Y.-T. Chen's Group

Nanoscale Materials and Bioanalytical Chemistry Laboratory
奈米材料與生化分析實驗室

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Sn-Doping Enhanced Ultrahigh Mobility In1−xSnxSe Phototransistor

Citation:
C.R.P.Inbaraj, V. K. Gudelli, R. J. Mathew, R. K. Ulaganathan, R. Sankar, H. Y. Lin, H. - I. Lin, Y. - M. Liao, H. - Y. Cheng, K. - H. Lin, F. C. Chou, Y. - T. Chen, C. - H. Lee, G. - Y. Guo, and Y. - F. Chen. "Sn-Doping Enhanced Ultrahigh Mobility In1−xSnxSe Phototransistor." ACS Appl. Mater. Interfaces 11 (2019): 24269−24278.
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Recent Publications

  • Coupling between pyroelectricity and built-in electric field enabled highly sensitive infrared phototransistor based on InSe/WSe2/P(VDF-TrFE) heterostructure
  • In situ observation of photoelectrochemical water oxidation intermediates for selective biomass upgrading with simultaneous hydrogen production
  • An anti-ambipolar cryo-phototransistor
  • In Situ Spectroelectrochemical Detection of Oxygen Evolution Reaction Intermediates with a Carboxylated Graphene−MnO2 Electrocatalyst
  • Near-Infrared Electroluminescent Light-Emitting Transistors Based on CVD-Synthesized Ambipolar ReSe2 Nanosheets
  • ABi-Anti-AmbipolarFieldEffectTransistor
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  • SignificantElevationinPotassiumConcentrationSurrounding StimulatedExcitableCellsRevealedbyanAptamer-Modified NanowireTransistor
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