Sainbileg, B, Lai Y-R, Chen L-C, Hayashi M.
2019.
The dual-defective SnS2 monolayers: promising 2D photocatalysts for overall water splitting, 2019. Physical Chemistry Chemical Physics. 21(48):26292-26300.: The Royal Society of Chemistry
AbstractPhotocatalytic water splitting is a promising way to produce hydrogen fuel from solar energy. In this regard, the search for new photocatalytic materials that can efficiently split water into hydrogen is essential. Here, using first-principles simulations, we demonstrate that the dual-defective SnS2 (Ni-SnS2-VS), by both single-atom nickel doping and sulfur monovacancies, becomes a promising two-dimensional photocatalyst compared with SnS2. The Ni-SnS2-VS monolayer, in particular, exhibits a suitable band alignment that perfectly overcomes the redox potentials for overall water splitting. The dual-defective monolayer displays remarkable photocatalytic activity, a spatially separated carrier, a broadened optical absorption spectrum, and enhanced adsorption energy of H2O. Therefore, the dual-defective SnS2 monolayer can serve as an efficient photocatalyst for overall water splitting to produce hydrogen fuel. Furthermore, a novel dual-defect method can be an effective strategy to enhance the photocatalytic behavior of 2D materials; it may pave inroads in the development of solar-fuel generation.
Bayikadi, KS, Sankar R, Wu CT, Xia C, Chen Y, Chen L-C, Chen K-H, Chou F-C.
2019.
Enhanced thermoelectric performance of GeTe through in situ microdomain and Ge-vacancy control, 2019. Journal of Materials Chemistry A. 7(25):15181-15189.: The Royal Society of Chemistry
AbstractA highly reproducible sample preparation method for pure GeTe in a rhombohedral structure without converting to the cubic structure up to ∼500 °C is reported to show control of the Ge-vacancy level and the corresponding herringbone-structured microdomains. The thermoelectric figure-of-merit (ZT) for GeTe powder could be raised from ∼0.8 to 1.37 at high temperature (HT) near ∼500 °C by tuning the Ge-vacancy level through the applied reversible in situ route, which made it highly controllable and reproducible. The enhanced ZT of GeTe was found to be strongly correlated with both its significantly increased Seebeck coefficient (∼161 μV K−1 at 500 °C) and reduced thermal conductivity (∼2.62 W m−1 K−1 at 500 °C) for a sample with nearly vacancy-free thicker herringbone-structured microdomains in the suppressed rhombohedral-to-cubic structure phase transformation. The microdomain and crystal structures were identified with HR-TEM (high-resolution transmission electron microscopy) and powder X-ray diffraction (XRD), while electron probe micro-analysis (EPMA) was used to confirm the stoichiometry changes of Ge : Te. Theoretical calculations for GeTe with various Ge-vacancy levels suggested that the Fermi level shifts toward the valence band as a function of increasing the Ge-vacancy level, which is consistent with the increased hole-type carrier concentration (n) and effective mass (m*) deduced from the Hall measurements. The uniquely prepared sample of a near-vacancy-free GeTe in a rhombohedral structure at high temperature favoured an enhanced Seebeck coefficient in view of the converging L- and Σ-bands of the heavy effective mass at the Fermi level, while the high density domain boundaries for the domain of low carrier density were shown to reduce the total thermal conductivity effectively.
Chang, H-C, You H-J, Sankar R, Yang Y-J, Chen L-C, Chen K-H.
2019.
Enhanced Thermoelectric Performance via Oxygen Manipulation in BiCuTeO, 2019. MRS Advances. 4(8):499-505.: Materials Research Society
AbstractBiCuTeO is a potential thermoelectric material owing to its low thermal conductivity and high carrier concentration. However, the thermoelectric performance of BiCuTeO is still below average and has much scope for improvement. In this study, we manipulated the nominal oxygen content in BiCuTeO and synthesized BiCuTeOx (x = 0.94–1.06) bulks by a solid-state reaction and pelletized them by a cold-press method. The power factor was enhanced by varying the nominal oxygen deficiency due to the increased Seebeck coefficient. The thermal conductivity was also reduced due to the decrease in lattice thermal conductivity owing to the small grain size generated by the optimal nominal oxygen content. Consequently, the ZT value was enhanced by ∼11% at 523 K for stoichiometric BiCuTeO0.94 compared to BiCuTeO. Thus, optimal oxygen manipulation in BiCuTeO can enhance the thermoelectric performance. This study can be applied to developing oxides with high thermoelectric performances.
