Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering | Kuei-Hsien Chen

Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering

Citation:: Junaid, M, Lundin D, Palisaitis J, Hsiao CL, Darakchieva V, Jensen J, Persson POA, Sandstrom P, Lai WJ, Chen LC, Chen KH, Helmersson U, Hultman L, Birch J. 2011. Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering. J. Appl. Phys.. 110:123519.