Interaction between graphene and the surface of SiO 2

Citation:
Fan, XF, Zheng WT, Chihaia V, Shen ZX, Kuo J-L.  2012.  Interaction between graphene and the surface of SiO 2. Journal of Physics: Condensed Matter. 24:305004., Number 30

Abstract:

The interaction between graphene and a SiO 2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO 2 surface is explained based on a general consideration of the configuration structures of the SiO 2 surface. It is found that the oxygen defect in a SiO 2 surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO 2 surface observed in a lot of experiments.

Notes:

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