Sabhapathy, P, Liao C-C, Chen W-F, Chou T-chin, Shown I, Sabbah A, Lin Y-G, Lee J-F, Tsai M-K, Chen K-H, Chen L-C.
2019.
Highly efficient nitrogen and carbon coordinated N–Co–C electrocatalysts on reduced graphene oxide derived from vitamin-B12 for the hydrogen evolution reaction, 2019. Journal of Materials Chemistry A. 7(12):7179-7185.: The Royal Society of Chemistry
AbstractExploring electrocatalysts composed of earth-abundant elements for a highly efficient hydrogen evolution reaction (HER) is scientifically and technologically important for electrocatalytic water splitting. In this work, we report HER properties of acid treated pyrolyzed vitamin B12 supported on reduced graphene oxide (B12/G800A) that shows an extraordinarily enhanced catalytic activity with low overpotential (115 mV vs. RHE at 10 mA cm−2), which is better than that of most traditional nonprecious metal catalysts in acidic media. Stability tests through long-term potential cycles and at a constant current density confirm the exceptional durability of the catalyst. Notably, the B12/G800A catalyst exhibits extremely high turnover frequencies per cobalt site in acid, for example, 0.85 and 11.46 s−1 at overpotentials of 100 and 200 mV, respectively, which are higher than those reported for other scalable non-precious metal HER catalysts. Moreover, it has been conjectured that the covalency of Co–C and Co–N bonds affects HER activities by comparing the extended X-ray absorption fine structure (EXAFS) spectra of the B12/G800A. High-temperature treatment can modify the Co-corrin structure of B12 to form Co–C bonds along with Co–N, which broadens the band of cobalt, essentially lowering the d-band center from its Fermi level. The lower d-band center leads to a moderate hydrogen binding energy, which is favorable for hydrogen adsorption and desorption.
Fu, F-Y, Shown I, Li C-S, Raghunath P, Lin T-Y, Billo T, Wu H-L, Wu C-I, Chung P-W, Lin M-C, Chen L-C, Chen K-H.
2019.
KSCN-induced Interfacial Dipole in Black TiO2 for Enhanced Photocatalytic CO2 Reduction, 2019. ACS Applied Materials & InterfacesACS Applied Materials & Interfaces. 11(28):25186-25194.: American Chemical Society
Abstractn/a
Prem Kumar, DS, Tippireddy S, Ramakrishnan A, Chen K-H, Malar P, Mallik RC.
2019.
Thermoelectric and electronic properties of chromium substituted tetrahedrite, 2019. Semiconductor Science and Technology. 34(3):035017.: IOP Publishing
AbstractCr substituted tetrahedrites with the chemical formula Cu12−xCrxSb4S13 (x = 0.15, 0.25, 0.35, 0.5, 0.75, 1.0) have been synthesised for thermoelectric study. Cr substitutes at the Cu site to optimize the thermoelectric properties and achieve a higher figure of merit (zT). X-Ray diffraction (XRD) analysis revealed that the tetrahedrite is the major phase with minor impurity phases. Electron probe microanalysis (EPMA) shows the formation of tetrahedrite main phase with near stoichiometry and the presence of Cu3SbS4, CuSbS2 and Sb as secondary phases. X-ray photoelectron spectroscopy (XPS) shows the oxidation state of Cu, Sb and S as +1, +3 and −2, respectively, whereas for Cr, it could not be identified. Temperature-dependent magnetic susceptibility of sample x = 0.75 shows antiferromagnetic correlation originating from the Cr ion. The calculated effective magnetic moment of 2.83 μB per Cr atom indicates the presence of Cr+4 in this sample. The decrease in the electrical resistivity upon doping indicates the compensation of holes due to the substitution of Cr at the Cu site. But the x = 0.35 sample is not following the trend due to larger compensation of holes with an activation energy of 124.6 meV. The temperature-dependent behaviour of electrical resistivity shows the shift in the Fermi level from the valance band towards the band gap. The absolute Seebeck coefficient is positive throughout the temperature range and follows a similar trend as that of electrical resistivity, with the exception of the x = 0.35 sample. The electronic thermal conductivity reduces due to hole compensation caused by Cr substitution. Moreover, the substitution of Cr effectively reduces the lattice thermal conductivity due to point defect scattering of phonons. A maximum zT of 1.0 is achieved for sample x = 0.35 at 700 K.
