@article {0953-8984-24-30-305004,
	title = {Interaction between graphene and the surface of SiO 2},
	journal = {Journal of Physics: Condensed Matter},
	volume = {24},
	number = {30},
	year = {2012},
	note = {n/a},
	pages = {305004},
	abstract = {<p>The interaction between graphene and a SiO 2 surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO 2 surface is explained based on a general consideration of the configuration structures of the SiO 2 surface. It is found that the oxygen defect in a SiO 2 surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO 2 surface observed in a lot of experiments.</p>
},
	url = {http://stacks.iop.org/0953-8984/24/i=30/a=305004},
	author = {X F Fan and Zheng, W.T. and Viorel Chihaia and Z X Shen and Jer-Lai Kuo}
}
