<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">P. Chen</style></author><author><style face="normal" font="default" size="100%">Pai, Woei Wu</style></author><author><style face="normal" font="default" size="100%">Chan, Y. -H.</style></author><author><style face="normal" font="default" size="100%">Sun, W.-L.</style></author><author><style face="normal" font="default" size="100%">Xu, C.-Z.</style></author><author><style face="normal" font="default" size="100%">Lin, D.-S.</style></author><author><style face="normal" font="default" size="100%">Chou, M. Y.</style></author><author><style face="normal" font="default" size="100%">Fedorov, A. -V.</style></author><author><style face="normal" font="default" size="100%">Chiang, T. -C.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Large quantum-spin-Hall gap in single-layer 1T′ WSe2</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2018</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1038/s41467-018-04395-2</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">2003</style></pages><isbn><style face="normal" font="default" size="100%">2041-1723</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T′ structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T′ layer and an in-gap edge state located near the layer boundary. The system′s 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator–semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.&lt;/p&gt;
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