Kuei-Hsien Chen

and J. S. Hwang*, Chen KY, Syu WS, Chen SW, Kuo CW, Syu WY, Lin TY, Chiang HP, Chattopadhyay S, Chen KH, Chen LC.  2010.  Preparation of silver nano-particle decorated silica nanowires on quartz as reusable versatile nano-structured surface-enhanced Raman scattering substrates. Nanotechnology. 21:025502.

J. Wang, K.H. Chen, ME.  1988.  Energy Llocalization in Infrared Multiphoton Excited CF2Cl2 Studied by Time Resolved Raman Spectroscopy. Int. Conf. Quantum Electronics. :496., Tokyo Japan: Tech. Digest

Jana, D, Sun CL, Chen LC, Chen KH.  2013.  Effect of chemical doping of boron and nitrogen on the electronic, optical, and electrochemical properties of carbon nanotubes. Progress in Materials Science. 58:565–635.

Jana, D, Chen LC, Chen CW, Chattopadhyay S, Chen KH.  2007.  A first principles study of the optical properties of BxCy single wall nanotubes. Carbon. 45:1482-1491.

Jana*, D, Chakraborti A, Chen LC, Chen CW, Chen KH.  2009.  A first principles study of the optical properties of CxNy single walled nanotubes. Nanotechnology. 20:175701.

Jarwal, B, Abbas S, Chou T-L, Vailyaveettil SM, Kumar A, Quadir S, Ho T-T, Wong DP, Chen L-C, Chen K-H.  2024.  Boosting Thermoelectric Performance in Nanocrystalline Ternary Skutterudite Thin Films through Metallic CoTe2 Integration, 2024. ACS Applied Materials & InterfacesACS Applied Materials & Interfaces. 16(12):14770-14780.: American Chemical Society AbstractWebsite

Juan, CP, Tsai CC, Chen KH, Chen LC, Cheng HC.  2005.  Effects of high-density oxygen plasma post-treatment on field emission properties of carbon nanotube field-emission displays. Jpn. J. Appl. Phys.. 44:8231-8236.

Juan, CP, Tsai CC, Chen KH, Chen LC, Cheng HC.  2005.  Fabrication and characterization of lateral field emission device based on carbon nanotubes. Jpn. J. Appl. Phys.. 44:2612-2617.

Juan, CP, Chen* KH, et al.  2005.  Improved field-emission properties of carbon nanotube field-emission arrays by controlled density growth of carbon nanotubes. Jap. J. of Appl. Phys.. 44:365-370.

Junaid, M, Lundin D, Palisaitis J, Hsiao CL, Darakchieva V, Jensen J, Persson POA, Sandstrom P, Lai WJ, Chen LC, Chen KH, Helmersson U, Hultman L, Birch J.  2011.  Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al2O3 (0001) by high power impulse magnetron sputtering. J. Appl. Phys.. 110:123519.