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Chen, KH, Lu CZ, Avilas L, Mazur E, Bloembergen N, Shultz MJ.  1989.  Multiplex Coherent Anti-Stokes Raman Spectroscopy Study of Infrared-multiphoton-excited OCS. J. Chem. Phys.. 91:1462.
Chen, RS, Yang TH, Chen HY, Chen* LC, Chen* KH, Yang YJ, Su CH, Lin CR.  2009.  High-gain photoconductivity in semiconducting InN nanowires. Appl. Phys. Lett.. 95:162112.
Chen, LC, Wu CT, Wu JJ, Chen KH.  2000.  Growth, characterization, and properties of carbon nitride with and without silicon addition. Int. J. of Modern Phys. B14:333-348.
Chen, JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen* KH.  2007.  Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source. J. Phys. Chem. A. 111:6755-6759.
Chen, LC, Chen CK, Wei SL, Bhusari DM, Chen KH, Chen YF, Jong YC, Huang YS.  1998.  Crystalline Silicon Carbon Nitride: A Wide Band Gap Semiconductor. Appl. Phys. Lett.. 72:2463.
Chen, KH, Wang J, Mazur E.  1986.  Raman Spectroscopy of Infrared Multiphoton Excited Molecules. Int. Quantum Electronics Conf.. , San Francisco
Chen, LC, Juan CC, Wu JY, Chen KH, Teng JW.  1996.  On the Optimized Nucleation of Near-Single-Crystal CVD Diamond Film. MRS Symp.. :Vol.416,81.
Chen, RS, Chen HY, Lu CY, Chen CP, Chen LC, Yang YJ, Chen* KH.  2007.  Ultrahigh photocurrent gain in m-axial GaN nanowires. Appl. Phys. Lett.. 91:223106.
Chen, TT, Hsieh YP, Wei CM, Chen* YF, Chen LC, Chen KH, Peng YH, Kuan CH.  2008.  Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures. Nanotechnology. 19:365705.
Chen, KH, Wu JY, Chen LC, Juan CC, Hsu T.  1995.  Epitaxial Growth of Diamond Films for Electronic Applications. the 188th Meeting of the Electrochemical Society. :Vol95-21,p55-69., Chicago
Chen, LC, Chen CK, Bhusari DM, Chen KH, Wei SL, Chen YF, Jong YC, Lin DY, Li CF, Huang YS.  1997.  Growth of Ternary Silicon Carbon Nitride as a New Wide Band Gap Material. MRS Symp.. :Vol.468,31.
Chen, J-C, Chen P-Y, Chen H-Y, Chen K-H.  2018.  Analysis and characterization of an atropisomeric ionomer containing quaternary ammonium groups. Polymer. 141:143-153. AbstractWebsite

Polyethersulfone ionomers containing quaternary ammoniums were prepared for the applications on alkaline anion exchange membrane (AAEM) fuel cells. The ionomers were synthesized from 2,2′-dimethyl-4,4′-biphenyldiol and bis(4-chlorophenyl) sulfone via nucleophilic substitution followed by bromination, quaternization and anion exchange reaction. The biphenyl structure in polymer main chain exhibited atropisomerism after bromination, leading to the anisochronous signals of geminal protons on bromomethyl groups in 1H NMR spectra. Model compounds were synthesized to confirm the atropisomerism by EI mass and 1H NMR spectra. The resonance peaks from five possible repeating units of brominated polyethersulfones in the 1H NMR spectra were identified and discussed in detail. The rotational barriers of biphenyl structures containing brominated methyl groups at 2 and 2′ positions were calculated by density functional theory. The properties of these polyethersulfone anion exchange membranes (AEMs) were characterized. Their IECs ranged from 0.81 to 1.75 mequiv/g. The corresponding water uptakes and dimensional changes were in the ranges of 19–42% and 12–38%, respectively. The tensile strength of an AEM (1.75MQAPES-OH) with an IEC of 1.75 mequiv/g remained 17 MPa even though the water uptake was 42%. The hydroxide conductivity of 1.75MQAPES-OH could reach 51.4 mS/cm at 98%RH and 80 °C. After alkaline stability test for 168 h, the AEMs degraded slightly in terms of their IECs and hydroxide conductivity.

