@article {1725,
	title = {Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering},
	journal = {J. Appl. Phys.},
	volume = {110},
	year = {2011},
	pages = {123519},
	author = {M. Junaid and D. Lundin and J. Palisaitis and C. L. Hsiao and V. Darakchieva and J. Jensen and P. O. A. Persson and P. Sandstrom and W.J. Lai and L. C. Chen and K. H. Chen and U. Helmersson and L. Hultman and J. Birch}
}
