Kuei-Hsien Chen

High thermoelectric performance is a material challenge associated mainly with the manipulation of lattice dynamics to obtain extrinsic phonon transport routes, which can make the lattice thermal conductivity (κlat) intrinsically low by introducing multiple scattering mechanisms. The present study shows that the lattice-strain-induced phonon scattering resulting from microstructural distortions in GeTe-based compounds can enable ultralow lattice thermal conductivity. The unusual lattice shrinkage, W interstitials, W nanoprecipitates, and heavy elemental mass, in Ge0.85Sb0.1W0.05Te culminate in an ultralow lattice thermal conductivity of ∼0.2 W m−1 K−1 at 825 K. Microstructural distortions in this Sb/W co-doped GeTe are found to be primarily associated with shorter W–Te bonding owing to the anomalous effect of the higher electronegativity of the W atoms. Furthermore, the increased electrical conductivity (σ) resulting from the enhanced vacancy formation caused by W doping and W interstitials synergistically contributes to optimization of the thermoelectric performance (ZT) to ∼2.93 at 825 K. The thermoelectric efficiency (η) as high as ∼17% has been obtained for a single leg in this composition at an operating temperature of 825 K, with an estimated device ZT value of ∼1.38.

As a lead-free high-performance thermoelectric material, germanium telluride (GeTe) has recently been extensively studied for mid-temperature (500–800 K) applications. The carrier concentration and the thermal conductivity are reduced for vacancy-controlled GeTe compounds compared with pristine GeTe. We explored and optimized the Ge0.9−xSb0.1PxTe (x = 0.01–0.05) material's highest thermoelectric performance at elevated temperatures. Intrinsic Ge vacancy control and manipulation of Ge (+2) with Sb/P (+3) increased the charge contribution to power factor improvement to ∼42 µWcm−1 K−2 while minimizing the lattice thermal contribution to ∼0.4 W/mK. This resulted in an increase in thermoelectric performance of ∼2.4 @ 773 K for the Ge0.88Sb0.1P0.02Te sample. The inclusion of atomically disordered Sb/P ions considerably increases the scattering effects caused by the point defect, whereas stretched grain boundaries reveal the decreased lattice thermal contribution. The current work demonstrates the effectiveness of phosphorus as a co-dopant in increasing the average thermoelectric performance (ZTavg) value over the GeTe operating temperature range.