, Chen L-C.  2022.  Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells, 2022. ACS Applied Energy MaterialsACS Applied Energy Materials. 5(11):14531-14540.: American Chemical Society AbstractWebsite
Hong, WK, Chen KH, Chen LC, Tarntair FG, Chen KJ, Lin JB, Cheng* HC.  2001.  Fabrication and characterization of carbon nanotubes triodes. Jpn. J. Appl. Phys.. 40:3468-3473.
Horng, YY, Hsu YK, Chen CC, Chen LC, Chen* KH.  2009.  Direct-growth of polyaniline nanowires for enzyme-immobilization and glucose detection. Electrochem. Comm.. 11:850-853.
Horng, YY, Lu YC, Hsu YK, Chen CC, Chen LC, Chen* KH.  2010.  Flexible supercapacitor based on polyaniline nanowires/carbon cloth with both high gravimetric and area-normalized capacitance. J. Power Sources. 195:4418-4422.
Howlader, S, Vasudevan R, Jarwal B, Gupta S, Chen K-H, Sachdev K, Banerjee MK.  2020.  Microstructure and mechanical stability of Bi doped Mg2Si0.4Sn0.6 thermoelectric material, 2020. 818:152888. AbstractWebsite

Bi doped Mg2Si0.4Sn0.6 had been synthesised in a high energy ball mill followed by compaction using a sintering hot press. The structural and compositional characterization of sintered mass indicated the formation of a highly densified single-phase product. The microstructure of the hot-pressed samples had been critically assessed. Thermoelectric properties were measured between room temperature and 723 K. A decrease in electrical conductivity was found with the increase in temperature but the Seebeck coefficient showed a reverse trend justifying the attainment of degenerate semiconducting behaviour. Meanwhile, the lattice thermal conductivity was subdued to 1.5 W/mK at 623 K. However, the highest zT value of 0.8 was achieved at 723 K. Moreover, the detailed X-ray photoelectron spectroscopic analysis was carried for the determination of binding energy of the constituent elements in the experimental alloy; it also provided the correct estimation of atomic percentage of the concerned elements. The Raman spectrum revealed a shift in F2g peak with respect to that of Mg2Sn and Mg2Si in correspondence with the composition of the synthesised alloy. The synthesised alloy showed micro and nano hardness of 3.7 and 4.03 GPa respectively, which implies that good mechanical strength could be achieved in the synthesised alloy.

Hsiao, CL, Chen JT, Hsu HC, Liao YC, Tseng PH, Chen YT, Feng ZC, Tu LW, Chou MC, Chen LC, Chen KH.  2010.  Heteroepitaxy of m-plane (1010) InN on (100)-LiAlO2 substrates and its strong anisotropic optical behaviors. ,J. Appl. Phys.. 107:073502.
Hsiao, CL, Liu TW, Wu CT, Hsu HC, Chen* LC, Hsiao WY, Yang CC, Gällström A, Holtz P, Hsu GM, Chen* KH.  2008.  High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment. Appl. Phys. Lett.. 92:111914.
Hsiao, CL, Hsu HC, Chen* LC, Wu CT, Chen CW, Chen M, Tu LW, Chen KH.  2007.  Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors. Appl. Phys. Lett.. 91:181912.
Hsieh, CH, Huang YS, Kuo PF, Chen YF, Chen LC, Wu JJ, Chen KH, Tiong KK.  2000.  Piezoreflectance study of silicon carbon nitride nanorods. Appl. Phys. Lett.. 76:2044-2046.
Hsieh, CH, Huang YS, Tiong KK, Fan CW, Chen YF, Chen LC, Wu JJ, Chen KH.  2000.  Piezoreflectance study of a Fe-containing silicon carbon nitride crystalline film. J. Appl. Phys.. 87:280-284.
Hsieh, YP, Chen HY, Lin MZ, Shiu SC, Hofmann M, Chern MY, Jia X, Yang YJ, Chang HJ, Huang HM, Tseng SC, Chen* LC, Chen KH, Lin CF, Liang* CT, Chen YF.  2009.  Electroluminescence from ZnO/Si-nanotips light emitting diodes. Nano Letters. 9:1839.
Hsu, CW, A.Ganguly, Chen CP, Kuo CC, Paskov PP, Holtz PO, Chen KH, Chen LC.  2011.  Optical properties of functionalized GaN nanowires. J. Appl. Phys.. 109:053523.
Hsu, CW, Ganguly A, Liang CH, Hung YY, Wu CT, Hsu GM, Chen YF, Chen CC, Chen* KH, Chen* LC.  2008.  Enhanced emission of InGaN nanowires embedded with self-assembled quantum dots. Adv. Func. Mater.. 18:938.
Hsu, YK, Chen YC, Lin YG, Chen LC, Chen KH.  2011.  Reversible phase transformation of MnO2nanosheets in electrochemical capacitor investigated by in-situ Raman spectroscopy. Chem. Comm.. 47:1252-1254.
Hsu, CH, Huang YF, Chen LC, Chattopadhyay* S, Chen KH, Lo HC, Chen CF.  2006.  Morphology control of Si nanotips fabricated by electron cyclotron resonance plasma etching. J. Vac. Sci. Technol. . B24:308-311.