Qorbani, M, Sabbah A, Lai Y-R, Kholimatussadiah S, Quadir S, Huang C-Y, Shown I, Huang Y-F, Hayashi M, Chen K-H, Chen L-C.
2022.
Atomistic insights into highly active reconstructed edges of monolayer 2H-WSe2 photocatalyst, 2022. Nature Communications. 13(1):1256.
AbstractAscertaining the function of in-plane intrinsic defects and edge atoms is necessary for developing efficient low-dimensional photocatalysts. We report the wireless photocatalytic CO2 reduction to CH4 over reconstructed edge atoms of monolayer 2H-WSe2 artificial leaves. Our first-principles calculations demonstrate that reconstructed and imperfect edge configurations enable CO2 binding to form linear and bent molecules. Experimental results show that the solar-to-fuel quantum efficiency is a reciprocal function of the flake size. It also indicates that the consumed electron rate per edge atom is two orders of magnitude larger than the in-plane intrinsic defects. Further, nanoscale redox mapping at the monolayer WSe2–liquid interface confirms that the edge is the most preferred region for charge transfer. Our results pave the way for designing a new class of monolayer transition metal dichalcogenides with reconstructed edges as a non-precious co-catalyst for wired or wireless hydrogen evolution or CO2 reduction reactions.
Venugopal, B, Syum Z, Yu S-Y, Sabbah A, Shown I, Chu C-W, Chen L-C, Lee C-H, Wu H-L, Chen K-H.
2022.
Enhancing the Areal Capacity and Stability of Cu2ZnSnS4 Anode Materials by Carbon Coating: Mechanistic and Structural Studies During Lithiation and Delithiation, 2022. ACS Omega. 7(11):9152-9163.: American Chemical Society
Abstract
Ho, T-T, Jokar E, Quadir S, Chen R-S, Liu F-C, Cheng-YingChen, Chen K-H, Chen L-C.
2022.
Enhancing the photovoltaic properties of SnS-Based solar cells by crystallographic orientation engineering, 2022. Solar Energy Materials and Solar Cells. 236:111499.
AbstractTin monosulfide (SnS) is a promising light-harvesting material for solar cell applications, owing to its potential for large-scale production, cost-effectiveness, eco-friendly source materials, and long-term stability. However, SnS crystallizes in an orthorhombic structure, which results in a highly anisotropic charge transport behavior. Tailoring the crystallographic orientation of the SnS absorber layer plays a critical role in the enhancement of the transfer of charge carriers and the power conversion efficiency (PCE). By controlling the substrate tilting angle and temperature ramp rate in vapor transport deposition, the crystal growth orientation was tuned to a preferred direction which significantly suppressed the unfavorable (040) crystallographic plane. Through the combination of these two approaches, the PCE could be increased from 0.11% to 2%. The effect of the tilting angle was numerically simulated to investigate its role in controlling the film uniformity and directing the film growth. In addition, the correlation between the texture coefficient of the (040) plane and the charge transport properties was determined by a combination of analytical methods such as device performance studies, electrochemical impedance spectroscopy, along with transient photovoltage, space-charge-limited current, and dark current measurements. These techniques were blended together to prove that the marked improvement in PCE can be ascribed to a reduced charge recombination (in both SnS bulk and interfaces) and an enhanced hole mobility.
Ho, T-T, Yang Z-L, Fu F-Y, Jokar E, Hsu H-C, Liu P-C, Quadir S, Cheng-YingChen, Chiu Y-P, Wu C-I, Chen K-H, Chen L-C.
2022.
Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells, 2022. ACS Applied Energy MaterialsACS Applied Energy Materials. 5(11):14531-14540.: American Chemical Society
Abstractn/a
Quadir, S, Qorbani M, Sabbah A, Wu T-S, kumar Anbalagan A, Chen W-T, Valiyaveettil SM, Thong H-T, Wang C-W, Cheng-YingChen, Lee C-H, Chen K-H, Chen L-C.
2022.
Short- and Long-Range Cation Disorder in (AgxCu1–x)2ZnSnSe4 Kesterites, 2022. Chemistry of Materials. : American Chemical Society
Abstract
Shelke, AR, Wang H-T, Chiou J-W, Shown I, Sabbah A, Chen K-H, Teng S-A, Lin I-A, Lee C-C, Hsueh H-C, Liang Y-H, Du C-H, Yadav PL, Ray SC, Hsieh S-H, Pao C-W, Tsai H-M, Chen C-H, Chen K-H, Chen L-C, Pong W-F.
2022.
Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement. Small. n/a:2105076., Number n/a
AbstractAbstract Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,β resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2. Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2.