Das, S, Valiyaveettil SM, Chen K-H, Suwas S, Mallik RC.
2019.
Thermoelectric properties of Mn doped BiCuSeO, 2019. Materials Research Express. 6(8):086305.: IOP Publishing
AbstractBiCuSeO is a promising thermoelectric material having earth-abundant non-toxic constituents and favourable thermoelectric properties like ultra-low thermal conductivity. In this study, Mn+2 has been introduced at the Bi+3 site to increase hole concentration as well as Seebeck coefficient, through aliovalent doping and magnetic impurity incorporation respectively. Samples were prepared through two-step solid state synthesis with the composition Bi1-xMnxCuSeO (x = 0.0, 0.04, 0.06, 0.08, 0.10 and 0.12). X-ray diffraction patterns confirmed the tetragonal (space group: P4/nmm) crystal structure of BiCuSeO as well as phase purity of the samples. The Seebeck coefficient and electrical resistivity had a decreasing trend with increasing doping fraction owing to the generation of charge carriers. The samples with x = 0.04 and 0.06 showed temperature independent Seebeck coefficient above 523 K, which is a signature of small polaron hopping. While the Seebeck coefficient of the samples with x = 0.08, 0.10 and 0.12 increased above 523 K due to the combination of localized and extended states. The thermal conductivity was dominated by the lattice part of the thermal conductivity. As a result of moderate Seebeck coefficient and low electrical resistivity, the highest power factor of 0.284 mW m−1-K2 was obtained for the Bi0.92Mn0.08CuSeO at 773 K, leading to a maximum zT of 0.4 at 773.
Wei-ChaoChen, Cheng-YingChen, Lin Y-R, Chang J-K, Chen C-H, Chiu Y-P, Wu C-I, Chen K-H, Chen L-C.
2019.
Interface engineering of CdS/CZTSSe heterojunctions for enhancing the Cu2ZnSn(S,Se)4 solar cell efficiency. Materials Today Energy. 13:256-266.
AbstractInterface engineering of CdS/CZTS(Se) is an important aspect of improving the performance of buffer/absorber heterojunction combination. It has been demonstrated that the crossover phenomenon due to the interface recombination can be drastically eliminated by interface modification. Therefore, in-depth studies across the CdS/CZTS(Se) junction properties, as well as effective optimization processes, are very crucial for achieving high-efficiency CZTSSe solar cells. Here, we present a comprehensive study on the effects of soft-baking (SB) temperature on the junction properties and the corresponding optoelectronic and interface-structural properties. Based on in-depth photoemission studies corroborated with structural and composition analysis, we concluded that interdiffusion and intermixing of CZTSSe and CdS phases occurred on the Cu-poor surface of CZTSSe at elevated SB temperatures, and the interface dipole moments induced by electrostatic potential fluctuation were thus significantly eliminated. In contrast, with low SB temperature, the CdS/CZTSSe heterojunction revealed very sharp interface with very short interdiffusion, forming interface dipole moments and drastically deteriorating device performance. These post thermal treatments also significantly suppress defect energy level of interface measured by admittance spectroscopy from 294 to 109 meV due to CdS/CZTSSe interdiffusion. Meanwhile, the interdiffusion effects on the shift of valence band maximum, conduction band minimum and band offset across the heterojunction of thermally treated CdS/CZTSSe interface are spatially resolved at the atomic scale by measuring the local density of states with cross-sectional scanning tunneling microscopy and spectroscopy. A significant enhancement in the power conversion efficiency from 4.88% to 8.48% is achieved by a facile interface engineering process allowing a sufficient intermixing of CdS/Cd and CZTSSe/Se phases without detrimental recombination centers.