Nanoscale Materials and Bioanalytical Chemistry Laboratory
Intrinsic Electron Mobility Exceeding 10^3 cm^2/(V s) in Multilayer InSe FETs
- Citation:
- Sucharitakul, Sukrit, Nicholas J. Goble, Rajesh U. Kumar, Raman Sankar, Zachary A. Bogorad, F. - C. Chou, Y. - T. Chen, and Xuan P. A. Gao. "Intrinsic Electron Mobility Exceeding 10^3 cm^2/(V s) in Multilayer InSe FETs." Nano Letters 15 (2015): 3815-3819.