Chen, CP, Ganguly A, Chen RS, Fischer W, Chen LC, Chen KH.  2011.  Ultra-sensitive in situ label-free DNA detection using GaN nanowires-based extended-gate field-effect-transistor sensor. Anal. Chem.. 83:1938-1943.
Chen, HY, Chen RS, Rajan NK, Chang FC, Chen LC, Chen KH, Yang YJ, Reed MA.  2011.  Size-dependent persistent photocurrent and surface band bending in m-axial GaN nanowires. Phys. Rev. B. 84:205443.
Chen, RS, Lu CY, Chen KH, Chen LC.  2009.  Molecule-modulated photoconductivity and gain-amplified selective gas sensing in polar GaN nanowires. Appl. Phys. Lett.. 95:233119.
Chen, KH, Wu JJ, Chen LC, Wen C-Y, Kichambare PD, Tarntair FG, Kuo PF, Chang SW, Chen YF.  2000.  Comparative studies in field emission properties of carbon-based materials. Diamond & Related Materials. 9:1249-1256.
Chen, HM, Chen CK, Lin CC, Liu RS, Yang H, Chang WS, Chen KH, Chan TS, Lee JF, Tsai DP.  2011.  Multi-bandgap-sensitized ZnO nanorod photoelectrode arrays for water splitting: an X-ray absorption spectroscopy approach for the electronic evolution under solar illumination. J. Phys. Chem. C. 115:21971-21980.
Chen, YT, Tsai WC, Chen WY, Hsiao CL, Hsu HC, Chang WH, Hsu TM, Chen KH, Chen LC.  2012.  Growth of sparse arrays of narrow GaNnanorods hosting spectrally stable InGaNquantum disks. Opt. Express. 20:16166-16173.
Chen, WC, Lien HT, Cheng TW, Su C, Chong CW, Ganguly A, Chen KH, Chen* LC.  2015.  Side Group of Poly(3-alkylthiophene)s Controlled Dispersion of Single-Walled Carbon Nanotubes for Transparent Conducting Film. ACS Appl. Mater. & Inter. . 7:4616.
Chen, CH, Chen YF, Lan ZH, Chen LC, Chen KH, Jiang HX, Lin JY.  2004.  Mechanism of enhanced luminescence in InxAlyGa1–x–yN quaternary epilayers. Appl. Phys. Lett.. 84:1480-1482.
Chen, YC, Lin YG, Hsu YK, Yen SC, Chen KH, Chen LC.  2014.  Novel iron oxyhydroxide lepidocrocite nanosheet as ultrahigh power density anode material for asymmetric supercapacitors. Small . 10:3803–3810.
Chen, RS, Wang SW, Lan ZH, Tsai JTH, Wu CT, Chen LC, Chen* KH, Huang YS, Chen CC.  2008.  On-chip fabrication of well aligned and contact barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity. Small. 4:925-929.
Chen, KH, Chao CH, Chuang TJ.  1996.  GaN Growth by Nitrogen ECR-CVD Method. MRS Symp. . :Vol.423,377.
Chen, LC, Lu TR, Bhusari DM, Wu JJ, Chen KH, Kuo CT, Chen TM.  1998.  The Use of a Bio-molecular Target for Crystalline Carbon Nitride Film Deposition by Ar Ion-Beam Sputtering without Other Source of Nitrogen. Appl. Phys. Lett.. 72:3449.
Chen, J-C, Hsiao Y-R, Liu Y-C, Chen P-Y, Chen K-H.  2019.  Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure prepared by sol-gel process and acid doping level adjustment for high temperature PEMFC application, 2019. 182:121814. AbstractWebsite

Polybenzimidazoles containing heterocyclic benzo[c]cinnoline structure are synthesized from 3,8-benzo[c]cinnoline dicarboxylic acid, terephthalic acid and 3,3′-diaminobenzidine. Their membranes are prepared by sol-gel process, involving the conversion of polymer solution in polyphosphoric acid to phosphoric acid. The acid doping levels of the as-prepared membranes increase as the contents of benzo[c]cinnoline increase, indicating good interaction between phosphoric acid and benzo[c]cinnoline structure. The as-prepared membranes with high acid doping levels might lead to the dissolution of membranes in phosphoric acid at temperature higher than 120 °C. A new method is proposed to adjust acid doping levels by immersing the as-prepared membranes in diluted phosphoric acid solutions of various concentrations. The adjusted membranes (acid doping levels around 30 PA RU−1) exhibit enhanced mechanical properties with tensile strength in the range of 4.1–5.2 MPa. The proton conductivity of adjusted membranes maintain at 0.15–0.17 S cm−1 at 160 °C under ambient atmosphere without humidification. The single cells based on the adjusted membranes exhibit open circuit voltages and peak power densities from 0.89 to 0.91 V and 691–1253 mW cm−2 at 160 °C, respectively. Compared to other polybenzimidazole membranes prepared by sol-gel process, the adjusted polybenzimidazoles show higher mechanical strength and better single cell performance.